MMBT2222 HDSEMI | Alldatasheet

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H igh Diode Semiconductor SOT- 23 Symbol Parameter Value Unit V Collector-Base Voltage 75 V VCEO Collector-Emitter Voltage 30 V VEBO Emitter-Base Voltage 6 V IC Collector Current 600 mA PC Collector Power Dissipation 250 mW RΘJA Thermal Resistance From Junction To Ambient 500 ℃/W Tj Junction Temperature 150 ℃ Tstg Storage Temperature -55～+150 ℃ CLASSIFICATION OF h FE Electrical Characteristics (Ta=25℃ Unless otherwise specified） SOT-23 Plastic-Encapsulate Transistors TRANSISTOR( NP N ) EB C MMBT2222 CBO Genernal Purpose Amplifier Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V(BR)CBO IC=10µA, IE=0 75 V Collector-emitter breakdown voltage V(BR)CEO IC=10mA, IB=0 30 V Emitter-base breakdown voltage V(BR)EBO IE=10µA, IC=0 6 V Collector cut-off current ICBO VCB=60V, IE=0 10 nA Collector cut-off current ICEX VCE=30V, VBE(off)=3V 10 nA Emitter cut-off current IEBO VEB=3V, IC=0 0.1 µA hFE(1)* VCE=10V, IC=150mA 100 300 hFE(2)* VCE=10V, IC=0.1mA 40 DC current gain hFE(3)* VCE=10V, IC=500mA 42 Collector-emitter saturation voltage VCE(sat)1* IC=500mA, IB=50mA 1 V Collector-emitter saturation voltage VCE(sat)2* IC=150mA, IB=15mA 0.3 V Base-emitter saturation voltage VBE(sat)* IC=500mA, IB=50mA 1.2 V Transition frequency fT VCE=20V,IC=20mA, f=100MHz 300 MHz Delay time td 10 ns Rise time tr VCC=30V, VBE(off)=-0.5V IC=150mA, IB1=15mA 25 ns Storage time ts 225 ns Fall time tf VCC=30V, IC=150mA, IB1= IB2=15mA 60 ns *Pulse test: pulse width ≤300μs, duty cycle≤ 2.0%. RANK L H RANGE 100–200 200–300 MARKING M1B

H igh Diode Semiconductor Typical Characteristics 0.1 1 10 100 0.1 1 10 100 100 200 300 400 500 0.1 100 0 25 50 75 100 125 150 100 200 300 400 1 10 100 0.0 0.1 0.2 0.3 0.4 0.5 02468 1 0 1 2 0.00 0.05 0.10 0.15 0.20 0.25 1 10 100 0.0 0.4 0.8 1.2 f=1MHz I E =0/ I C T a =25 V CB / V EB C ob / C ib C ob C ib CAPACITANCE C (pF) REVERSE VOLTAGE V (V) COMMON EMITTER V CE =10V 600 I C T a =25 T a =100 DC CURRENT GAIN h FE COLLECTOR CURRENT I C (mA) 100 V BE I C COMMON EMITTER V CE =10V 600 T a =100 T a =25 COLLECTOR CURRENT I C (mA) BASE-EMMITER VOLTAGE V BE (V) P c —— T a COLLECTOR POWER DISSIPATION Pc (mW) AMBIENT TEMPERATURE Ta ( ) h FE 600 β=10 T a =100 T a =25 I C V CEsat COLLECTOR-EMITTER SATURATION VOLTAGE V CEsat (V) COLLECTOR CURRENT I C (mA) Static Characteristic 1mA 0.9mA 0.8mA 0.7mA 0.6mA 0.5mA 0.4mA 0.3mA 0.2mA I B =0.1mA COMMON EMITTER T a =25 COLLECTOR CURRENT I C (A) COLLECTOR-EMITTER VOLTAGE V CE (V) 600 β=10 I C V BEsat T a =100 T a =25 BASE-EMITTER SATURATION VOLTAGE V BEsat (V) COLLECTOR CURRENT I C (mA) 500 I C f T COMMON EMITTER V CE =20V f=200MHz Ta=25 TRANSTION FREQUENCY f T (MHz) COLLECTOR CURRENT I C (mA)

H igh Diode Semiconductor Package Outline Dimensions SOT-23 Suggested Pad Layout SOT-23

Reel Taping Specifications For Surface Mount Devices-SOT-23 H igh Diode Semiconductor