MMBA811C5 SAMSUNG | Alldatasheet
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SAMSUNG SEMICONDUCTOR INC 14E O J 2544342 ooOz228 Tt ff MMBA811C5 PNP EPITAXIAL SILICON TRANSISTOR : . - AF~ 1H ; DRIVER TRANSISTOR 7 . i sorza | ABSOLUTE MAXIMUM RATINGS (T,=25°C) . . | [_—craactite | symbot | rating _| ni Loree Collector-Base Voltage v 50 v Pe, Collector-Emitter Voltage Veco 45 v (PEELS Emitter-Base Voltage Veoo 5 v ' 1g; aa Collector Current le 60 mA . Collector Dissipation Po 350 mw : Storage Temperature Tstg 150 °c . H © Refer to MMBT5086 for graphs . . ; 1. eas 2 Enter, Cotte i ELECTRICAL CHARACTERISTICS (Ta=25°C) - [erect | Symbot | test conan | win [tne | unt | Collector-Base Breakdown Voltage BV cso, Ic=100pA, =O 50 Vv Collector-Emitter Breakdown Voltage | BVcro Ic=1.0mA, ls=0 45 Vv Emitter-Base Breakdown Voltage BVeso le=10pA, k=O 5 v Collector Cutoff Current leao Vea=40V, le=O 60 nA Emitter Cutoff Current leno Ves=5.0V, Ic=O 60 nA DC Current Gain Dee Vee=3V, Ice=0.1mA 150 Vee=3V, le=0.5MA 135 270 Collector-Emitter Saturation Voltage Vee (Sat) | Ie 20mA, Ip=2.0mA 0.3 v Current Gain-Bandwidth Product fr lc=1.0mA, Vee=6.0V 75 MHz t=100MHz Marking & SAMSUNG SEMICONDUCTOR , 408