MMBD110T1 LRC | Alldatasheet

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LESHAN RADIO COMPANY, LTD. MMBD110. 330. 770T1–1/4 Schottky Barrier Diodes Schottky barrier diodes are designed primarily for high–efficiency UHF and VHF detector applications. Readily available to many other fast switching RF and digital applications. They are housed in the SOT–323/SC–70 package which is designed for low–power surface mount applications.  Extremely Low Minority Carrier Lifetime  Very Low Capacitance  Low Reverse Leakage  Available in 8 mm Tape and Reel DEVICE MARKING MMBD110T1 = 4M MMBD330T1 = 4T MMBD770T1 = 5H MAXIMUM RATINGS Rating Symbol Value Unit Reverse Voltage MMB D110T1 V R 7.0 Vdc MMBD330T1 30 MMBD770T1 70 Forward Power Dissipation P F 120 mW TA = 25°C Junction Temperature T J –55 to +125 °C Storage Temperature Range T stg –55 to +150 °C ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit Reverse Breakdown Voltage V (BR)R Volts (IR = 10 µA) MMBD110T1 7.0 10 — MMBD330T1 30 — — MMBD770T1 70 — — Diode Capacitance C T pF (VR = 0, f = 1.0 MHZ, Note 1) MMBD110T1 — 0.88 1.0 (VR = 15 Volts, f = 1.0 MHZ) MMBD330T1 — 0.9 1.5 (VR = 20 Volts, f = 1.0 MHZ) MMBD770T1 — 0.5 1.0 Reverse Leakage I R nAdc (VR = 3.0 V) MMBD110T1 — 20 250 (VR = 25 V) MMBD330T1 — 13 200 (VR = 35 V) MMBD770T1 — 9.0 200 Noise Figure NF dB (f = 1.0 GHz, Note 2) MMBD110T1 — 6.0 — Forward Voltage V F Vdc (IF = 10 mA) MMBD110T1 — 0.5 0.6 (IF= 1.0 mAdc) MMBD330T1 — 0.38 0.45 (IF = 1.0 mAdc) MMBD770T1 — 0.42 0.5 MMBD110T1 MMBD330T1 MMBD770T1 CASE 419–02, STYLE 2 SOT–323 /SC – 70