MMPQ3906 CENTRAL | Alldatasheet

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DESCRIPTION: The CENTRAL SEMICONDUCTOR MMPQ3906, consisting of four transistors and available in the SOIC-16 surface mount package, is designed for general purpose amplifier and switching applications. MAXIMUM RATINGS: (TA=25°C) SYMBOL UNITS Collector-Base Voltage V CBO 40 V Collector-Emitter Voltage V CEO 40 V Emitter-Base Voltage V EBO 5.0 V Continuous Collector Current I C 200 mA Power Dissipation P D 1000 mW Operating and Storage Junction Temperature T J,Tstg -55 to +150 °C Thermal Resistance (Total Package) Θ JA 125 °C/W Thermal Resistance (Each Transistor) Θ JA 240 °C/W ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN TYP MAX UNITS ICEV VCE=30V, VEB=3.0V 50 nA BVCBO IC=10µA 40 V BVCEO IC=1.0mA 40 V BVEBO IE=10µA 5.0 V VCE(SAT) IC=10mA, IB=1.0mA 0.25 V VCE(SAT) IC=50mA, IB=5.0mA 0.40 V VBE(SAT) IC=10mA, IB=1.0mA 0.65 0.85 V VBE(SAT) IC=50mA, IB=5.0mA 0.95 V hFE VCE=1.0V, IC=0.1mA 60 hFE VCE=1.0V, IC=1.0mA 80 hFE VCE=1.0V, IC=10mA 100 300 hFE VCE=1.0V, IC=50mA 60 hFE VCE=1.0V, IC=100mA 30 fT VCE=20V, IC=10mA, f=100MHz 450 MHz Cib VEB=0.5V, f=100kHz 8.0 pF Cob VCB=5.0V, f=100kHz 3.0 pF NF V CE=5.0V, IC=100µA, RS=1.0kΩ , f=10Hz to 15.7kHz 2.5 dB td VCC=3.0V, VBE=0.5V, IC=10mA, IB1=1.0mA 15 ns tr VCC=3.0V, VBE=0.5V, IC=10mA, IB1=1.0mA 20 ns ts VCC=3.0V, IC=10mA, IB1= IB2=1.0mA 110 ns tf VCC=3.0V, IC=10mA, IB1= IB2=1.0mA 40 ns MMPQ3906 SURFACE MOUNT PNP SILICON QUAD TRANSISTOR SOIC-16 CASE Central Semiconductor Corp. TM R0 ( 7-November 2001)

Semiconductor Corp. TM SOIC-16 CASE - MECHANICAL OUTLINE MMPQ3906 SURFACE MOUNT PNP SILICON QUAD TRANSISTOR R0 ( 7-November 2001) PIN CONFIGURATION