MMVL3700T1 LRC | Alldatasheet
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LESHAN RADIO COMPANY, LTD. MMVL3700T1–1/2 PLASTIC, CASE 477 SOD– 323 ANODE CATHODE MAXIMUM RATINGS Symbol Rating V alue Unit V R Continuous Reverse Voltage 200 Vdc IF Peak Forward Current 20 mAdc THERMAL CHARACTERISTICS Symbol Characteristic Max Unit PD Total Device Dissipation FR–5 Board,* 200 mW TA = 25°C Derate above 25°C 1.57 mW/°C RθJA Thermal Resistance Junction to Ambient 635 °C/W TJ, Tstg Junction and Storage T emperature 150 °C *FR–4 Minimum Pad ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit Reverse BreakdownVoltage V (BR)R 200 — — Vdc (IR = 10 µAdc) Diode Capacitance C T — — 1.0 pF (VR = 20 Vdc, f = 1.0 MHz) Series Resistance R S — 0.7 1.0 Ω (IF = 10 mAdc) Reverse Leakage Current I R — — 0.1 µAdc (VR = 150 Vdc) Reverse Recovery Time t rr — 300 — ns (IF = IR = 10 mAdc) These devices are designed primarily for VHF band switching applications but are also suitable for use in general–purpose switching circuits. They are supplied in a cost–effective plastic surface mount package for economical, high–volume consumer and industrial requirements. Long Reverse Recovery Time trr = 300 ns (Typ) Rugged PIN Structure Coupled with Wirebond Construction for Optimum Reliability Low Series Resistance @ 100 MHz – R S = 0.7 Ω (Typ) @ IF = 10 mAdc Reverse Breakdown Voltage = 200 V (Min) Device Marking: 4R MMVL3700T1 SILICON PIN SWITCHING DIODE High Voltage Silicon Pin Diode
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MMVL3700T1 SOD–323 3000 / Tape & Reel