MMBC1009F1 SAMSUNG | Alldatasheet
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SAMSUNG SEMICONDUCTOR INC 14€ 0 [J 75G4142 ooo7237 o ff aie s = 3) 0/9 MMBC1009F1 NPN EPITAXIAL SILICON TRANSISTOR! | AM/FM RF AMPLIFIER TRANSISTOR soras i ABSOLUTE-MAXIMUM RATINGS (T,=25°C) ~ i Collector-Base Voltage Voso 60 v } Collector-Emitter Voltage Veco 25 v 6 . H Emitter-Base Voltage Vee0 5 v . | Collector Current fe 60 mA ? Collector Dissipation Po 350 mw | : Storage Temperature Tstg 150 °C . | : ELECTRICAL CHARACTERISTICS (T,=25°C) __ hae Entra: conc | ; Characteristic [ symbot | Test Condition | Condition [| min | ve | [ox | unit | | Collector Cutoff Current leno, Veo=18V, le=0 100 | nA x ' DC Current Gain hee Vee=3V, lo=0.5mA 60 i ; - | Collector-Emitter Saturation Voltage | Vor (sat) | Ic==10mA, lo=1.0mA o3 | v ' j Current Gain-Bandwidth Product fr l= 1mA, Voe=6V MHz : : f=100MHz | Output ‘Capacitance Cob Veo=6V, le=0 oF f=1MHz Noise Figure NF c= 0.5mA, Vee=6V a8 f=1MHz,Rg=5000 H Marking | . = = } Cc Cc | | | | & SAMSUNG SEMICONDUCTOR . sor.