MMVL2101T1 LRC | Alldatasheet
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 2
Technical content
LESHAN RADIO COMPANY, LTD. MMVL2101T1–1/2 PLASTIC, CASE 477 SOD– 323 ANODE CATHODE MMVL2101T1
30 VOLTS
These devices are designed in the popular Plastic Surface Mount Package for high volume requirements of FM Radio and TV tuning and AFC, general frequency control and tuning applications.They provide solid–state reliability in replacement of mechanical tuning methods. High Q Controlled and Uniform Tuning Ratio Standard Capacitance Tolerance – 10% Complete Typical Design Curves Device Marking: 4G Silicon Tuning Diode MAXIMUM RATINGS Symbol Rating V alue Unit V R Continuous Reverse Voltage 30 Vdc IF Peak Forward Current 200 mAdc THERMAL CHARACTERISTICS Symbol Characteristic Max Unit PD Total Device Dissipation FR–5 Board,* 200 mW TA = 25°C Derate above 25°C 1.57 mW/°C RθJA Thermal Resistance Junction to Ambient 635 °C/W TJ, Tstg Junction and Storage Temperature 150 °C *FR–4 Minimum Pad ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit Reverse BreakdownVoltage V (BR)R 30 — — Vdc (IR = 10 µAdc) Reverse Voltage Leakage Current I R — — 0.1 µAdc (VR = 25 Vdc, TA = 25°C) Diode Capacitance Temperature Coefficient TC C — 280 — ppm/°C (VR = 4.0 Vdc, f = 1.0 MHz) C t, Diode Capacitance Q, Figure of Merit TR, Tuning Ratio VR = 4.0 Vdc, f = 1.0 MHz V R = 4.0 Vdc C 2/C30 pF f = 50 MHz f = 1.0 MHz Device Min Nom Max Min Min Max
ORDERING INFORMATION
MMVL2101T1 SOD–323 3000 / Tape & Reel PARAMETER TEST METHODS 1. CT, DIODE CAPACITANCE (CT = CC + CJ). CT is measured at 1.0 MHz using a capacitance bridge (Boonton Electronics Model 75A or equivalent). 2. TR, TUNING RATIO TR is the ratio of CT measured at 2.0 Vdc divided by CT measured at 30 Vdc. 3. Q, FIGURE OF MERIT Q is calculated by taking the G and C readings of an admittance bridge at the specified frequency and substituting in the following equations: Q =2πfC/G (Boonton Electronics Model 33AS8 or equivalent). Use Lead Length = 1/16”. 4. TC C , DIODE CAPACITANCE TEMPERA TURE COEFFICIENT TC C is guaranteed by comparing CT at VR = 4.0 Vdc, f = 1.0 MHz, TA = –65°C with CT at VR = 4.0 Vdc, f =
1.0 MHz, TA = +85°C in the following equation, which
defines TCC : TC C = C T(+85°C) – CT(–65°C) 106 85+65 C T(25°C) Accuracy limited by measurement of CT to ±0.1 pF.