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Dated : 22/01/2016 Rev:01 ® SEMTECH ELECTRONICS LTD. MMBCR100-8 Silicon Controlled Rectifiers Reverse Blocking Triode Thyristors Absolute Maximum Ratings (TJ = 25℃ unless otherwise noted) Parameter Symbol Value Unit Peak Repetitive Reverse Blocking Voltage 1) a t TJ = 25 to 125℃, RGK = 1 KΩ VRRM 600 V Peak Repetitive Forward Blocking Voltage 1) a t TJ = 25 to 125℃, RGK = 1 KΩ VDRM 600 V Forward Current RMS (All Conduction Angles) I T(RMS) 0.8 A Peak Forward Surge Current (1/2 Cycle, Sine Wave, 60 Hz) ITSM 10 A Circuit Fusing Considerations (t = 8.3 ms) I 2t 0.415 A 2s Forward Peak Gate Power (P W ≤ 1 µs) P GM 0.1 W Forward Average Gate Power P GF(AV) 0.01 W Forward Peak Gate Current (P W ≤ 1 µs) I GFM 1 A Reverse Peak Gate Voltage (P W ≤ 1 µs) V GRM 5 V Operating Junction Temperature Range at Rated V RRM and VDRM Tj - 40 to + 125 C Storage Temperature Range T stg - 40 to + 150 C VDRM and VRRM for types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; however, positive gate voltage shall not be applied concurrent with negative potential on the anode. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the device are exceeded. Characteristics at Ta = 25℃, RGK = 1 KΩ unless otherwise noted. Parameter Symbol Min. Max. Unit Peak Reverse Blocking Current a t VAK = Rated VDRM or VRRM IRRM - 10 µA Peak Forward Blocking Current a t VAK = Rated VDRM or VRRM IDRM - 10 µA Peak Forward On-State Voltage a t ITM = 1 A Peak VTM - 1.7 V Gate Trigger Current (Continuous dc) 1) at Anode Voltage = 7 Vdc, R L=100 Ω IGT - 200 µA Gate Trigger Voltage (Continuous dc) at Anode Voltage = 7 Vdc, RL = 100 Ω at Anode Voltage = Rated VDRM, RL = 100 Ω VGT - 0.8 V H o l d i n g C u r r e n t at Anode Voltage = 7 Vdc, initiating current = 20 mA IH - 5 mA 1 ) RGK current is not included in measurement. 1. Cathode 2. Gate 3. Anode TO-236 Plastic Package K G A K G