MMB3904LT1 LRC | Alldatasheet
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LESHAN RADIO COMPANY, LTD. O11–1/6 MMBT3904LT1 EMITTER COLLECTOR BASE CASE 318–08, STYLE 6 SOT–23 (TO–236AB) General Purpose Transistor NPN Silicon MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage V CEO 40 Vdc Collector–Base Voltage V CBO 60 Vdc Emitter–Base Voltage V EBO 6.0 Vdc Collector Current — Continuous I C 200 mAdc THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Total Device Dissipation FR– 5 Board, (1) P D 225 mW TA = 25°C Derate above 25°C 1.8 mW/°C Thermal Resistance, Junction to Ambient R θJA 556 °C/W Total Device Dissipation P D 300 mW Alumina Substrate, (2) TA = 25°C Derate above 25°C 2.4 mW/°C Thermal Resistance, Junction to Ambient R θJA 417 °C/W Junction and Storage Temperature T J , Tstg –55 to +150 °C DEVICE MARKING MMBT3904LT1 = 1AM ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector–Emitter Breakdown Voltage(3) V (BR)CEO 40 — Vdc (I C = 1.0 mAdc, I B = 0) Collector–Base Breakdown Voltage V (BR)CBO 60 — Vdc (I C = 10 µAdc, I E = 0) Emitter–Base Breakdown Voltage V (BR)EBO 6.0 — Vdc (I E = 10 µAdc, I C = 0) Base Cutoff Current I BL — 50 nAdc ( V CE = 30 Vdc, V EB = 3.0 Vdc, ) Collector Cutoff Current I CEX — 50 nAdc ( V CE = 30Vdc, I EB = 3.0Vdc ) 3. Pulse Test: Pulse Width <300 µs, Duty Cycle <2.0%.
LESHAN RADIO COMPANY, LTD. O11–2/6 MMBT3904LT1 ELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted) (Continued) Characteristic Symbol Min Max Unit ON CHARACTERISTICS (3) DC Current Gain(1) h FE –– (I C =0.1 mAdc, V CE =1.0 Vdc) 40 –– (I C = 1.0 mAdc, V CE = 1.0 Vdc) 70 –– (I C = 10 mAdc, V CE = 1.0 Vdc) 100 300 (I C = 50mAdc, V CE = 1.0Vdc) 60 –– (I C = 100mAdc, V CE =1.0 Vdc) 30 –– Collector–Emitter Saturation Voltage V CE(sat) Vdc (I C = 10 mAdc, I B = 1.0 mAdc)(3) –– 0.2 (I C = 50 mAdc, I B = 5.0mAdc) –– 0.3 Base–Emitter Saturation Voltage(3) V BE(sat) Vdc (I C = 10 mAdc, I B = 1.0mAdc) 0.65 0.85 (I C = 50mAdc, I B = 5.0mAdc ) –– 0.95 SMALL–SIGNAL CHARACTERISTICS Current–Gain — Bandwidth Product f T 300 –– MHz(I C = 10mAdc, V CE = 20Vdc, f = 100MHz) Output Capacitance CB = 5.0Vdc, I E = 0, f = 1.0 MHz) C obo –– 4.0 pF Input Capacitance C ibo –– 8.0 pF(V EB = 0.5Vdc, I C = 0, f = 1.0 MHz) Input Impedancen h ie 1.0 10 pF(V CE = 10Vdc, I C = 1.0mAdc, f = 1.0 kHz) Voltage Feedback Ratio h re 0.5 8.0 X10 –4 (V CE = 10 Vdc, I C = 1.0 mAdc, f = 1.0 kHz) Small–Signal Current Gain h fe 100 400 —(V CE = 10 Vdc, I C = 1.0 mAdc, f = 1.0 kHz) Output Admittance h oe 1.0 40 θmhos(V CE = 10 Vdc, I C = 1.0 mAdc, f = 1.0 kHz) Noise Figure NF — 5.0 dB (V CE = 5.0 Vdc, I C = 100µAdc, R S = 1.0 k Ω , f = 1.0 kHz) SWITCHING CHARACTERISTICS Delay Time (V CC = 3.0 Vdc,V BE = –0.5Vdc t d —3 5 nsRise Time I C = 10 mAdc, I B1 = 1.0mAdc) t r —3 5 Storage Time (V CC = 3.0Vdc, t s — 200 Fall Time I C = 10 mAdc,I B1 = I B2 = 10 mAdc) t f —5 0 ns 3. Pulse Test: Pulse Width <300 µs, Duty Cycle <2.0%.