MIG75Q6CSB1X MITSUBISHI | Alldatasheet

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Technical content

MITSUBISHI SEMICONDUCTOR <Intelligent Power Module> MIG75Q6CSB1X (1200V/75A 6in1) High Power Switching Applications Motor Control Applications

  • Integrates inverter and control circuits (IGBT drive units, protection units for short-circuit current, over current, under voltage and over temperature) in one package.
  • The electrodes are isolated from case.
  • V CE (sat) = 2.2 V (typ.)
  • UL recognized: File No. E87989 Equivalent Circuit GND IN FO V D VS OUTGND GND IN FO V D VS OUT GND GND IN FO V D VS OUT GND GND IN FO V D VS OUT GND UV W B N P 16 19 20 18 17 14 1315 4 3 2 1 8 7 6 5 12 11 10 9 GNDINFO V D VS OUTGND GND IN FO V D VS OUT GND
  1. IN (Z) 20. GND (L) Unit: mm
  1. IN (Z) 20. GND (L) Unit: mm

Maximum Ratings (Tj = 25°C) Stage Characteristic Condition Symbol Ratings Unit Supply voltage P-N power terminal V CC 900 V Collector-emitter voltage ⎯ V CES 1200 V Collector current Tc = 25°C, DC I C 75 A Forward current Tc = 25°C, DC I F 75 A Collector power dissipation Tc = 25°C P C 830 W Inverter Junction temperature ⎯ T j 150 °C Control supply voltage V D-GND terminal V D 20 V Input voltage IN-GND terminal V IN 20 V Fault output voltage FO-GND terminal V FO 20 V Control Fault output current FO sink current I FO 14 mA Operating temperature ⎯ Tc −20 to 100 °C Storage temperature range ⎯ Tstg −40 to 125 °C Isolation voltage AC 1 minute V ISO 2500 V Screw torque (terminal) M4 ⎯ 2 N·m Module Screw torque (mounting) M5 ⎯ 3 N·m

Electrical Characteristics

  1. Inverter Stage Characteristic Symbol Test Condition Min Typ. Max Unit Tj = 25°C ⎯ ⎯ 1 Collector cut-off current I CEX V CE = 1200 V Tj = 125°C ⎯ ⎯ 10 mA Collector-emitter saturation voltage V CE (sat) VD = 15 V, IC = 75 A, VIN = 15 V → 0 V Tj = 125°C ⎯ ⎯ 3.0 V Forward voltage V F I F = 75 A, Tj = 25°C ⎯ 2.4 2.8 V ton ⎯ 2.0 3.0 tc (on) ⎯ 0.3 ⎯ trr ⎯ 0.3 ⎯ toff ⎯ 1.5 2.5 Switching time tc (off) VCC = 600 V, IC = 75 A, VD = 15 V, VIN = 15 V ↔ 0 V, Tj = 25°C, Inductive load (Note 1) ⎯ 0.4 ⎯ µs Note 1: Switching time test circuit and timing chart.
  1. Control Stage (Tj = 25°C) Characteristic Symbol Test Condition Min Typ. Max Unit High side I D (H) ⎯ 13 17 Control circuit current Low side I D (L) VD = 15 V ⎯ 39 51 mA Input-on signal voltage V IN (on) V D = 15 V 1.4 1.6 1.8 V Input-off signal voltage V IN (off) V D = 15 V 2.2 2.5 2.8 V Protection I FO (on) 8 10 12 Fault output current Normal I FO (off) VD = 15 V ⎯ ⎯ 0.1 mA Over current protection trip level Inverter OC V D = 15 V, Tj <= 125°C 120 ⎯ ⎯ A Short-circuit current protection trip level Inverter SC V D = 15 V, Tj <= 125°C 120 ⎯ ⎯ A Over current cut-off time t off (OC) V D = 15 V ⎯ 5 ⎯ µs Trip level OT 110 118 125 Over temperature protection Reset level OTr Case temperature ⎯ 98 ⎯ Trip level UV 11.0 12.0 12.5 Control supply under voltage protection Reset level UVr 12.0 12.5 13.0 V Fault output pulse width t FO V D = 15 V 1 2 3 ms 3. Thermal Resistance (Tc = 25°C) Characteristic Symbol Test Condition Min Typ. Max Unit Inverter IGBT stage ⎯ ⎯ 0.15 Junction to case thermal resistance R th (j-c) Inverter FRD stage ⎯ ⎯ 0.35 °C/W Case to fin thermal resistance R th (c-f) Compound is applied ⎯ 0.017 ⎯ °C/W

Switching Time Test Circuit Timing Chart 2.5 V 1.6 V 15 V 10% 10% toff tc (off) 10% 10% ton tc (on) 90% Irr trr Irr 20% Irr Input Pulse VIN Waveform IC Waveform VCE Waveform 90% PG TLP559 (IGM) Intelligent power module VD IN GND OUT VS GND U (V, W) P VCC VD IN GND OUT VS GND IF = 16 mA N 15 V 0.1 µF 22 µF 15 kΩ 15 V 0.1 µF 22 µF 15 kΩ

  1. Recommended conditions for application Characteristic Symbol Test Condition Min Typ. Max Unit Supply voltage VCC P-N Power terminal ⎯ 600 800 V Control supply voltage VD V D-GND Signal terminal 13.5 15 16.5 V Carrier frequency fc PWM Control ⎯ ⎯ 20 kHz Dead time tdead Switching time test circuit (see page.6) (Note 2) 3 ⎯ ⎯ µ s Note 2: The table lists Dead time requirements for the module input, excluding photocoupler delays. When specifying dead time requirements for the photocoupler input, please add photocoupler delays to the dead time given above. Dead Time Timing Chart tdead 15 V VIN Waveform VIN Waveform 15 V tdead

IC – VCE IC – VCE Switching time – IC Switching time – IC IF – VF trr, Irr – IF Collector-emitter voltage V CE (V) Collector-emitter voltage V CE (V) Collector current I C (A) Collector current I C (A) Forward voltage V F (V) Forward current I F (A) Collector current I C ( A ) Collector current I C ( A ) Switching time ( µs) Switching time ( µs) Peak reverse recovery current Irr (A) Reverse recovery time trr ( ×10 nS) Forward current I F (A) 150 0 5 2 100 1 3 4 VD = 17 V VD = 13 V VD = 15 V Common emitter Tj = 25°C 150 05 2 100 13 4 VD = 17 V VD = 13 V VD = 15 V Common emitter Tj = 125°C 0.3 0.1 0.03 0.01 20 60 8010 40 70 30 50 Tj = 25°C VCC = 600 V VD = 15 V L-LOAD ton toff tc (off) tc (on) 0.3 0.1 0.03 0.01 20 60 80 10 40 70 30 50 Tj = 125°C VCC = 600 V VD = 15 V L-LOAD ton toff tc (off) tc (on) 150 100 52 1 3 4 Common cathode : Tj = 25°C : Tj = 125°C 100 20 60 80 10 40 70 30 50 Common cathode : Tj = 25°C : Tj = 125°C Irr trr

OC – Tc ID (H) – fc ID (L) – fc Reverse bias SOA Rth (t) – tw Inverter stage Case temperature Tc (°C) Carrier frequency fc (kHz) Carrier frequency fc (kHz) Collector-emitter voltage V CE ( V ) Pulse width tw (s) High side control circuit current I D (H) (mA) Over current protection trip level OC (A) Collector current I C ( A ) Low side control circuit current I D (L) (mA) Transient thermal resistance Rth (t)/(°C/W) 25 0 VD = 15 V 5 10 15 20 120 100 140 1400 0 200 400 600 800 1000 1200 Tj <= 125°C VD = 15V OC 0.01 100.001 0.01 0.1 1 0.1 Diode stage Transistor stage TC = 25°C 1500 VD = 15 V Inverter stage 25 50 75 100 125 200 150 100 250 5 10 15 20 VD = 15 V

Turn on loss – IC Turn off loss – IC Collector current I C (A) Collector current I C (A) Turn off loss Eoff (mJ) Turn on loss Eon (mJ) 100 VCC = 600 V VD = 15 V L-LOAD : Tj = 25°C : Tj = 125°C 10 20 30 40 60 70 50 VCC = 600 V VD = 15 V L-LOAD : Tj = 25°C : Tj = 125°C 10 20 30 40 60 70 50 0 100