MM8006 NJSEMI | Alldatasheet
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\\Pioaacti,, One. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 MM8006 (SILICON) MM8007 NPN SILICON RF SMALL-SIGNAL TRANSISTORS . . . designed primarily for use in high-gain, low-noise, small-signal amplifiers in military and industrial equipment. Suitable for use in video wideband and general high-frequency amplifier applications of 50 to 1000MHz.
- Low Noise Figure - NF = 2.2dB (Typ) @ f = 200 MHz - MM8006
- High Power Gain - Gpe = 25 dB (Typ) @ f = 200 MHz - MM8006
- High Current-Gain-Bandwidth Product - fy = 1000 MHz (Min) @ IQ = 5.0 mAdc MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Baw Voltage Emitter-Ban Voltage Collector Current - Continuous Total Device Dissipation @TA = 25°C derate above 25°C Operating and Storage Junction Temperature Range Symbol Value Unit VCEO 10 Vdc VCB 15 Vdc VEB 3.0 vdc 1C 20 mAdc PD 200 mw 1.14 mW/°C Tj,T5tg -65 to '200 °C NPN SILICON RF SMALL-SIGNAL TRANSISTORS , 0.209 -i n» r rt.nft D'A W--| L DB 0500 / MIN as^ 0,050 -H — — j ^ 0.100 Ihnl. EoiittH 0-100 ) /hr"\\. 6ut 1 O.OSO r *\\. Colkcw j 1 Viy; y 4. cm 1.110 as 5^T «»'« 0,045 ^-VV-Olij CASE 20(10) TO-72 PACKAGE Quality Semi-Conductors
MM8006, MM8007 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic I Syi mbol Typ Unit OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage |IC" 1.0 mAdc. IB-O) Collector-Bass Breakdown Voltage (IC = 0.01 mAdc, IE = 0) Emitter-Base Breakdown Voltage (IE -0.01 mAdc, lc"0) Collector Cutoff Current (VCB - 6.0 Vdc, IE - 0) BVCEO BVcBO BVgBO 'CBO IS 3.0 1.0 Vdc Vdc Vdc nAdc ON CHARACTERISTICS DC Current Gain »C- 1 0 mAdc, VCE = 6,0 Vdc) "FE DYNAMIC CHARACTERISTICS Current-Gain—Bandwidth Product (IC = 5.0 mAdc, VCE = 6.0 Vdc. f= 100 MHz) Collector-Base Capacitance (VCE = 6.0 Vdc, IE - 0. f = 0.1 MHz) Collector-Ban Time Constant (IC- 10 mAdc, VCE - 6.0 Vdc. f- 31. 8 MHz) Noise Figure (1C • LOmAdc, VCE =6.0 Vdc, f = 60 MHz) MM8006 MM8007 ( I c - 1 -0 mAdc, VCE = 6.0 Vdc' f - 200 MHz) MM80O6 MM8007 t( 1 C - 1 .0 mAdc, VCE •= 6.0 Vdc, f « 450 MHz) MM8006 MM8007 fj Ccb i-b'Cc NF 1000 1.1 5.0 1.5 1.9 2.2 2.7 3500 1.5 3.8 5.0 MHz pF Pi dB FUNCTIONAL TEST tComrnon-Emitter Amplifier Power Gain dc = 1.0 mAdc, VCE " 6-° vdc. * ' 60 MHz) Both Typei (lc = 1 .0 mAdc, VCE ' 6.0 Vdc, f • 200 MHz) MM8OO6 MM8007 (IC - 1.0 mAdc, VCE -6.0 v<*c. * - -»50 MHz) MM8006 MM8007 Gpe dB rTunsd for minimum noiM.