MMFTN123 DIOTEC | Alldatasheet
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 2
Technical content
N N-Channel Logic Level Enhancement Mode Field Effect Transistor N-Kanal Logikpegel Feldeffekt-Transistor – Anreicherungstyp N Version 2011-01-24 Dimensions - Maße [mm] 1 = G 2 = S 3 = D Power dissipation – Verlustleistung 360 mW Plastic case Kunststoffgehäuse SOT-23 (TO-236) Weight approx. – Gewicht ca. 0.01 g Plastic material has UL classification 94V-0 Gehäusematerial UL94V-0 klassifiziert Standard packaging taped and reeled Standard Lieferform gegurtet auf Rolle Maximum ratings (TA = 25°C) Grenzwerte (TA = 25°C) MMFTN123 Drain-Source-voltage – Drain-Source-Spannung VDS 100 V Gate-Source-voltage – Gate-Source-Spannung VGSS ± 20 V Power dissipation – Verlustleistung Ptot 360 mW 1) Drain current – Drainstrom (dc) ID 170 mA Peak Drain current – Drain-Spitzenstrom IDM 680 mA Junction temperature – Sperrschichttemperatur Storage temperature – Lagerungstemperatur Tj TS 150°C -55…+150°C
1 Device mounted on standard PCB material
Bauteil montiert auf Standard-Leiterplattenmaterial © Diotec Semiconductor AG http://www.diotec.com/ 1 2.5 max 1.3±0.1 1.1 0.4 2.9 ±0.1 1 2 Type Code 1.9
Characteristics (Tj = 25°C) Kennwerte (Tj = 25°C) Min. Typ. Max. Drain-Source breakdown voltage – Drain-Source-Durchbruchspannung ID = 250 µA V(BR)DSS 100 V Drain-Source leakage current – Drain-Source-Leckstrom VDS = 100 V VDS = 20 V IDSS 1 µA 10 nA Gate-Source leakage current – Gate-Source-Leckstrom VGS = ± 20 V IGSS ± 50 nA Gate-Source threshold voltage – Gate-Source Schwellspannung VGS = VDS, ID = 1 mA VGS(th) 0.8 V 2 V Drain-Source on-state resistance – Drain-Source Einschaltwiderstand VGS = 10 V, ID = 170 mA VGS = 4.5 V, ID = 170 mA RDS(on) RDS(on) 6 Ω 10 Ω Input Capacitance – Eingangskapazität VDS = 25 V, f = 1 MHz Ciss 73 pF Output Capacitance – Ausgangskapazität VDS = 10 V, f = 1 MHz Coss 7 pF Reverse Transfer Capacitance – Rückwirkungskapazität VDS = 10 V, f = 1 MHz Crss 3.4 pF Turn-On Delay Time – Einschaltverzögerung VDD = 30 V, ID = 280 mA, VGS = 10 V, RG = 6 Ω td(on) 3.4 ns Turn-On Rise Time – Anstiegszeit VDD = 30 V, ID = 280 mA, VGS = 10 V, RG = 6 Ω tr 18 ns Turn-Off Delay Time – Ausschaltverzögerung VDD = 30 V, ID = 280 mA, VGS = 10 V, RG = 6 Ω td(off) 31 ns Turn-Off Fall Time – Abfallzeit VDD = 30 V, ID = 280 mA, VGS = 10 V, RG = 6 Ω tf 5 ns Thermal resistance junction to ambient air Wärmewiderstand Sperrschicht – umgebende Luft RthA < 500 K/W 1) Bauteil montiert auf Standard-Leiterplattenmaterial 2 http://www.diotec.com/ © Diotec Semiconductor AG