MMBD2835LT1 LRC | Alldatasheet
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 2
Technical content
LESHAN RADIO COMPANY, LTD. G20–1/2 CASE 318–08, STYLE 12 SOT– 23 (TO–236AB) MMBD2835LT1 MMBD2836LT1 MAXIMUM RATINGS Rating Symbol V alue Unit Reverse Voltage MMBD2835LT1 V R 35 Vdc MMBD2836LT1 75 Forward Current I F 100 mAdc THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Total Device Dissipation FR– 5 Board (1) P D 225 mW T A = 25°C Derate above 25°C 1.8 mW/°C Thermal Resistance, Junction to Ambient R θ JA 556 °C/W Total Device Dissipation P D 300 mW Alumina Substrate, (2) T A = 25°C Derate above 25°C 2.4 mW/°C Thermal Resistance, Junction to Ambient R θ JA 417 °C/W Junction and Storage Temperature T J , T stg –55 to +150 °C DEVICE MARKING MMBD2835LT1 = A3X;MMBD2836LT1=A2X ELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted)( EACH DIODE ) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Reverse Breakdown Voltage(I R = 100 µAdc) MMBD2835LT1 V (BR) 35 — Vdc MMBD2836LT1 75 — Reverse Voltage Leakage Current I R nAdc (V R = 30 Vdc) MMBD2835LT1 — 100 (V R = 50 Vdc) MMBD2836LT1 — 100 Diode Capacitance C T — 4.0 pF(V R = 0, f = 1.0 MHz) Forward Voltage(I F = 10 mAdc) V F — 1.0 Vdc (I F = 50 mAdc) — 1.0 (I F = 100 mAdc) — 1.2 Reverse Recovery Time(I F = I R = 10 mAdc, I R(REC)= 1.0mAdc) (Figure 1) t rr — 4.0 ns Monolithic Dual Switching Diodes CATHODE CATHODE