MIP501 PANASONIC | Alldatasheet
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Intelligent Power Devices (IPDs) MIP501, MIP502 MIP501 , MIP502 Silicon MOS IC n Features l High breakdown voltage, N-Ch MOS FET output (VDSS > 40V Ron < 0.5Ω ) l Over-current-protection function built-in l Reset function built-in l Direct drive possible by the logic circuit n Applications l Lamp drive n Absolute Maximum Ratings (Ta= 25˚C) MIP501 Unit : mm n Block Diagram Parameter Output breakdown voltage Output peak current Output current Input voltage Input current Allowable power MIP501 dissipation MIP502 Junction temperature Storage temperature Operating temperature Symbol V DSS IOP IOA V IN IIN PD Tj Tstg Topr Rating 1.7 – 0.5 to 6 ±10 1.5 1 * 150 – 55 to +150 – 40 to + 85 Unit V A A V mA W * The value at mounted on PCB (glass epoxy resin: 100 ×100mm). (For MIP502 only) 1 : IN 2 : Drain 3 : Source MT3 Type Package MIP502 Unit : mm 1 : Source 2 : Drain 3 : IN TO-92NL Type Package Over voltage protection circuit Over current protection circuitReset circuit SOURCE IN DRAIN 7.5–0.2 4.5 –0.2 90° 0.8C0.8C 0.4–0.1 0.8C 123 0.5–0.1 0.7–0.1 1.0–0.1 0.85–0.10.65–0.1 0.65–0.1 2.5–0.1 10.8–0.216.0–1.0 3.8–0.2 5.0–0.2 13.5–0.5 0.7–0.2 8.0–0.2 1.27 123 1.27 4.0–0.2 0.45 +0.15 -0.10.45 +0.15 -0.1 2.3–0.2 0.7–0.1 2.54–0.15
n Electrical Characteristics (Ta= 25˚C) n Pin Descriptions No.1 pin : GND pin. Connect to the GND pin. (Source) No.2 pin : Output pin. Connect to the load. The current flowing into this terminal is limited at about 5A. When this termi- nal voltage exceeds about 4.6V, the output MOS FET is turned OFF. (Drain) No.3 pin : Input pin. The signal from the logic is inputted to drive the device. When this is open, the output MOS FET turns OFF. Parameter Drain-Source ON-resistance Drain voltage Drain breakdown voltage Drain leakage current (1) Drain leakage current (2) Input voltage Over-current protection Reset voltage Input current Symbol R DS (ON) V DS (ON) V DSS IDSS (1) IDSS (2) V IN (H) V IN (L) IOCP V RESET IIN (opr) Condition V IN = 5V , IO =1.5A V IN = 5V , IO =1.5A IDSS = 3mA V DSS = 40V V DSS = 25V V IN = 5V V IN = 5V V IN = 5V , VDS =1V Min 4.5 Typ 5.0 5.0 4.6 Max 0.5 0.75 3.0 1.5 6.0 0.8 1.0 Unit Ω V V mA mA V V A V mA Intelligent Power Devices (IPDs) MIP501, MIP502
Intelligent Power Devices (IPDs) MIP501, MIP502 V DSS – Ta I DSS – Ta Is – Ta I IN –VIN R on – Ta P D – Ta IIN – Ta 100 0-50 0 50 MIP502 MIP501 100 Ambient temperature Ta (˚C) SS Output breakdown voltage VDSS (V) Ambient temperature Ta (˚C) 0-50 0 50 V DS =2V VDS =3V 100 Detected value at over current Is (˚C) 0.2 0.4 0.6 -50 0 50 100 Ambient temperature Ta (˚C) ON-resistance Ron (Ω ) 100 0-50 0 50 100 Ambient temperature Ta (˚C) Input current IIN (µA) N 0-50 0 50 100 Ambient temperature Ta (˚C) Output leakage current IDSS (mA) SS 100 0 456 Input voltage VIN (V) Input current IIN (µA) 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 40 80 Ambient temperature Ta (˚C) Allowable drain loss PD (W) 120 160 MIP501 MIP502