MMBC1623L7 SAMSUNG | Alldatasheet
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SAMSUNG SEMICONDUCTOR INC ue D PJ 7bur¥2 ooovesa s Bf MMBC1623L7 NPN EPITAXIAL SILICON TRANSISTOR a < AMPLIFIER TRANSISTOR ; To sor-2a ABSOLUTE MAXIMUM RATINGS (T,=25°C) . . | Characteristic [_symbot | Rating | Unit : j Collector-Base Voltage Veeo 50 v : Collector-Emitter Voltage Veco 40 v 1 | Emitter-Base Voltage Veoo 5.0 v ' 1 Collector Current ke 100 mA > ‘. : | Collector Dissipation Po 350 mw | Storage Temperature Tsto 150 °c ‘+ Refer to MMBC1623L3 for graphs 1 1, Base 2, Emiter 3. Cokector : ELECTRICAL CHARACTERISTICS (T,=25°C) | 4 B aie Tom] sone [ae [oe oa I | Collector Cutoff Current leo | Vea=40V. e=0 100 na | Emitter Cutoff Current eso | Ves SV, o=0 100 nA _ | OC Current Gain bee | Vce=6V, fo=1.0mA | 300 | 600 i Collector-Emitter Saturation Voltage | Vce (sat) ; c= 100mA, [b= 10mA { o3 | v | * Base-Emittor Saturation Voltage | Vee (sat) le=100MA, le=10mA | P40 tov + Base-Emitter On Voltage | Vae (on) , be=1.0MA. Ver=6V 06 : O7 | v | j Current Gain-Bandwidth Product ttt j Voe=6V. le= 10mA 200} | MHz 1 | t=100Mez Marking Fy N J J : am I i i i | & SAMSUNG SEMICONDUCTOR 521