MMFTN138 DIOTEC | Alldatasheet
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N N-Channel Logic Level Enhancement Mode Field Effect Transistor N-Kanal Logikpegel Feldeffekt-Transistor - Anreicherungstyp N Version 2011-01-24 Dimensions - Maße [mm] 1 = G 2 = S 3 = D Power dissipation – Verlustleistung 360 mW Plastic case Kunststoffgehäuse SOT-23 (TO-236) Weight approx. – Gewicht ca. 0.01 g Plastic material has UL classification 94V-0 Gehäusematerial UL94V-0 klassifiziert Standard packaging taped and reeled Standard Lieferform gegurtet auf Rolle Maximum ratings (TA = 25°C) Grenzwerte (TA = 25°C) MMFTN138 Drain-Source-voltage – Drain-Source-Spannung VDSS 50 V Drain-Gate-voltage (RGS < 20 KΩ ) Drain-Gate-Spannung VDGR 50 V Gate-Source-voltage Gate-Source-Spannung dc tP < 50 µs VGSS VGSS ± 20 V ± 40 V Power dissipation – Verlustleistung Ptot 360 mW Drain current continuos – Drainstrom (dc) ID 220 mA Peak Drain current – Drain-Spitzenstrom IDM 880 mA Junction temperature – Sperrschichttemperatur Storage temperature – Lagerungstemperatur Tj TS 150°C -55…+150°C © Diotec Semiconductor AG http://www.diotec.com/ 1 2.5 max 1.3±0.1 1.1 0.4 2.9 ±0.1 1 2 Type Code 1.9
Characteristics (Tj = 25°C) Kennwerte (Tj = 25°C) Min. Typ. Max. Drain-Source breakdown voltage – Drain-Source-Durchbruchspannung ID = 250 µA V(BR)DSS 50 V Drain-Source leakage current – Drain-Source-Leckstrom VDS = 50 V VDS = 30 V IDSS 500 nA 100 nA Gate-Source leakage current – Gate-Source-Leckstrom VGS = ± 20 V IGSS ± 100 nA Gate-Source threshold voltage – Gate-Source Schwellspannung VGS = VDS, ID = 1 mA VGS(th) 0.8 V 1.6 V Drain-Source on-state resistance – Drain-Source Einschaltwiderstand VGS = 10 V, ID = 220 mA VGS = 4.5 V, ID = 220 mA RDS(on) 3.5 Ω 6 Ω Forward Transconductance – Übertragungssteilheit VDS = 10 V, ID = 220 mA gFS 0.12 S Input Capacitance – Eingangskapazität VDS = 25 V, f = 1 MHz Ciss 60 pF Output Capacitance – Ausgangskapazität VDS = 25 V, f = 1 MHz Coss 25 pF Reverse Transfer Capacitance – Rückwirkungskapazität VDS = 25 V, f = 1 MHz Crss 10 pF Turn-On Delay Time – Einschaltverzögerung VDD = 30 V, ID = 290 mA, VGS = 10 V, RG = 50 Ω td(on) 8 ns Turn-On Rise Time – Anstiegszeit VDD = 30 V, ID = 290 mA, VGS = 10 V, RG = 50 Ω tr 12 ns Turn-Off Delay Time – Ausschaltverzögerung VDD = 30 V, ID = 290 mA, VGS = 10 V, RG = 50 Ω td(off) 16 ns Turn-Off Fall Time – Abfallzeit VDD = 30 V, ID = 290 mA, VGS = 10 V, RG = 50 Ω tf 22 ns Thermal resistance junction to ambient air Wärmewiderstand Sperrschicht – umgebende Luft RthA < 350 K/W Drain-Source Diode Maximum Ratings and Characteristics (Tj = 25°C) Grenz- und Kennwerte (Tj = 25°C) Min. Typ. Max. Maximum Continuos Source Current IS 220 mA Maximum Pulse Source Current ISM 880 mA Drain-Source Diode Forward Voltage IS = 440 mA VGD 1.4 V 2 http://www.diotec.com/ © Diotec Semiconductor AG