MMFTN3018W DIOTEC | Alldatasheet

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N Silicon N-Channel MOS Field Effect Transistor Silizium N-Kanal MOS Feldeffekt-Transistor N Version 2011-01-28 Dimensions - Maße [mm] 1 = G 2 = S 3 = D Power dissipation – Verlustleistung 200 mW Plastic case Kunststoffgehäuse SOT-323 Weight approx. – Gewicht ca. 0.01 g Plastic material has UL classification 94V-0 Gehäusematerial UL94V-0 klassifiziert Standard packaging taped and reeled Standard Lieferform gegurtet auf Rolle Maximum ratings (TA = 25°C) Grenzwerte (TA = 25°C) MMFTN3018W Drain-Source-voltage – Drain-Source-Spannung G short VDSS 60 V Gate-Source-voltage Continuos – Gate-Source-Spannung VGSS ± 20 V Power dissipation – Verlustleistung Ptot 200 mW 1) Drain current continuos – Drainstrom (dc) ID 100 mA Peak Drain current – Drain-Spitzenstrom IDM 400 mA Junction temperature – Sperrschichttemperatur Storage temperature – Lagerungstemperatur Tj TS 150°C -55…+150°C

1 Device mounted on standard PCB material

Bauteil montiert auf Standard-Leiterplattenmaterial © Diotec Semiconductor AG http://www.diotec.com/ 1 1.3 0.3 1.25±0.1 1±0.1 2±0.1 2.1±0.1 Type Code

Characteristics (Tj = 25°C) Kennwerte (Tj = 25°C) Min. Typ. Max. Drain-Source breakdown voltage – Drain-Source-Durchbruchspannung ID = 10 µA V(BR)DSS 30 V Drain-Source leakage current – Drain-Source Leckstrom G short VDS = 30 V IDSS 1 µA Gate-Source leakage current – Gate-Source Leckstrom VGS = 20 V ±IGSS 1 µA Gate-Source threshold voltage – Gate-Source Schwellspannung VDS = 3 V, ID = 100 µA VGS(th) 0.8 V 1.5 V Drain-Source on-state resistance – Drain-Source Einschaltwiderstand VGS = 4 V, ID = 10 mA VGS = 2.5 V, ID = 1 mA RDS(on) RDS(on) 8 Ω 13 Ω Forward Transfer Admittance – Übertragungssteilheit VDS = 3 V, ID = 10 mA gFS 20 mS Input Capacitance – Eingangskapazität VDS = 5 V, f = 1 MHz Ciss 13 pF Output Capacitance – Ausgangskapazität VDS = 5 V, f = 1 MHz Coss 9 pF Reverse Transfer Capacitance – Rückwirkungskapazität VDS = 5 V, f = 1 MHz Crss 4 pF Thermal resistance junction to ambient air Wärmewiderstand Sperrschicht – umgebende Luft RthA < 625 K/W 1) Bauteil montiert auf Standard-Leiterplattenmaterial 2 http://www.diotec.com/ © Diotec Semiconductor AG