MMBD452 BILIN | Alldatasheet
Document overview
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Technical content
Dual Hot-Carrier Diodes MMBD452 C 1 3 9 w w w . g m i c r o e l e c . c o m R e v . A 1
FEATURES
z Very low capacitance. z Extremely low minority carrier lifetime. z Low reverse leakage. z Power dissipation P d=225mW.
APPLICATIONS
z Designed primarily for UHF and VHF detector SOT-23 applications.
ORDERING INFORMATION
Type No. Marking Package Code MMBD452 5N SOT-23 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Parameter Symbol Limits Unit Continuous reverse voltage VR 30 V Power Dissipation Pd 225 mW Operating junction temperature range TJ -55 to +125 ℃ Junction and storage temperature TSTG -55 to +150 ℃ ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified Parameter Symbol Min. Typ. Max. Unit Conditions Reverse Breakdown Voltage V (BR) 30 V I R=10μA Forward voltage V F 0.38 0.52 0.45 0.6 V IF=1.0mA IF=10mA Reverse current I R 13 200 nA V R=25V Total Capacitanc C T 0.9 1.5 pF V R=15V,f=1MHz Pb Lead-free
Dual Hot-Carrier Diodes MMBD452 C 1 3 9 w w w . g m i c r o e l e c . c o m R e v . A 2 TYPICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
Dual Hot-Carrier Diodes MMBD452 C 1 3 9 w w w . g m i c r o e l e c . c o m R e v . A 3 PACKAGE OUTLINE Plastic surface mounted package SOT-23 SOLDERING FOOTPRINT Unit : mm
PACKAGE INFORMATION
MMBD452 SOT-23 3000/Tape&Reel SOT-23 Dim Min Max A 2.70 3.10 B 1.10 1.50 C 1.0 Typical D 0.4 Typical E 0.35 0.48 G 1.80 2.00 H 0.02 0.1 J 0.1 Typical K 2.20 2.60 All Dimensions in mm A B C D E J H K G 0.90 0.80 2.00 0.95 0.95