MMBT2222 SAMSUNG | Alldatasheet
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| SAMSUNG SEMICONDUCTOR INC 14E D | 7442 OOO7253 4 i T+19-17 MMBT2222 NPN EPITAXIAL SILICON TRANSISTOR TY : GENERAL PURPOSE TRANSISTOR worn, i | ABSOLUTE MAXIMUM RATINGS (T,=25°C) i Collector-Base Voltage Vee 60 v | Collector-Emitter Voltage Veeo 30 v . ! Emitter-Bese Voltage Veso 6 v Collector Current ” le 600 mA oe Collector Dissipation Po 350 mw . ‘Storage Temperature Tstg 150 °c ELECTRICAL CHARACTERISTICS (T,=25°C) 1 Bese 2. Enter 3. Cotectr ee ee . Collector-Base Breakdown Voltage | BVcoo | b= 10yA, le=O 60 v . Collector-Emitter Breakdown Voltage | BVceo c= 10mA, la=O oo 30 vo. Emitter-Base Breakdown Voltage BV exo lem 10pA, =O 5 v . Collector Cutoff Current lex Vece=60V, Vee=3V 10 nA Collector Cutoff Current leo Vea™50V, le=O 0.01 pA DC Current Gain ee Vee=10V, c=0.1mA 36 | Vee=10V, lo=1.0mA _ 50 | Vee=10V, b= 10mA 76 *Vee=10V, c= 150mA 100 300 | *Vee=10V, b= 500mA 30 *Collector-Emitter Saturation Voltage | Vce (sat) | ‘c= 150mA, ls=15mA 0.4 Vv ic=500mA, lp=60mA 1.6 v '* Base-Emitter. Saturation Voltage Vee (Sat) | b= 150mA, l= 15mA 1.3 v ks=500mA, ls=50mA 2.6 v Current Gain-Bandwidth Product ty Ie=20mA, Vce=20V 260 MHz f=100MHz Output Capacitance Cob Veg=10V, le=O 8.0 pF _ | f=1.0MHz Tum On Time -- ton Voc=30V, Vece=0.5V 35 ns js'c= 150MA, Igy =15MA Tum Off Time tot Voc=30V, k=150mA 285 ns ~ tar=lao™ 15MA “Pulse test: Pulse Width<300ys, Duty Cycle<2% i” Marking . fe FA : A A : . & SAMSUNG SEMICONDUCTOR 623 i
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