MMVL409T1 LRC | Alldatasheet
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LESHAN RADIO COMPANY, LTD. MMVL409T1–1/2 PLASTIC, CASE 477 SOD– 323 ANODE CATHODE MAXIMUM RATINGS Symbol Rating V alue Unit V R Continuous Reverse Voltage 20 Vdc IF Peak Forward Current 200 mAdc THERMAL CHARACTERISTICS Symbol Characteristic Max Unit PD Total Device Dissipation FR–5 Board,* 200 mW TA = 25°C Derate above 25°C 1.57 mW/°C RθJA Thermal Resistance Junction to Ambient 635 °C/W TJ, Tstg Junction and Storage T emperature 150 °C *FR–4 Minimum Pad ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit Reverse BreakdownVoltage V (BR)R 20 — — Vdc (IR = 10 µAdc) Reverse Voltage Leakage Current I R — — 0.1 µAdc (VR = 15 Vdc) Diode Capacitance T emperature Coefficient TC C — 300 — ppm/°C (VR = 3.0 Vdc, f = 1.0 MHz) C t, Diode Capacitance Q, Figure of Merit C R , Capacitance Ratio VR = 3.0 Vdc, f = 1.0 MHz V R = 3.0 Vdc C 3/C8 pF f = 50 MHz f = 1.0 MHz(1) Device Min Nom Max Min Min Max MMVL409T1 26 29 32 200 1.5 1.9 1. CR is the ratio of Ct measured at 3 Vdc divided by Ct measured at 8 Vdc. These devices are designed for general frequency control and tuning applications. They provide solid–state reliability in replacement of mechanical tuning methods. High Q with Guaranteed Minimum Values at VHF Frequencies Controlled and Uniform Tuning Ratio Surface Mount Package Device Marking: X5 MMVL409T1 VOLTAGE VARIABLE CAPACITANCE DIODE Silicon Tuning Diode
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MMVL409T1 SOD–323 3000 / Tape & Reel