MMDT3904 JIANGSU | Alldatasheet

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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-363 Plastic-Encapsulate Transistors MMDT3904

FEATURES

z Epitaxial planar die construction z Ideal for low power amplification and switching MARKING:K6N MAXIMUM RATINGS (T a =25℃ unless otherwise noted) Symbol Parameter Value Units V CBO Collector-Base Voltage 60 V V CEO Collector-Emitter Voltage 40 V V EBO Emitter-Base Voltage 5 V I C Collector Current -Continuous 0.2 A P C Collector Power Dissipation 0.2 W T J Junction Temperature 150 T stg Storage Temperature -55-150 ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) P a r a m e t e r Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V (BR)CBO I C =10μA,I E =0 60 V Collector-emitter breakdown voltage V (BR)CEO I C =1mA,I B =0 40 V Emitter-base breakdown voltage V (BR)EBO I E =10μA,I C =0 5 V Collector cut-off current I CBO V CB =30V,I E =0 0.05 μA Emitter cut-off current I EBO V EB =5V,I C =0 0.05 μA h FE(1) V CE =1V,I C =0.1mA 40 h FE(2) V CE =1V,I C =1mA 70 h FE(3) V CE =1V,I C =10mA 100 300 h FE(4) V CE =1V,I C =50mA 60 DC current gain h FE(5) V CE =1V,I C =100mA 30 V CE(sat)1 I C =10mA,I B =1mA 0.2 V Collector-emitter saturation voltage V CE(sat)2 I C =50mA,I B =5mA 0.3 V V BE(sat)1 I C =10mA,I B =1mA 0.65 0.85 V Base-emitter saturation voltage V BE(sat)2 I C =50mA,I B =5mA 0.95 V Transition frequency f T V CE =20V,I C =10mA,f=100MHz 300 MHz Collector output capacitance C ob V CB =5V,I E =0,f=1MHz 4 pF Noise figure NF V CE =5V,I c =0.1mA,f=1kHz,R S =1KΩ 5 dB Delay time t d 35 nS Rise time t r V CC =3V, V BE(off) =-0.5V I C =10mA , I =-I = 1mA 35 nS Storage time t s 200 nS Fall time t f V CC =3V, I C =10mA I =-I =1mA 50 nS Collector cut-off current I CEX V CE =30V,V BE(off) =3V 0.05 μA SOT-363 JC(T DUAL TRANSISTOR (NPN+NPN) www.cj-elec.com 1 A,Jun,2014www.cj-elec.com D,Mar,2016

0.1 1 10 100 100 150 200 250 300 0 25 50 75 100 125 150 100 200 300 0.1 1 10 100 0.2 0.4 0.6 0.8 1.0 11 0 1 0 0 100 200 300 400 0.1 100 200 V CE = 1V T a =100 o C T a =25 o C COLLECTOR CURRENT I C (mA) DC CURRENT GAIN h FE I C h FE COLLECTOR POWER DISSIPATION P c (mW) AMBIENT TEMPERATURE T a ( ) P c —— T a 200 COLLECTOR CURRENT I C (mA) BASE-EMITTER SATURATION VOLTAGE V BEsat (V) T a =25 T a =100 β=10 I C V BEsat 200 T a =25 T a =100 β=10 V CEsat —— I C COLLECTOR-EMITTER SATURATION VOLTAGE V CEsat (mV) COLLECTOR CURRENT I C (mA) COMMON EMITTER T a =25 70uA 63uA 56uA 49uA 42uA 35uA 28uA 21uA 14uA I B =7uA COLLECTOR-EMITTER VOLTAGE V CE (V) COLLECTOR CURRENT I C (mA) Static Characteristic 200 V CE =1V T a =25 T a =100 o C BASE-EMITTER VOLTAGE V BE (V) COLLECTOR CURRENT I C (mA) I C —— V BE Typical Characteristics www.cj-elec.com 2 A,Jun,2014www.cj-elec.com D,Mar,2016

SOT-363 Suggested Pad Layout www.cj-elec.com 3 A,Jun,2014www.cj-elec.com D,Mar,2016 Min Max Min Max A 0.900 1.100 0.035 0.043 A1 0.000 0.100 0.000 0.004 A2 0.900 1.000 0.035 0.039 b 0.150 0.350 0.006 0.014 c 0.100 0.150 0.004 0.006 D 2.000 2.200 0.079 0.087 E 1.150 1.350 0.045 0.053 E1 2.150 2.400 0.085 0.094 e e1 1.200 1.400 0.047 0.055 L L1 0.260 0.460 0.010 0.018 θ 0° 8° 0° 8° 0.525 REF 0.021 REF Symbol Dimensions In Millimeters Dimensions In Inches 0.650 TYP 0.026 TYP

www.cj-elec.com 4 A,Jun,2014www.cj-elec.com D,Mar,2016