MIG200Q2CSB1X MITSUBISHI | Alldatasheet

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Technical content

MITSUBISHI SEMICONDUCTOR <Intelligent Power Module> MIG200Q2CSB1X (1200V/200A 2in1) High Power Switching Applications Motor Control Applications

  • Integrates inverter power circuits and control circuits (IGBT drive units, protection units for short-circuit current, over current, under voltage and over temperature) in one package.
  • The electrodes are isolated from case.
  • VCE (sat) = 2.2 V (typ.)
  • UL recognized File No. E87989
  • Weight: 278 g (typ.) Equivalent Circuit 2 1 3 4 VDGNDFO IN VS OUTGND 65 7 8 VDGNDFO IN VS OUTGND E2 C2/E1 C1 1. FO (L) 2. GND (L) 3. IN (L) 4. VD (L) 5. FO (H) 6. GND (H) 7. IN (H) 8. VD (H) 2005-04-01 1/10

Unit: mm 7. IN (H) 8. VD (H) 2005-04-01 2/10

Unit: mm 7. IN (H) 8. VD (H) 2005-04-01 3/10

Maximum Ratings (Tj = 25°C) Stage Characteristic Condition Symbol Ratings Unit Supply voltage P-N power terminal VCC 900 V Collector-emitter voltage ⎯ VCES 1200 V Collector current Tc = 25°C, DC IC 200 A Forward current Tc = 25°C, DC IF 200 A Collector power dissipation Tc = 25°C PC 2010 W Inverter Junction temperature ⎯ Tj 150 °C Control supply voltage VD-GND terminal VD 20 V Input voltage IN-GND terminal VIN 20 V Fault output voltage FO-GND (L) terminal VFO 20 V Control Fault output current FO sink current IFO 14 mA Operating temperature ⎯ Tc −20~+100 °C Storage temperature range ⎯ Tstg −40~+125 °C Isolation voltage AC 1 minute VISO 2500 V Module Screw torque (terminal/mounting) M5 ⎯ 3 N·m

Electrical Characteristics

  1. Inverter Stage Characteristic Symbol Test Condition Min Typ. Max Unit Tj = 25°C ⎯ ⎯ 1 Collector cut-off current ICEX VCE = 1200 V Tj = 125°C ⎯ ⎯ 10 mA Collector-emitter saturation voltage VCE (sat) VD = 15 V, IC = 200 A, VIN = 15 V → 0 V Tj = 125°C ⎯ ⎯ 3.0 V Forward voltage VF IF = 200 A, Tj = 25°C ⎯ 2.4 2.8 V ton ⎯ 2.0 3.0 tc (on) ⎯ 0.3 ⎯ trr ⎯ 0.3 ⎯ toff ⎯ 1.5 2.5 Switching time tc (off) VCC = 600 V, IC = 200 A, VD = 15 V, VIN = 15 V ↔ 0 V, Tj = 25°C, Inductive load (Note 1) ⎯ 0.3 ⎯ µs Note 1: Switching time test circuit and timing chart. 2005-04-01 4/10
  1. Control Stage (Tj = 25°C) Characteristic Symbol Test Condition Min Typ. Max Unit High side ID (H) ⎯ 13 17 Control circuit current Low side ID (L) VD = 15 V ⎯ 13 17 mA Input-on signal voltage VIN (on) VD = 15 V 1.4 1.6 1.8 V Input-off signal voltage VIN (off) VD = 15 V 2.2 2.5 2.8 V Protection IFO (on) 8 10 12 Fault output current Normal IFO (off) VD = 15 V ⎯ ⎯ 0.1 mA Over current protection trip level OC VD = 15 V, Tj Short-circuit current protection trip level SC VD = 15 V, Tj Over current cut-off time toff (OC) VD = 15 V ⎯ 5 ⎯ µs Trip level OT 110 118 125Over temperature protection Reset level OTr Case temperature ⎯ 98 ⎯ Trip level UV 11.0 12.0 12.5Control supply under voltage protection Reset level UVr 12.0 12.5 13.0 V Fault output pulse width tFO VD = 15 V 1 2 3 ms 3. Thermal Resistance (Tc = 25°C) Characteristic Symbol Test Condition Min Typ. Max Unit IGBT ⎯ ⎯ 0.062 Junction to case thermal resistance Rth (j-c) FRD ⎯ ⎯ 0.136 °C/W Case to fin thermal resistance Rth (c-f) Compound is applied ⎯ 0.017 ⎯ °C/W 2005-04-01 5/10

Switching Time Test Circuit TLP559 (IGM) PG 15 kΩ 68 µF 0.1 µF 15 V VS OUT VD E1/C2 GND GND VD IN GND OUT VS GND IF = 16 mA 15 kΩ 68 µF 0.1 µF 15 V IN VCC Intelligent power module Timing Chart 15 V 2.5 V 1.6 V 10% 10% toff tc (off) 10% 10% ton tc (on) 90% Irr trr Irr 20% Irr 90% Input Pulse VIN Waveform IC Waveform VCE Waveform 2005-04-01 6/10

  1. Recommended conditions for application Characteristic Symbol Test Condition Min Typ. Max Unit Supply voltage VCC P-N Power terminal ⎯ 600 800 V Control supply voltage VD VD-GND Signal terminal 13.5 15 16.5 V Carrier frequency fc PWM Control ⎯ ⎯ 20 kHz Dead time tdead Switching time test circuit (see page.6) (Note 2) 5 ⎯ ⎯ µs Note 2: The table lists Dead time requirements for the module input, excluding photocoupler delays. When specifying dead time requirements for the photocoupler input, please add photocoupler delays to the dead time given above. Dead Time Timing Chart 15 V tdead tdead VIN Waveform 15 V VIN Waveform 2005-04-01 7/10

IC – VCE IC – VCE Switching time – IC Switching time – IC IF – VF trr, Irr – IF Collector-emitter voltage VCE (V ) Collector-emitter voltage VCE (V ) Collector current IC (A ) Collector current IC (A ) Collector current IC (A ) Switching time (µs) Peak reverse recovery current Irr (A) Reverse recovery time trr (×10 nS) 400 0 52 100 300 1 3 4 VD = 17 V VD = 13 V VD = 15 V Common emitter Tj = 25°C 200 400 0 52 100 300 1 3 4 VD = 17 V VD = 13 V VD = 15 V Common emitter Tj = 125°C 200 ton toff tc (on) 0.1 0.01 100 150 250200 50 T = 25j °C V = 600 V V = 15 V L-LOAD CC D tc (off) ton toff tc (on) tc (off) 0.1 0.01 100 200 250150 50 T = 125j °C V = 600 V V = 15 V L-LOAD CC D 400 0 52 100 300 1 3 4 200 Common cathode : T = 25j °C : T = 125j °C 100 100 25050 200 150 Common cathode : T = 25j °C : T = 125j °C Irr trr Collector current IC (A ) Switching time (µs) Forward current I F (A ) Forward voltage V F ( V) Forward current I F (A ) 2005-04-01 8/10

OC – Tc ID (H) – fc ID (L) – fc Reverse bias SOA Rth (t) – tw Case temperature Tc (°C) Carrier frequency fc (kHz) Carrier frequency fc (kHz) Collector-emitter v oltage VCE ( V) High side control circuit current ID (H) (mA) Collector current IC (A ) 240 400 14000 200 400 600 800 1000 1200 160 320 Tj < = 125°C V = 15V D OC 1500 V = 15 V D 25 50 75 100 125 600 400 200 100 300 500 250 V = 15 V D 5 10 15 20 250 V = 15 V D 5 10 15 20 Diode stage Inverter stage TC = 25°C 0.001 100.001 0.01 0.1 1 0.01 0.1 Over current protection trip level OC (A) Low side control circuit current ID (L) (mA) Transient thermal resistance Rth (t)/(°C/W) Pulse width tw ( s) 2005-04-01 9/10

Turn on loss – IC Turn off loss – IC Turn off loss Eoff (mJ) V = 600 V V = 15 V CC D L-LOAD : Tj = 25°C : Tj = 125°C 100 100 150 250 50 200 0 100 100 150 250 50 200 V = 600 V V = 15 V CC D L-LOAD : Tj = 25°C : Tj = 125°C Turn on loss Eon (mJ) Collector current IC (A ) Collector current IC (A ) 2005-04-01 10/10