MIG300Q2CMB1X MITSUBISHI | Alldatasheet

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Technical content

MITSUBISHI SEMICONDUCTOR <Intelligent Power Module> MIG300Q2CMB1X (1200V/300A 2in1) High Power Switching Applications Motor Control Applications

  • Integrates inverter power circuits and control circuits (IGBT drive unit, units for protection against short-circuit current, overcurrent, undervoltage and overtemperature) into a single package.
  • The electrodes are isolated from the case.
  • Low thermal resistance
  • V CE (sat) = 2.4 V (typ.)
  • UL recognized: File No.E87989
  • Weight: 380 g (typ.) Equivalent Circuit 1. FO (L) 2. GND (L) 3. IN (L) 4. V D (L) 5. FO (H) 6. GND (H) 7. IN (H) 8. V D (H) FO GND IN V D 1 2 3 4 GND V S OUT C2/E1 FO GND IN V D 5 6 7 8 GND V S OUT C1E2

Unit: mm 1. FO (L) 2. GND (L) 3. IN (L) 4. V D (L) 5. FO (H) 6. GND (H) 7. IN (H) 8. V D (H)

Unit: mm 1. FO (L) 2. GND (L) 3. IN (L) 4. V D (L) 5. FO (H) 6. GND (H) 7. IN (H) 8. V D (H)

Maximum Ratings (Tj = 25°C) Stage Characteristics Condition Symbol Rating Unit Supply voltage P-N power terminal V CC 900 V Collector-emitter voltage ⎯ V CES 1200 V Collector current Tc = 25°C, DC I C 300 A Forward current Tc = 25°C, DC I F 300 A Collector power dissipation Tc = 25°C P C 2840 W Inverter Junction temperature ⎯ T j 150 °C Control supply voltage V D-GND terminal V D 20 V Input voltage IN-GND terminal V IN 20 V Fault output voltage FO-GND terminal V FO 20 V Control Fault output current FO sink current I FO 10 mA Operating temperature ⎯ Tc −20~+100 °C Storage temperature ⎯ Tstg −40~+125 °C Isolation voltage AC 1 min V ISO 2500 V Screw torque (terminal) M6 ⎯ 3 N ･m Module Screw torque (mounting) M5 ⎯ 3 N ･m

Electrical Characteristics

  1. Inverter stage Characteristics Symbol Test Condition Min Typ. Max Unit Tj = 25°C ⎯ ⎯ 1 Collector cut-off current I CEX V CE = 1200 V Tj = 125°C ⎯ ⎯ 10 mA Collector-emitter saturation voltage V CE (sat) VD = 15 V IC = 300 A VIN = 15 V → 0 V Tj = 125°C ⎯ 2.8 ⎯ V Forward voltage V F I F = 300 A, Tj = 25°C ⎯ 2.2 2.6 V ton ⎯ 2.0 3.0 tc (on) ⎯ 0.5 ⎯ trr ⎯ 0.3 ⎯ toff ⎯ 1.6 2.5 Switching time tc (off) VCC = 600 V, IC = 300 A VD = 15 V, VIN = 15 V ↔ 0 V Tj = 25°C, Inductive load (Note 1) ⎯ 0.3 ⎯ µs Note 1: Switching time test circuit & timing chart
  1. Control stage (Tj = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit High side I D (H) ⎯ 13 17 Control circuit current Low side I D (L) VD = 15 V ⎯ 13 17 mA Input on signal voltage V IN (on) 1.4 1.6 1.8 Input off signal voltage V IN (off) VD = 15 V 2.2 2.5 2.8 V Protection I FO (on) 8 10 12 Fault output current Normal I FO (off) VD = 15 V ⎯ ⎯ 0.1 mA Overcurrent protection trip level OC V D = 15 V, Tj <= 125°C 480 ⎯ ⎯ A Short-circuit protection trip level SC V D = 15 V, Tj <= 125°C 480 ⎯ ⎯ A Overcurrent cut-off time t off (OC) V D = 15 V ⎯ 5 ⎯ µs Trip level OT 110 118 125 Overtemperature protection Reset level OTr Case temperature ⎯ 98 ⎯ Trip level UV 11.0 12.0 12.5 Control supply under voltage protection Reset level UVr 12.0 12.5 13.0 V Fault output pulse width t FO V D = 15 V 1 2 3 ms 3. Thermal resistance (Tc = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit IGBT ⎯ ⎯ 0.044 Junction to case thermal resistance R th (j-c) FRD ⎯ ⎯ 0.068 °C/W Case to fin thermal resistance R th (c-f) Compound is applied ⎯ 0.013 ⎯ °C/W

Switching Time Test Circuit Timing Chart PG TLP559 (IGM) 15 V 0.1 µF 68 µF 15 kΩ Intelligent power module VD IN GND OUT VS GND C2/E1 VCC 15 V 0.1 µF 68 µF 15 kΩ VD IN GND OUT VS GND IF = 16 mA Input pulse VIN Waveform IC Waveform VCE Waveform 2.5 V 1.6 V 15 V 10% 10% toff tc (off) 10% 10% ton tc (on) 90% Irr trr Irr 20% Irr 90%

  1. Recommended conditions for application Characteristics Symbol Test Condition Min Typ. Max Unit Supply voltage V CC P-N power terminal ⎯ 600 800 V Control supply voltage V D V D-GND signal terminal 13.5 15 16.5 V Carrier frequency fc PWM control ⎯ ⎯ 20 kHz Dead time t dead Switching time test circuit (Note 2) 5 ⎯ ⎯ µ s Note 2: The table lists Dead time requirements for the module input, excluding photocoupler delays. When specifying dead time requirements for the photocoupler input, please add photocoupler delays to the dead time given above. Dead Time Timing Chart tdead 15 V VIN Waveform VIN Waveform 15 V tdead

Forward current I F (A) Collector-emitter voltage V CE (V) IC – VCE Collector current I C (A) Collector current I C (A) Collector current I C (A) Switching time – IC Switching time ( µs) Forward voltage V F (V) IF – VF Forward current I F (A) trr, Irr – IF Collector-emitter voltage V CE (V) IC – VCE Collector current I C (A) Switching time – IC Switching time ( µs) Tj = 25°C VCC = 600 V VD = 15 V L-LOAD 0.1 100 200 300 400 ton toff tc (on) tc (off) 0.01 700 500 200 1 2 3 4 100 300 400 600 Common cathode : T j = 25°C : T j = 125°C Peak reverse recovery current I rr (A) Reverse recovery time t rr ( × 10 ns) 1000 100 trr 100 200 300 400 Common cathode : T j = 25°C : T j = 125°C Irr 0.1 0.01 100 200 300 400 ton toff tc (on) tc (off) Tj = 125°C VCC = 600 V VD = 15 V L-LOAD 700 Common emitter Tj = 125°C VD = 13 V 100 200 300 400 500 600 1 2 3 4 5 VD = 15 V VD = 17 V 700 Common emitter Tj = 25°C VD = 13 V 100 200 300 400 500 600 1 2 3 4 5 VD = 15 V VD = 17 V

Turn on loss E on (mJ) Transient thermal resistance R th (t) (°C/W) Case temperature Tc (°C) OC – Tc Over current protection trip level OC (A) Carrier frequency f c (kHz) ID – fc Control circuit current I D (mA) Collector-emitter voltage V CE (V) Collector current I C (A) Pulse width t w (s) Rth (t) – tw Collector current I C (A) Turn on loss – IC Collector current I C (A) Turn off loss – IC Turn off loss E off (mJ) Reverse bias SOA 0.001 0.1 0.01 0.001 0.0003 0.003 0.03 0.3 0.01 0.1 1 10 Diode stage Transistor stage Tc = 25°C 100 0.1 0 100 200 300 400 VCC = 600 V VD = 15 V L-LOAD : T j = 25°C : T j = 125°C 100 0.1 0 100 200 300 400 VCC = 600 V VD = 15 V L-LOAD : T j = 25°C : T j = 125°C 0 800 1600400 120 480 600 Tj <= 125°C VD = 15 V 240 360 1200 OC 0 10 15 25 5 20 VD = 15 V Tj = 25°C 1000 VD = 15 V 200 400 600 800 25 50 75 125 150 100