ML01618

ML0XX18 MITSUBISHI | Alldatasheet

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MITSUBISHI ICs for Optical Communication M L 0 X X 1 8 10Gb/s EA Modulator Driver IC MITSUBISHI ELECTRIC - 1 - Notice: This is not a final specification. Some parametric limits are subject to change. ‘04/1/14 rev.2.1 GENERAL DESCRIPTION The ML0XX18 is an external modulator driver for 10Gb/s optical communication systems. Output voltage swing, output voltage offset, and output voltage cross-point are adjustable by controls of current inputs. A D-FF and a selector are integrated on the chip to implement select able re-timing/bypass function. Data and clock inputs have high sensitivity of 200mV differential amplitude. Both DC/AC-coupled connections are allowed for the data inputs. Clock input supports AC-coupled connection. The ML0XX18 is available in a 32-pin Small Lead-frame Package (SLP-type) or in a die form.

FEATURES

• Operation for 10Gbps Optical Communication ·Adjustable Output Modulation Voltage:
• On-chip Input / Output 50Ω Termination Vo-pp= 1 – 3Vpp
• Built-in D-FF ·Adjustable Output Voltage Offset: (Retiming and Non-retiming Mode Selectable) Voh= -1.0 – 0V
• Output Voltage Swing: ·Adjustable Output Voltage Cross-Point: Vo-pp(Max.)=3 Vp-p min. @RL=50Ω CP= 30 - 75%
• The -5.2V Single Power Supply
• DC or AC Coupled Data Input with High Sensitivity of 200mV Differential (100mV per side). APPLICATION
• SONET OC-192 and SDH STM-64 Transmission systems
• 10Gb/s Ethernet Modules
• 10Gb/s Fibre Channel Modules RECOMMENDED OPERATING CONDITIONS Ratings Symbol Parameter Test Conditions Min. Typ. Max. Unit VEE Supply Voltage — -5.46 -5.2 -4.94 V VGNDO VGNDON Driver Output Termination Voltage (GNDO/GNDON) RL=50Ω — 0 — V VDATA DATA Input Voltage Amplitude AC-coupled/side 0.1 0.25 1 V VDATA(High) DATA Input Level High DC-coupled -0.45 -0.375 -0.0 V VDATA(Low) DATA Input Level Low DC-coupled -1.0 -0.625 -0.55 V VCLK CLK Input Voltage Amplitude AC-coupled/side 0.1 0.25 1 V IM Output Voltage Modulation Control Current — 0 — 6.0 mA Bias 0 — 6.0 mA IOFS Output Voltage offset Control Current Non-Bias — Floating — mA ICRSADJ Cross-Point Control Cu rrent — 0.25 0.35 0.5 mA TC Operating Case Temperature — 0 — 85 ºC < Keep safety first in your circuit designs! > Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (ⅰ)placement of Substitutive, auxiliary circuits, (ⅱ)use of non-flammable material or (ⅲ)prevention against any malfunction or mishap.

MITSUBISHI ICs for Optical Communication M L 0 X X 1 8 10Gb/s EA Modulator Driver IC MITSUBISHI ELECTRIC - 2 - Notice: This is not a final specification. Some parametric limits are subject to change. ‘04/1/14 rev.2.1 ABSOLUTE MAXIMUM RATINGS Ratings Symbol Parameter Min. Max. Unit VEE Supply Voltage -7.0 0.5 V All Pins V EE 0.5 V VDATA, VCLK Input Voltage -6 0.5 V VOUT Output Voltage -4 2.5 V IOUT Output Current — 100 mA IM Output Voltage Modulation Control Current — 10 mA IOFS Output Voltage offset Control Current — 10 mA ICRSADJ Cross-Point Control Current — 3 mA TJ Junction Temperature -40 150 ºC TSTG Storage Temperature -40 150 ºC ELECTRICAL CHARACTERISTICS ( Ta = 25±3ºC, VEE =-5.2V, fDATA =10.3Gb/s, PRBS 231-1, RL=50Ω) Ratings Symbol Parameter Test Conditions Min. Typ. Max. Unit fDATA Maximum Data Rate NRZ — 10.3 — Gb/s fCLK Clock Rate 1.0 10.3 — GHz Retiming mode — 310 TBDIEE Power Supply Current IOFS=floating, IM=6mA, CP=50%, AC-coupled inputs Non retiming mode — 270 TBD mA VO-PP (Max.) Output Voltage Swing(Max.) IOFS=floating, IM=6mA, CP=50% — 3.0 — Vp-p VO-PP (Min.) Output Voltage Swing(Min.) IOFS=floating, IM=2mA, CP=50% — 1.0 — Vp-p VOH Output High Voltage IOFS=floating, IM=6mA, CP=50% — 0 — V VOL Output Low Voltage IOFS=floating, VOFS=0V — -3.2 — V VOFS Output Offset Voltage -1.0 — 0 V CP Cross-point Control Range TBD — 75 % tR Rise Time IOFS=floating, IM=6mA, CP=50%, 20-80% — 30 — ps tF Fall Time IOFS=floating, IM=6mA, CP=50%, 20-80% — 30 — ps Retiming mode — 12 — ps JITPP Jitter P-P IOFS=floating, IM=6mA, CP=50%, Non retiming mode — 12 — ps PM Phase Margin 270 — — degrees S11 (Data) Data Input Reflection Coefficient 50MHz to 10GHz － -10 － dB S11 (CLK) Clock Input Reflection Coefficient 1GHz to 10GHz － -10 － dB S22 Output Reflection Coefficient 50MHz to 10GHz, DOUT =ON － -10 － dB

ORDERING INFORMATION

ML01618 32-pin SLP, 5mm x 5mm

Notice: This is not a final specification. Some parametric limits are subject to change. non-retiming operation reduces the power dissipation of the ML0XX18. The ML0XX18 has output waveform adjustment capabilities of output swing, offset level, and output cross-point. Figure 4. ML0XX18 Control Characteristics

Notice: This is not a final specification. Some parametric limits are subject to change. Figure 7. Pad assignment of ML0CP18 (Bare Die)

• The back side of die needs to be connected to GND. In other words, when VEE is supplied with -5.2V, supply 0V to the backside. In the case of positive power supply (+5.2V to GND terminals and 0V to VEE), supply +5.2V to the backside. For the detailed information for the positive power supply usage, please contact to your local rep.
• The pads specified as NC need to be left “OPEN”.
• Pad 19”GNDON”, pad 20”GNDO” and pad 36”GND” are not connected to “GND” line inside chip. Connect these pads to GND externally. 1,600um 2,300umt=75um 121110987 161413 15 38 2324252627282937 36 35 34 33 32 31 30

MITSUBISHI ICs for Optical Communication M L 0 X X 1 8 10Gb/s EA Modulator Driver IC MITSUBISHI ELECTRIC - 8 - Notice: This is not a final specification. Some parametric limits are subject to change. ‘04/1/14 rev.2.1 PAD DESCRIPTION (ML0CP18) PAD No. Symbol Description Center Coordinates Sizes PAD No. Symbol Description Center Coordinates Sizes

1 GND Ground ( 105, 1250) 90x90 20 GNDO Ground for OUT (2195, 950) 90x90

2 DATA Data Input

Positive ( 105, 1100) 90x90 21 OUT Data Output Positive (2195, 1100) 90x90

3 GND Ground ( 105, 950) 90x90 22 GND Ground (2195, 1250) 90x90

4 GND Ground ( 105, 650) 90x90 23 CSEL

(2195,1495) 90x90

5 DATAN Data Input

Negative ( 105, 500) 90x90 24 NC No Connection (2075,1495) 90x90

6 GND Ground ( 105, 350) 90x90 25 IOFS

(1955,1495) 90x90

7 GND Ground (700, 105) 90x90 26 NC No Connection (1835,1495) 90x90

8 CLK Clock Input

Positive (850, 105) 90x90 27 IM Output Swing Control Current (1715,1495) 90x90

9 GND Ground (1000, 105) 90x90 28 NC No Connection (1595,1495) 90x90

10 GND Ground (1300, 105) 90x90 29 VEE Supply Voltage (1465,1495) 90x90

11 CLKN Clock Input

Negative (1450, 105) 90x90 30 VEE Supply Voltage (1255,1495) 90x90

12 GND Ground (1600, 105) 90x90 31 VEE Supply Voltage (1045,1495) 90x90

13 NC No Connection (1835, 105) 90x90 32 VEE Supply Voltage (835,1495) 90x90

14 NC No Connection (1955, 105) 90x90 33 NC No Connection (705,1495) 90x90

15 NC No Connection (2075, 105) 90x90 34 ICRSADJ Cross Point Adjust

Control Current (585,1495) 90x90

16 NC No Connection (2195, 105) 90x90 35 NC No Connection (465,1495) 90x90

17 GND Ground (2195, 350) 90x90 36 GND Ground (345,1495) 90x90

18 OUTN Data output

Negative (2195, 500) 90x90 37 NC No Connection (225,1495) 90x90

19 GNDON Ground for OUTN (2195, 650) 90x90 38 IINBIAS Input Bias Level

Control Current (105,1495) 90x90

MITSUBISHI ICs for Optical Communication M L 0 X X 1 8 10Gb/s EA Modulator Driver IC MITSUBISHI ELECTRIC - 9 - Notice: This is not a final specification. Some parametric limits are subject to change. ‘04/1/14 rev.2.1 NOTIFICATION FOR BARE DIE SUPPLY (ML0CP18) 1. Quality After the reception of bare die by the customer, performance, yield and reliability of the application of the bare die will not be guaranteed. The supplier does not have the responsibility for field failures in the applied product. 2. Storage a) Store in dry nitrogen. < Before opening shipped conductive film bag (dry N2 sealed) > Temperature : 15 to 35 deg. C Humidity : 45% - 75% RH Term : 3 months < After opening > Temperature : 15 to 35 deg. C Atmosphere : Dry N2 gas (The dew point should be less than -30 deg. C) (No contact with gas including ammonia and sulfur) Term : The appearance of the bare die is not guaranteed after its opening. b) Don’t apply excess vibration or shock. 3. Opening a package a) Handle devices in clean room or on clean bench. b) Take measures to avoid electro-static damage. c) To open a film bag, please use scissors or a knife. d) When taking out the devices, never touch devices barehanded. Please use clean tweezers or similar. When use tweezers, please catch a device by side to avoid cracking or damaging the device. Since gallium arsenide is more brittle material than silicon, special care must be taken. 4. Die bonding The following methods are recommended for die bonding. a) Die should be bonded lower than 300 deg. C. b) The time duration of die bonding at maximum te mperature is recommended to be shorter than 15 sec. c) Cool down gradually, to avoid chip crack. d) All die bonding equipment and workers should be grounded. 5. Wire bonding The following methods are recommended for wire bonding. a) Bonding force of wire bonding is recommended to be less than 55 grams with ultrasonic. b) Check ultrasonic power not to damage on die and die pads. c) Cool down gradually. d) All wire bonding equipment and workers should be grounded. 6. Design a) It is recommended to use this product in a hermetic sealed condition (N2 sealed). b) It is recommended for customer to verify the perfo rmance and the qualification by customer's final product. Especially, oscillation and noise generation might happen.