DATASHEET SEARCH SITE | WWW.ALLDATASHEET.COM
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 2
Technical content
SOT-23 Plastic-Encapsulate Diodes SWITCHING DIODE
FEATURES
MMBD2004S type is a silicon switching dual in series diode manufactured by the epitaxial planar process, designed for applications requiring high voltage capability. Power dissipation MARKING : B6D Maximum Ratings @Ta=25℃ Parameter Symbol Limit Unit Non-Repetitive Peak Reverse Voltage VRM 300 V DC Blocking Voltage VR 240 V Peak Repetitive Current IO 200 mA Continuous Forward Current IF 225 mA Peak Repetitive Forward Current IFRM 625 mA Forward Surge Current t=1μs I FSM 4.0 A Forward Surge Current t=1s IFSM 1.0 A Power Dissipation Pd 250 mW Junction Temperature T J 150 ℃ Storage Temperature Range TSTG -55~+150 ℃ ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) P a r a m e t e r S y m b o l T e s t c o n d i t i o n s Min Max Unit Reverse breakdown voltage V (BR) I R= 100μA 240 V Reverse voltage leakage current I R V R=240V 0.1 μA Forward voltage V F I F=100mA 1 V Diode capacitance CD V R=0V f=1MHz 5 pF Reveres recovery time trr I F=IR=30mA,RL=100Ω 50 ns SOT-23 MMBD46 2012-1 WILLAS ELECTRONIC CORP. Preliminary
Dimensions in inches and (millimeters) SOT-23 Rev.D .080(2.04) .070(1.78) .110(2.80) .083(2.10) .006(0.15)MIN. .008(0.20) .003(0.08) .055(1.40) .035(0.89) .020(0.50) .012(0.30) .004(0.10)MAX. .122(3.10) .106(2.70) .063(1.60) .047(1.20) 2012-1 WILLAS ELECTRONIC CORP. SOT-23 Plastic-Encapsulate Diodes MMBD46 Preliminary