MMBD2837LT1 LRC | Alldatasheet
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LESHAN RADIO COMPANY, LTD. G21–1/2 CASE 318–08, STYLE 9 SOT– 23 (TO–236AB) MMBD2837LT1 MMBD2838LT1 MAXIMUM RATINGS(EACH DIODE) Rating Symbol V alue Unit Peak Reverse Voltage V RM 75 Vdc D.C Reverse Voltage MMBD2837LT1 V R 30 Vdc MMBD2838LT1 50 Peak Forward Current I FM 450 mAdc 300 Average Rectified Current I O 150 mAdc 100 THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Total Device Dissipation FR– 5 Board (1) P D 225 mW T A = 25°C Derate above 25°C 1.8 mW/°C Thermal Resistance, Junction to Ambient R θ JA 556 °C/W Total Device Dissipation P D 300 mW Alumina Substrate, (2) T A = 25°C Derate above 25°C 2.4 mW/°C Thermal Resistance, Junction to Ambient R θ JA 417 °C/W Junction and Storage Temperature T J , T stg –55 to +150 °C DEVICE MARKING MMBD2837LT1 = A5; MMBD2838LT1 = MA6 ELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted) ( EACH DIODE ) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Reverse Breakdown Voltage(I (BR) = 100µAdc) MMBD2837LT1 V (BR) 35 — Vdc MMBD2838LT1 75 — Reverse Voltage Leakage Current I R — µAdc (V R = 30 Vdc) MMBD2837LT1 — 0.1 (V R = 50 Vdc) MMBD2838LT1 0.1 Diode Capacitance C T — 4.0 pF(V R = 0 V, f = 1.0 MHz) Forward Voltage(I F = 10 mAdc) V F — 1.0 Vdc (I F = 50 mAdc) — 1.0 (I F = 100 mAdc) — 1.2 Reverse Recovery Time(I F=I R =10mAdc,I R(REC) =1.0mAdc)(Figure 1)t rr — 4.0 ns Monolithic Dual Switching Diodes CATHODE ANODE ANODE