MMFTN170 DIOTEC | Alldatasheet
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N N-Channel Enhancement Mode Field Effect Transistor N-Kanal Feldeffekt Transistor – Anreicherungstyp N Version 2011-01-28 Dimensions - Maße [mm] 1 = G 2 = S 3 = D Power dissipation – Verlustleistung 300 mW Plastic case Kunststoffgehäuse SOT-23 (TO-236) Weight approx. – Gewicht ca. 0.01 g Plastic material has UL classification 94V-0 Gehäusematerial UL94V-0 klassifiziert Standard packaging taped and reeled Standard Lieferform gegurtet auf Rolle Maximum ratings (TA = 25°C) Grenzwerte (TA = 25°C) MMFTN170 Drain-Source-voltage – Drain-Source-Spannung G short VDSS 60 V Drain-Gate-voltage – Drain-Gate-Spannung RGS < 1 MΩ VDGR 60 V Gate-Source-voltage continuos Gate-Source-Spannung dauernd VGSS ± 20 V Power dissipation – Verlustleistung Ptot 300 mW Drain current continuos – Drainstrom (dc) ID 500 mA Peak Drain current – Drain-Spitzenstrom IDM 800 mA Junction temperature – Sperrschichttemperatur Storage temperature – Lagerungstemperatur Tj TS 150°C -55…+150°C © Diotec Semiconductor AG http://www.diotec.com/ 1 2.5 max 1.3±0.1 1.1 0.4 2.9 ±0.1 1 2 Type Code 1.9
Characteristics (Tj = 25°C) Kennwerte (Tj = 25°C) Min. Typ. Max. Drain-Source breakdown voltage – Drain-Source-Durchbruchspannung ID = 100 µA V(BR)DSS 60 V Drain-Source leakage current – Drain-Source Leckstrom G short VDS = 25 V IDSS 0.5 µA Gate-Body leakage current – Gate-Substrat Leckstrom VGS = 15 V IGSS 10 nA Gate-Source threshold voltage – Gate-Source Schwellspannung VGS = VDS, ID = 1 mA VGS(th) 0.8 V 3 V Drain-Source on-state resistance – Drain-Source Einschaltwiderstand VGS = 10 V, ID = 200 mA RDS(on) 5 Ω Forward Transconductance – Übertragungssteilheit VDS > 2 VDS(on), ID = 200 mA gFS 320 mS Input Capacitance – Eingangskapazität VDS = 10 V, f = 1 MHz Ciss 40 pF Output Capacitance – Ausgangskapazität VDS = 10 V, f = 1 MHz Coss 30 pF Reverse Transfer Capacitance – Rückwirkungskapazität VDS = 10 V, f = 1 MHz Crss 10 pF Turn-On Time – Einschaltzeit VDD = 25 V, ID = 500 mA, VGS = 10 V, RG = 50 Ω td(on) 10 ns Turn-Off Delay Time – Ausschaltverzögerung VDD = 25 V, ID = 500 mA, VGS = 10 V, RG = 50 Ω td(off) 10 ns 2 http://www.diotec.com/ © Diotec Semiconductor AG