M65609E ATMEL | Alldatasheet
Document overview
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Technical content
Features
Operating Voltage: 3.3V Access Time: 40 ns Very Low Power Consumption – Active: 180 mW (Max) – Standby: 70 µW (Typ) Wide Temperature Range: -55 °C to +125°C 400 Mils Width Package TTL Compatible Inputs and Outputs Asynchronous D e s i g n e do n0 . 3 5M i c r o nP r o c e s s Latch-up Immune 200 Krads capability SEU LET Better Than 3 MeV
Description
The M65609E is a very low power CMOS static RAM organized as 131,072 x 8 bits. Atmel brings the solution to applications where fast computing is as mandatory as low consumption, such as aerospace electronics, portable instruments, or embarked systems. Utilizing an array of six transistors (6T) memory cells, the M65609E combines an extremely low standby supply current (Typical value = 20 µA) with a fast access time at 40 ns over the full military temperature range. The high stability of the 6T cell pro- vides excellent protection against soft errors due to noise. The M65609E is processed according to the methods of the latest revision of the MIL STD 883 (class B or S), ESA SCC 9000 or QML. It is produced on the same process as the MH1RT sea of gates series. Rad. Hard 128K x 8 3.3-volt Very Low Power CMOS SRAM M65609E
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4158D–AERO–06/02 Block Diagram Pin Configuration 32 pins Flatpack 400 MILS Pin Description Table 1. Pin Names Name Description A0 - A16 Address Inputs I/O1 - I/O8 Data Input/Output CS
1 Chip Select 1
Table 2. Truth Table Note: L = low, H = high, X = H or L, Z = high impedance.
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4158D–AERO–06/02
Electrical Characteristics
Recommended DC Operating Conditions Capacitance Note: 1. Guaranteed but not tested. (MIL STD 883D Method 3015.3) *NOTE: Stresses greater than those listed under Absolute Max- imum Ratings may cause permanent damage to the device. This is a stress rating only and functional oper- ation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability. Operating Voltage Operating Temperature 3.3V + 0.3V -55 °Ct o+1 2 5°C Parameter Description Min Typ Max Unit VCC Supply voltage 3 3.3 3.6 V Gnd Ground 0.0 0.0 0.0 V VIL Input low voltage GND - 0.3 0.0 0.8 V VIH Input high voltage 2.2 – VCC +0 . 3 V Parameter Description Min Typ Max Unit CIN (1) Input low voltage – – 8 pF COUT (1) Output high voltage – – 8 pF
4158D–AERO–06/02 DC Parameters DC Test Conditions Consumption Parameter Description Minimum Typical Maximum Unit IIX (1) 1 . G n d<V i n< VCC, Gnd < Vout < VCC Output Disabled. Input leakage current -1 – 1 µA IOZ (1) Output leakage current -1 – 1 µA VOL (2) 2. VCC m i n .I O L=1m A . Output low voltage - – 0.4 V VOH (3) 3. VCC min. IOH = -0.5 mA. Output high voltage 2.4 – – V Symbol Description 65609E-40 Unit Value ICCSB (1) Standby supply current 2.5 mA max ICCSB1 (2) Standby supply current 1.5 mA max ICCOP (3) Dynamic operating current 50 mA max 1. CS 1 > VIH or CS2 < VIL and CS1 < VIL. 2. CS 1 > VCC -0 . 3 Vo r ,C S2 < Gnd + 0.3V and CS1 < 0.2V 3 . F=1 / T AVAV,I OUT =0m A ,W =O E =V I H ,V i n=G n do rVCC, VCC max.
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4158D–AERO–06/02 Write Cycle Note: 1. Parameters guaranteed, not tested, with 5 pF output loading (see Section “AC Test Conditions” Figure 2). Read Cycle Note: 1. Parameters guaranteed, not tested, with 5 pF output loading (seeSection “AC Test Conditions” Figure 2). Symbol Parameter 65609E-40 Unit Value tAVAW Write cycle time 35 ns min tAVWL Address set-up time 0 ns min tAVWH Address valid to end of write 28 ns min tDVWH Data set-up time 28 ns min tE1LWH CS1 low to write end 28 ns min tE2HWH CS2 high to write end 28 ns min tWLQZ Write low to high Z (1) 15 ns max tWLWH Write pulse width 28 ns min tWHAX Address hold from to end of write +3 ns min tWHDX Data hold time 0 ns min tWHQX W r i t eh i g ht ol o wZ(1) 0n sm i n Symbol Parameter 65609E-40 Unit Value tAVAV Read cycle time 40 ns min tAVQV Address access time 40 ns max tAVQX Address valid to low Z 3 ns min tE1LQV Chip-select1 access time 40 ns max tE1LQX CS1 low to low Z (1) 3n s m i n tE1HQZ CS1 high to high Z (1) 15 ns max tE2HQV Chip-select2 access time 40 ns max tE2HQX CS2 high to low Z (1) 3n s m i n tE2LQZ CS2 low to high Z (1) 15 ns max tGLQV Output Enable access time 12 ns max tGLQX OE low to low Z (1) 0n s m i n tGHQZ OE high to high Z (1) 10 ns max
4158D–AERO–06/02 AC Parameters AC Test Conditions AC Test Loads Waveforms Figure 1 Figure 2 Figure 3 R1 2552 R1 2552 28242824 1340 3.3V 3.3V V
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select BS must be held down within GND to GND +0.2V.
- Output Enable (OE ) should be held high to keep the RAM outputs high imped-
ance, minimizing power dissipation.
- During power-up and power-down transitions CS and OE must be kept between
VCC + 0.3V and 70% of V CC, or with BS between GND and GND -0.3V.
- The RAM can begin operation > t R ns after VCC reaches the minimum operation
Figure 1. Data Retention Timing
- CS1 = VCC or CS2 = CS1 = GND, VIN = GND/VCC.
4158D–AERO–06/02 Write Cycle 1. WE Controlled. OE High During Write Write Cycle 2. WE Controlled. OE Low
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4158D–AERO–06/02 Write Cycle 3. CS 1o rC S 2 Controlled(1) Note: 1. The internal write time of the memory is defined by the overlap of CS1 LOW and CS2 HIGH and W LOW. Both signals must be activated to initiate a write and either signal can terminate a write by going in activated. The data input setup and hold timing should be referenced to the actived edge of the signal that terminates the write. Data out is high impedance if OE VIH.
4158D–AERO–06/02 Read Cycle nb 1 Read Cycle nb 2 Read Cycle nb 3
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4158D–AERO–06/02
Ordering Information
Note: 1. Contact Atmel for availability. Part Number Temperature Range Speed Package Flow MMDJ-65609EV-40 -55 to +125 °C 40 ns FP32.4 Standard Mil MMDJ-65609EV-40MQ -55 to +125 °C4 0 n s F P 3 2 . 4 Q M L Q MMDJ-65609EV-40-E 25 °C 40 ns FP32.4 Engineering Samples MMDJ-65609EV-40/883(1) - 5 5t o+ 1 2 5°C 40 ns FP32.4 MIL 883 B SMDJ-65609EV-40/883(1) - 5 5t o+ 1 2 5°C 40 ns FP32.4 MIL 883 S MM0-65609EV-40-E 25 °C 40 ns Die Engineering Samples MM0-65609EV-40MQ -55 to +125 °C4 0 n s D i e Q M L Q
4158D–AERO–06/02 Package Drawing 32-pin Flat Pack (400 Mils)
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