MMBC1622D6 SAMSUNG | Alldatasheet
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SAMSUNG SEMICONOUCTOR INC LYE D Pi eseunu2 ooozeu2 4 bres : MMBC1622D6 NPN EPITAXIAL SILICON TRANSISTOR | AMPLIFIER TRANSISTOR sors‘ . ' ABSOLUTE MAXIMUM RATINGS (T.=25°C) . Collector-Base Voltage Vos 40 hv 1G, Pas = sas | Coltector-Emitter Voltage Vero 35 v ' G4 Emitter-Base Voltage Ves0 5.0 v J | Collector Current ke 100 mA . | | Collector Dissipation Pe 350 mw | Storage Temperature Tstg | 150 °C i ELECTRICAL CHARACTERISTICS (T.=25°C) ‘se Ears: cone | Collector Cutoff Current eso [ Veo=25V, k=” 60 nA i | Emitter Cutoff Current loo | Vea =8V, o=O 50 nA } OC Current Gain Dee ! Vee=3V, lo=0.1mA 150 : i | Vee=3V, le=0.5mA 200 400 | Collector-Emitter Saturation Voltage + Vce (Sat) c= 100mA, l= 10mA | 0.3 v + Base-Emitter On Voltage 1 Vpe (on) j le 0.5MA, Voe=3V | 055 | 06s 1 oY i | Current Gain-Bandwidth Product jfr > | Voe=6V. le=1.0mA i too |. i MHz j | i | f= 1002 | . . Marking gy [pe | : ~ | i & SAMSUNG SEMICONDUCTOR 512
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