MMBD352WT1 LRC | Alldatasheet
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LESHAN RADIO COMPANY, LTD. MMBD352WT1–1/2 Dual Schottky Barrier Diode MAXIMUM RATINGS Rating Symbol Value Unit Continuous Reverse Voltage VR 7.0 V CC THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Total Device Dissipation FR– 5 Board(1) PD 200 mW TA = 25°C Derate above 25° 1.6 mW/°C Thermal Resistance, Junction to Ambient RθJA 625 °C/W Total Device Dissipation PD 300 mW Alumina Substrate(2) TA = 25°C Derate above 25°C 2.4 mW/°C Thermal Resistance, Junction to Ambient RθJA 417 °C/W Junction and Storage Temperature T J, Tstg –55 to +150 °C DEVICE MARKING MMBD352WT1 = M5 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Forward Voltage V F — 0.60 V (IF = 10 mAdc) Reverse Voltage Leakage Current I R µA (VR = 7.0 V) — 10 Capacitance C — 1.0 pF (VR = 0 V, f = 1.0 MHz) These devices are designed primarily for UHF mixer applications but are suitable also for use in detector and ultra–fast switching circuits. Very Low Capacitance — Less Than 1.0 pF @ Zero Volts Low Forward Voltage — 0.5 Volts (Typ) @ IF = 10 mA MMBD352WT1 CASE 419–02 , STYLE 9 SOT–323 / SC – 70 CATHODE CATHODE/ANODE ANODE