MMBD101LT1 LRC | Alldatasheet
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LESHAN RADIO COMPANY, LTD. G15–1/2 MAXIMUM RATINGS MBD101 MMBD101LT1 Rating symbol value unit Reverse Voltage v R 7.0 Volts Forward Power Dissipation p F @TA=25 °C 280 225 mW Derate above 25 °C 2.2 1.8 mW/ °C Junction Temperature T J +150 °C Storage Temperature Range T stg –55 to +150 °C DEVICE MARKING MMBD101LT1=4M ELECTRICAL CHARACTERISTICS(T A =25 °C unless otherwise noted) Characteristic Symbol Min Typ Max Unit Reverse Breakdown Voltage V (BR)R 7.0 10 — Volts (IR = 10µAdc) Diode Capacitance C T — 0.88 1.0 pF (VR = 0,f =1.0MHz,Note1) Forward Voltage(1) V F — 0.5 0.6 Volts (I F= 10mAdc) Reverse Leakage I R — 0.02 0.25 µ Adc (VR = 3.0Vdc) NOTE: MMBD101LT1 is also available in bulk packaging.Use MMBD101L as the device title to order this device in bulk. CASE 318–08, STYLE 6 SOT– 23 (TO–236AB) MMBD101LT1 Schottky Barrier Diodes SILICON SCHOTTKY BARRIER DIODES CATHODE ANODE Designed primarily for UHF mixer applications but suitable also for use in detector and ultra-fast switching circuits.Supplied in an inexpensive plastic package for low-cost,high-volume consumer requirements.Also available in Surface Mount package.
- Low Noise Figure—6.0dB Typ@1.0GHz Very Low Capacitance—Less Than 1.0pF@zero Volts High Forward Conductance—0.5volts(typ)@IF=10mA