MMDT2227-HF

MMDT2227-HF COMCHIP | Alldatasheet

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• Epoxy meets UL-94 V-0 flammability rating. - Surface mount package ideally suited for automatic insertion. Circuit Diagram B1 E1 E2 B2 B :Base E :Emitter C :Collector 1 2 3 6 5 4 Mechanical data - Case: SOT-363, molded plastic. - Terminals: Tin plated leads, solderable per J-STD-002 and JESD22-B102. - Mounting position: Any. Maximum Ratings (Ta=25°C unless otherwise noted) Collector-base voltage Unit SymbolParameter VCBO V Collector-emitter voltage VCEO V Emitter-base voltage Collector current-continuous VEBO IC PC V mA 200Collector power dissipation -600 mW Storage temperature range TSTG -55 to +150 °C Junction temperature 150 °C 600 TJ NPN @IC = 10µA, IE = 0 Conditions PNP @IC = -10µA, IE = 0 75-60 NPNPNP NPN @IC = 10mA, IB = 0 PNP @IC = -10mA, IB = 0 NPN @IE = 10µA, IC = 0 PNP @IE = -10µA, IC = 0 40-60 6-5

Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Emitter cut-off current Unit SymbolParameter Min. VCBO VCEO VEBO IEBO -60 -60 -10 V V V nA Test Conditions IC = -10μA, IE = 0 IC = -10mA, IB = 0 IE = -10μA, IC = 0 VEB = -5V, IC = 0 Max. Comchip Technology CO., LTD. Collector cut-off current ICBO -10 nAVCB = -50V, IE = 0 Typ. VCE(sat) V IC = -150mA , IB = -15mACollector-emitter saturation voltage DC current gain hFE VCE = -10V, IC = -0.1mA 75 IC = -500mA , IB = -50mA 225 Base-emitter saturation voltage VBE(sat) IC = -500mA, IB = -50mA IC = -150mA, IB = -15mA -0.4 -1.6 V 100 300 -1.3 VCE = -10V, IC = -1mA -2.6 Page 2 REV:A QW-JTR197 Collector cut-off current ICEX -50 nA VCE = -10V, IC = -10mA VCE = -10V, IC = -150mA VCE = -10V, IC = -500mA 100 100 Transition frequency fT MHZ200VCE = -20V, IC = -50mA, f = 100MHZ Delay time Rise time Storage time Fall time ns ns td tr ts tf VCE = -30V, VEB(off) = -0.5V VCC = -30V, IC = -150mA IB1 = -15mA VCC = -6V, IC = -150mA IB1 = -IB2 = -15mA Small Signal Transistor

Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Emitter cut-off current Unit SymbolParameter Min. VCBO VCEO VEBO IEBO V V V nA Test Conditions IC = 10μA, IE = 0 IC = 10mA, IB = 0 IE = 10μA, IC = 0 VEB = 3V, IC = 0 Max. Comchip Technology CO., LTD. Collector cut-off current ICBO 10 nAVCB = 60V, IE = 0 Typ. VCE(sat) V IC = 150mA , IB = 15mACollector-emitter saturation voltage DC current gain hFE VCE = 10V, IC = 0.1mA 35 IC = 500mA , IB = 50mA 225 Base-emitter saturation voltage VBE(sat) IC = 500mA, IB = 50mA IC = 150mA, IB = 15mA 0.3 V 300 1.2 VCE = 10V, IC = 1mA Page 3 REV:A QW-JTR197 Collector cut-off current ICEX Base cut-off current IBL 10 nA 20 nA VCE = 10V, IC = 10mA VCE = 10V, IC = 150mA VCE = 1V, IC = 150mA VCE = 10V, IC = 500mA 100 Transition frequency fT MHZ300VCE = 20V, IC = 20mA, f = 100MHZ Delay time Rise time Storage time Fall time ns ns td tr ts tf VCE = 60V, VEB(off) = 3V VCE = 60V, VEB(off) = 3V VCC = 30V, IC = 150mA IB1 = 15mA, VEB(off) = -0.5V VCC = 30V, IC = 150mA IB1 = -IB2 = 5mA Small Signal Transistor

TR1 (PNP) Typical Rating and Characteristic Curves (MMDT2227-HF) Comchip Technology CO., LTD. Page 4 REV:A QW-JTR197 Fig.1 - Static Characteristic Collect-Emitter Voltage, -VCE (V) DC Current, hFE 400 Fig.2 - DC Current Gain 200 0.1 10 600 Collector Current, -IC, (mA) 500 1001 100 1000 4 60 2 8 10 12 Collector Current, -IC (mA) 300 100 ID= -0.3mA -0.6mA -0.9mA -1.2mA -1.5mA -1.8mA -2.1mA -2.4mA -2.7mA -3mATa=25°C VCE= -10V Ta=-25°C Ta=25°C Ta=100°C Ta=125°C Fig.3 - Collector-Emitter Saturation Voltage Collector-Emitter Voltage, -VCE(sat) (V) Fig.4 - Base-Emitter Saturation Voltage Base-Emitter Voltage, -VBE(sat), (V) 0.1 Collector Current, -IC, (mA) 0.1 10 6001001 0.1 0.01 Ta=-25°C Ta=25°C Ta=100°CTa=125°C IC:IB=10:1 Collector Current, -IC, (mA) 0.1 10 6001001 Ta=-25°C Ta=25°C Ta=100°C Ta=125°C IC:IB=10:1 Fig.5 - Base-Emitter on Voltage Fig.6 - Cob/Cib ― VCB/VEB Capacitance, C, (pF) 1 10 100 Collector Current, -IC, (mA) Base-Emitter Voltage, -VBE (V) Reverse Voltage, -VR (V) 600 0.1 100 Ta=-25°CTa=25°C Ta=100°CTa=125°C VCE= -10V fT=1MHz Ta=25°C Cib Cob Small Signal Transistor

TR2 (NPN) Typical Rating and Characteristic Curves (MMDT2227-HF) Comchip Technology CO., LTD. Page 5 REV:A QW-JTR197 Fig.7 - Static Characteristic Collect-Emitter Voltage, VCE (V) DC Current, hFE 400 Fig.8 - DC Current Gain 200 0.1 10 600 Collector Current, IC, (mA) 500 1001 100 1000 4 60 2 8 10 12 Collector Current, IC (mA) 300 100 ID= 0.3mA 0.6mA 0.9mA 1.2mA 1.5mA 1.8mA 2.1mA 2.4mA 2.7mA 3mA Ta=25°C VCE= 10V Ta=-25°C Ta=25°C Ta=100°C Ta=125°C Fig.9 - Collector-Emitter Saturation Voltage Collector-Emitter Voltage, VCE(sat) (V) Fig.10 - Base-Emitter Saturation Voltage Base-Emitter Voltage, VBE(sat), (V) 0.1 Collector Current, IC, (mA) 0.1 10 6001001 0.1 0.01 Ta=25°C Ta=100°C IC:IB=10:1 0.1 10 6001001 IC:IB=10:1 Fig.11 - Base-Emitter on Voltage Fig.12 - Cob/Cib ― VCB/VEB Capacitance, C, (pF) 1 10 100 Collector Current, IC, (mA) Base-Emitter Voltage, VBE (V) Reverse Voltage, VR (V) 600 0.1 100 VCE= 10V fT=1MHz Ta=25°C Cib Cob Collector Current, IC, (mA) Ta=-25°C Ta=25°C Ta=100°CTa=125°C Ta=-25°C Ta=25°C Ta=100°C Ta=125°C Ta=-25°C Ta=125°C Small Signal Transistor

Comchip Technology CO., LTD. Page 6 REV:A QW-JTR197 Reel Taping Specification SYMBOL SOT-363 SOT-363 SYMBOL (mm) (mm) (inch) (inch) A D2B C Dd D1 E F P P0 P1 W W1 8.00 + 0.20 − 0.10 0.315 + 0.008 − 0.004 D2 DD1 120° T 0.20 ± 0.03 0.008 ± 0.001 A B C d E F P P0 P1 W T Trailer Device Leader 400mm (min)160mm (min) Direction of Feed Small Signal Transistor

Comchip Technology CO., LTD. Page 7 REV:A QW-JTR197 Marking Code Part Number Marking Code Standard Packaging Case Type 3,000 REEL ( pcs ) Reel Size (inch) REEL PACK SOT-363 K27Pin 1 K27MMDT2227-HF Suggested P.C.B. PAD Layout SIZE (inch) 0.016 (mm) 0.40 0.80 0.65 0.031 0.026 SOT-363 1.94 0.076 A B C D D A B C Small Signal Transistor