MMBC1626L6 SAMSUNG | Alldatasheet
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SAMSUNG SEMICONDUCTOR INC 2HE O | 7964142 OOOresSO 3 | MMBC1623L6 NPN EPITAXIAL SILICON TRANSISTOR T= -19 AMPLIFIER TRANSISTOR sor-23 ABSOLUTE MAXIMUM RATINGS (T,=25°C) . . Characteristic Unit B Collector-Base Voltage Vce0, 50 v | a: S| Collector-Emitter Voltage Veed 40 v | & PEE Emitter-Base Voltage Veo 5.0 v , 1 pe Collector Current ke 100 mA ~~ | Collector Dissipation Pe 350 mw Storage Temperature Tstg 150 °c * Refer to MMBC1623L3 for graphs . . ‘1, Base 2. Emitter 3. Collector ELECTRICAL CHARACTERISTICS (T,=25°C) | Coliector Cutolt Curent teao Vea=40V, le=0 100 nA 1 Emitter Cutoff Current leso Vea=5V. lo=0 400 A } DC Current Gain | hee Vce=6V, lo=1.0mA | 200 400 | Colector-Emitter Saturation Voltage | Vce (sat) } le= 100MA, l= 10mA 03 v ; Base-Emitter Saturation Voltage Voe (sat) | lc=100mA, Ip=10mA | 1.0 Vv | Base-Emitter On Voltage Vee (on) Ie=1,0mA, Vce=6V_ | 0.6 07 Vv ! Current Gain-Bandwidth Product fr Vce=6V, le=10mA | 200 MHz i | | t=100MHz | : : Morking A : J = CI Cc See & SAMSUNG SEMICONDUCTOR 620