MMDT3904-HF COMCHIP | Alldatasheet

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Comchip Technology CO., LTD. REV:A Page 1QW-JTR170 Mechanical data - Case: SOT-363 small outline plastic package. - Mounting position: Any. - Epoxy UL: 94V-0. - 1,4 : Emitter - 2,5 : Base - 3,6 : Collector E B C C B E 1 2 3 6 5 4 Circuit Diagram - Epitaxial planar die construction. - Ideal for low power amplification and switching. - High stability and high reliability. SymbolParameter Value Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current-continuous Collector power dissipation Junction temperature VCBO VCEO VEBO IC PC TJ Maximum Ratings (at TA=25°C unless otherwise noted) TSTGStorage temperature range Thermal resistance from junction to ambient RθJA Unit V V V mA mW °C/W Dimensions in inches and (millimeter) SOT-363 0.087(2.20) 0.079(2.00) 0.053(1.35) 0.045(1.15) 0.055(1.40) 0.047(1.20) 0.039(1.00) 0.035(0.90) 0.004(0.10) 0.000(0.00) 0.094(2.40) 0.085(2.15) 0.004(0.10) 0.006(0.15) 0.018(0.46) 0.010(0.26) 0.014(0.35) 0.006(0.15) 1 2 3 6 5 4 200 200 625 150 -55 to +150

Base-emitter saturation voltage Collector-emitter saturation voltage Transition frequency Delay time Storage time Rise time Fall time VCE = 1V, IC = 0.1mA VCE = 1V, IC = 1mA IC = 10mA, IB = 1mA IC = 10mA, IB = 1mA VCE = 20V, IC = 10mA, f = 100MHz VCC = 3V, VBE(off) = -0.5V IC = 10mA, IB1 = 1mA VCC = 3V, IC = 10mA IB1 = IB2 = 1mA hFE(1) hFE(2) VCE(sat)1 VBE(sat)1 fT td tr ts tf V V MHz nS nS nS nS VCE = 1V, IC = 10mA hFE(3) VCE = 1V, IC = 50mA hFE(4) VCE = 1V, IC = 100mA hFE(5) IC = 50mA, IB = 5mA VCE(sat)2 V IC = 50mA, IB = 5mA VBE(sat)2 V Collector output capacitance VCB = 5V, IE = 0, f = 1MHz Cob pF Noise figure NF dB SymbolParameter Conditions Min Max Unit Collector-base breakdown voltage IC = 10μA, IE = 0 Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current IC = 1mA, IB = 0 IE = 10μA, IC = 0 VCE = 30V, VEB(off) = 3V VEB = 5V, IC = 0 V(BR)CBO V(BR)CEO V(BR)EBO ICEX IEBO V V V nA nA Electrical Characteristics (at TA=25°C unless otherwise noted) Comchip Technology CO., LTD. Page 2 REV:A Note: Pulse width ≤ 300µs, duty cycle ≤ 2.0%. Dual Transistor QW-JTR170 Collector cut-off current ICBO nAVCB = 30V, IE = 0 100 300 0.20 0.30 0.850.65 0.95 300 200 VCE = 5V, IC = 0.1mA, f = 1KHz, RS = 1KΩ

Comchip Technology CO., LTD. Page 3 REV:A Typical Rating and Characteristic Curves (MMDT3904-HF) Dual Transistor QW-JTR170 0.1 1 10 100 200 100 200 300 Fig.2 - hFE ― IC Collector Current, IC (mA) DC Current Gain, hFE 0 1.0 1.5 3.0 4.0 Fig.1 - Static Characteristic Collector-Emitter Voltage, VCE (V) Collector Current, IC (mA) 3.5 150 250 Ta=100°C Ta=25°C VCE= 1V 0.5 2.0 2.5 Common emitter Ta=25°C IB=7µA 14µA 21µA 28µA 35µA 42µA 49µA 56µA 63µA 70µA 200 400 Fig.4 - VCEsat ― IC Collector-Emitter Saturation Voltage, VCEsat (mV) Collector Current, IC (mA) 1 10 100 200 0.2 0.4 0.8 1.0 Fig.3 - VBEsat ― IC Collector Current, IC (mA) Base-Emitter Saturation Voltag, VBEsat (V) 100 300 Ta=100°C Ta=25°C ꞵ=10 0.1 10 100 2001 0.6 ꞵ=10 Ta=100°C Ta=25°C 0 50 75 125 150 100 200 250 Fig.6 - PC ― Ta Ambient Temperature, Ta (°C) Collector Power Dissipation, PC (mW) 10025 150 200 Fig.5 - IC ― VBE Base-Emitter Voltage, VBE (V) Collector Current, IC (mA) 0.9 0.1 0.5 0.7 100 VCE= 1V Ta=100°C Ta=25°C

Comchip Technology CO., LTD. Page 4 REV:A Reel Taping Specification Components 100±2 Empty Pockets50±2 Empty Pockets Trailer Tape Leader Tape A B C d E F P P0 P1 W SOT-363 SYMBOL (mm) (inch) SYMBOL SOT-363 (mm) (inch) A D2B C Dd D1 − 0.000 E F P P0 P1 W W1 − 0.10 − 0.004 D2 DD1 120° Dual Transistor QW-JTR170

3,000 REEL ( pcs ) Reel Size (inch) REEL PACK SOT-363 Comchip Technology CO., LTD. Page 5 K6NPin 1 C D B A Suggested P.C.B. PAD Layout SIZE (inch) 0.016 (mm) 0.40 0.80 0.65 0.031 0.026 SOT-363 1.94 0.076 A B C D REV:A Dual Transistor QW-JTR170