MMDT2907A

MMDT2907A JIANGSU | Alldatasheet

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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-363 Plastic-Encapsulate Transistors MMDT2907A FEATURE Complementary NPN Type available MMDT2222A MAXIMUM RATINGS (T a =25℃ unless otherwise noted) Symbol Parameter Value Units V CBO Collector-Base Voltage -60 V V CEO Collector-Emitter Voltage -60 V V EBO Emitter-Base Voltage -5 V I C Collector Current -Continuous -600 mA P C Collector Power Dissipation 200 mW T J Junction Temperature 150 ℃ T stg Storage Temperature -55-150 ℃ MARKING: K2F ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Symbol Test conditions Min M ax U nit Collector-base breakdown voltage V (BR)CBO I C = -10 μ A, I E =0 -60 V Collector-emitter breakdown voltage V (BR)CEO I C = -10mA, I B =0 -60 V Emitter-base breakdown voltage V (BR)EBO I E =-10 μ A, I C =0 -5 V Collector cut-off current I CBO V CB =-50V, I E =0 -10 nA Collector cut-off current I CEX V CE =-30V,V EB(off) =-0.5V -50 nA Emitter cut-off current I EBO V EB =-5V, I C =0 -10 nA h FE(1) V CE =-10V, I C = -0.1mA 75 h FE(2) V CE =-10V, I C = -1mA 100 h FE(3) V CE =-10V, I C =-10mA 100 h FE(4) V CE =-10V, I C = -150mA 100 300 DC current gain h FE(5) V CE =-10V, I C =-500mA 50 V CE(sat)1 I C =-150mA, I B =-15mA -0.4 V Collector-emitter saturation voltage V CE(sat)2 I C =-500mA, I B =- 50mA -1.6 V V BE(sat)1 I C =-150mA, I B =-15mA -1.3 V Base-emitter saturation voltage V BE(sat)2 I C =-500mA, I B = -50mA -2.6 V Transition frequency f T V CE =-20V, I C = -50mA, 100MHz

200 MHz

C ob V CB =-10V, I E = 0, 1MHz 8 pF Input Capacitance C ib V EB =-2V, I C = 0, 1MHz 30 pF Delay time t d 10 ns Rise time t r V CC =-30V,I C =-150mA, I =-15mA 40 n s Storage time t s 225 ns Fall time t f V CC =-6V, I C =-150mA, I = I = -15mA 60 ns JC(T SOT-363 DUAL TRANSISTOR (PNP+PNP) www.cj-elec.com 1www.cj-elec.com E,Mar,2016 z

-0.1 -1 -10 100 -0.1 -1 -10 -100 100 200 300 400 500 -0.1 -10 -100 0 25 50 75 100 125 150 100 200 300 -1 -10 -100 -0.0 -0.3 -0.6 -0.9 -0.00 -0.05 -0.10 -0.15 -0.20 -0.25 -1 -10 -100 -0.0 -0.4 -0.8 -1.2 f=1MHz I E =0/ I C T a =25 -20 V CB / V EB C ob / C ib — — C ob C ib CAPACITANCE C (pF) REVERSE VOLTAGE V (V) COMMON EMITTER V CE =-10V -600 I C T a =25 T a =100 DC CURRENT GAIN h FE COLLECTOR CURRENT I C (mA) V BE I C — — COMMON EMITTER V CE =-10V -600 T a =100 T a =25 COLLECTOR CURRENT I C (mA) BASE-EMMITER VOLTAGE V BE (V) P c — — T a COLLECTOR POWER DISSIPATION P c (mW) AMBIENT TEMPERATURE T a ( ) h FE — — -600 β=10 T a =100 T a =25 I C V CEsat — — COLLECTOR-EMITTER SATURATION VOLTAGE V CEsat (V) COLLECTOR CURRENT I C (mA) Static Characteristic -800uA -720uA -640uA -560uA -480uA -400uA -320uA -240uA -160uA I B =-80uA COMMON EMITTER T a =25 COLLECTOR CURRENT I C (A) COLLECTOR-EMITTER VOLTAGE V CE (V) -600 β=10 I C V BEsat — — T a =100 T a =25 BASE-EMITTER SATURATION VOLTAGE V BEsat (V) COLLECTOR CURRENT I C (mA) www.cj-elec.com 2www.cj-elec.com E,Mar,2016 Typical Characteristics

SOT-363 Suggested Pad Layout www.cj-elec.com 3www.cj-elec.com E,Mar,2016 Min Max Min Max A 0.900 1.100 0.035 0.043 A1 0.000 0.100 0.000 0.004 A2 0.900 1.000 0.035 0.039 b 0.150 0.350 0.006 0.014 c 0.100 0.150 0.004 0.006 D 2.000 2.200 0.079 0.087 E 1.150 1.350 0.045 0.053 E1 2.150 2.400 0.085 0.094 e e1 1.200 1.400 0.047 0.055 L L1 0.260 0.460 0.010 0.018 θ 0° 8° 0° 8° 0.525 REF 0.021 REF Symbol Dimensions In Millimeters Dimensions In Inches 0.650 TYP 0.026 TYP

www.cj-elec.com 4www.cj-elec.com E,Mar,2016