MM4148SM CYSTEKEC | Alldatasheet

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CYStech Electronics Corp. Spec. No. : C329SM Issued Date : 2003.04.09 Revised Date : Page No. : 1/3 MM4148SM CYStek Product Specification SURFACE MOUNT SWITCHING DIODE MM4148SM

Description

The MM4148SM is designed for high-speed switching application in hybrid thick-and thin-film circuits. Absolute Maximum Ratings ( Operating temperature range applies unless otherwise specified ) Characteristics Symbol Value Unit Reverse Voltage V R 75 V Peak Reverse Voltage V RM 100 V Rectified Current(Average) Half Wave Rectification with Resistive Load at Tamb=25°C and f ≥ 50Hz IO 150 mA Surge Forward Current at t<1s and Tj=25°C IFSM 500 mA Power Dissipation at Tamb=25°C Ptot 500 mW Junction Temperature Tj 200 °C Storage Temperature Range Ts -65 to +200 °C Characteristics ( Tj=25°C) Characteristics Symbol Min Typ Max Unit Forward V oltage at IF=10mA V F - - 1 V VR=20V - - 25 nA VR =75V - - 5 uA Leakage Current VR =20V , Tj=150°C IR - - 50 uA Reverse Breakdown V oltage tested with 100us Pulses V (BR)R 100 - - V Capacitance at VF= VR =0 C tot - - 4 pF V oltage Rise when Switching On Tested with 50mA Forward Pulses Tp=0.1us, Rise Time<30ns, fp=5~100kHz Vfr - - 2.5 V Reverse Recovery Time From IF=-IR=10mA to IRR=-1mA, VR=6V , RL=100Ω trr - - 4 ns Thermal Resistance, Junction to Ambient Air R th JA - - 350 ℃/W Rectification Efficiency at f=100MHz, VRF=2V ηv 0.45 - - -

CYStech Electronics Corp. Spec. No. : C329SM Issued Date : 2003.04.09 Revised Date : Page No. : 2/3 MM4148SM CYStek Product Specification Characteristic Curves Admissible Repetitive Peak Forward Current vs Pulse Duration 0.1 Pulse Duration---tp(s) Peak Forward Current---IFRM(A) ν =0 ν =0.5 ν =.0.1 ν =0.2 Forward Current vs Forward Voltage 0.01 0.1 100 1000 Forward Voltage---VF(V) Forward Current---IF(mA) Tj=25℃ Tj=100℃ Dynamic Forward Resistance vs Forward Current 100 1000 10000 0.01 0.1 1 10 100 Forward Current---IF(mA) Dynamic Resistance---Rf(Ω) Tj= 25℃ f=1kHz Admissible Power Dissipation vs Ambient Temperature 100 200 300 400 500 600 0 50 100 150 200 250 Ambient Temperature---TA(℃ ) Amissible power dissipation-- Ptot(mW) Relative Capacitance vs Reverse Voltage 0.8 0.85 0.9 0.95 1.05 1.1 02468 1 0 Reverse Voltage---VR(V) Relative Capacitance--- Ctot(VR)/Ctot(0V) Tj=25℃ f=1kHz T t I t IFRM ν=tp/T

CYStech Electronics Corp. Spec. No. : C329SM Issued Date : 2003.04.09 Revised Date : Page No. : 3/3 MM4148SM CYStek Product Specification Mini-melf(SOD-80C) Dimension *:Typical Notes : 1.Controlling dimension : millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Important Notice:

  • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
  • CYStek reserves the right to make changes to its products without notice.
  • CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
  • CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. A B C D Cathode Mark LL-34 Mini-Melf SOD-80C CYStek package code:SM