MMPQ2222A CENTRAL | Alldatasheet
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DESCRIPTION: The CENTRAL SEMICONDUCTOR MMPQ2222A, consisting of four transistors and available in the SOIC-16 surface mount package, is designed for general purpose amplifier and switching applications. MAXIMUM RATINGS: (TA=25°C) SYMBOL UNITS Collector-Base Voltage V CBO 75 V Collector-Emitter Voltage V CEO 40 V Emitter-Base Voltage V EBO 6.0 V Continuous Collector Current I C 500 mA Power Dissipation P D 1000 mW Operating and Storage Junction Temperature T J,Tstg -55 to +150 °C Thermal Resistance (Total Package) Θ JA 125 °C/W Thermal Resistance (Each Transistor) Θ JA 240 °C/W ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN TYP MAX UNITS ICEV VCE=60V, VEB=3.0V 10 nA ICBO VCB=60V 10 nA ICBO VCB=60V, TA=125°C 10 µA IEBO VBE=3.0V 10 nA BVCBO IC=10µA 75 V BVCEO IC=10mA 40 V BVEBO IE=10µA 6.0 V VCE(SAT) IC=150mA, IB=15mA 0.3 V VCE(SAT) IC=500mA, IB=50mA 1.0 V VBE(SAT) IC=150mA, IB=15mA 0.6 1.2 V VBE(SAT) IC=500mA, IB=50mA 2.0 V hFE VCE=10V, IC=0.1mA 35 hFE VCE=10V, IC=1.0mA 50 hFE VCE=10V, IC=10mA 75 hFE VCE=10V, IC=10mA, TA=-55°C 35 hFE VCE=10V, IC=150mA 100 300 hFE VCE=1.0V, IC=150mA 50 hFE VCE=10V, IC=500mA 40 fT VCE=20V, IC=20mA, f=100MHz 300 MHz Cib VEB=0.5V, f=100kHz 20 pF Cob VCB=10V, f=100kHz 4.0 pF NF V CE=10V, IC=100µA, RS=1.0kΩ , f=1.0kHz 2.0 dB MMPQ2222A SURFACE MOUNT NPN SILICON QUAD TRANSISTOR SOIC-16 CASE Central Semiconductor Corp. TM R0 ( 7-November 2001)
Semiconductor Corp. TM SOIC-16 CASE - MECHANICAL OUTLINE MMPQ2222A SURFACE MOUNT NPN SILICON QUAD TRANSISTOR R0 ( 7-November 2001) ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN TYP MAX UNITS td VCC=30V, VBE(OFF)=0.5V, IC=150mA, IB1=15mA 8.0 ns tr VCC=30V, VBE(OFF)=0.5V, IC=150mA, IB1=15mA 20 ns ts VCC=30V, IC=150mA, IB1= IB2=15mA 180 ns tf VCC=30V, IC=150mA, IB1= IB2=15mA 40 ns PIN CONFIGURATION