MMBC1623L4 SAMSUNG | Alldatasheet
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~ - ree a a + ~ SAMSUNG SEMICONDUCTOR INC LYE O | 294b4be goo7e4s $ I MMBC1623L4 NPN EPITAXIAL SILICON TRANSISTOR T= 29-19 AMPLIFIER TRANSISTOR . . - SOT-23 : ABSOLUTE MAXIMUM RATINGS (T.=25°C) : ~ | | Collector-Base Voltage Veeo 60 v H Collector-Emitter Voltage Vero 40 v i Emitter-Base Voltage Vevo. 5.0 Vv . Collector Current le 100 mA “ Collector Dissipation Pe 350 mw : | Storage Temperature Tstg 150 °c . __# Refer to MMBC162313 for graphs . ‘1, Base 2. Emitter 3. Collector ; ELECTRICAL CHARACTERISTICS (Ta =25°C) { Collector Cutoff Current lev0 Vco=40V, le=0 100 nA
1 Emitter Cutoff Current eso Ves=5V, Ie=O 100 nA |
! DC Current Gain Dre Vce=6V, Ic=1.0mA 90 | 180 i } Collector-Emitter Saturation Voltage | Vce (sat) | lo=100mA, lo= 10mA 0.3 v | * Base-Emitter Saturation Voltage Voe (sat) | l= 100MA, lp=10mA 1.0 Vv 1 | Base-Emitter On Voltage Vor (on) | =1.0mA, Vce=6V 0.6 0.7 v § Current Gain-Bandwidth Product fr Vee=6V, le=10mA 200 MHz | . . ; 7 1=100MHz | Marking gq : = J ry EF EJ . i eB sausunc SEMICONDUCTOR ~ . 518