MIG100Q6CMB1X MITSUBISHI | Alldatasheet
Document overview
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Technical content
MITSUBISHI SEMICONDUCTOR <Intelligent Power Module> MIG100Q6CMB1X (1200V/100A 6in1) High Power Switching Applications Motor Control Applications
- Integrates inverter power circuits and control circuits (IGBT drive units, protection units for short-circuit current, over current, under voltage and over temperature) in one package.
- The electrodes are isolated from case.
- V CE (sat) = 2.4 V (typ.)
- UL recognized File No. E87989
- Weight: 385 g (typ.) Equivalent Circuit 16 19 20 N P 18 17 14 1315 4 3 2 18 7 6 5 12 11 10 9 GNDIN FO V D VS OUTGND GND IN FO V D VS OUTGND GND IN FO V D VS OUT GND GND IN FO V D VS OUTGND GND IN FO V D VS OUT GND GND IN FO V D VS OUT GND UV W
- IN (Z) 20. GND (L) Unit: mm
- IN (Z) 20. GND (L) Unit: mm
Maximum Ratings (Tj = 25°C) Stage Characteristic Condition Symbol Ratings Unit Supply voltage P-N power terminal V CC 900 V Collector-emitter voltage ⎯ V CES 1200 V Collector current Tc = 25°C, DC I C 100 A Forward current Tc = 25°C, DC I F 100 A Collector power dissipation Tc = 25°C P C 960 W Inverter Junction temperature ⎯ T j 150 °C Control supply voltage V D-GND terminal V D 20 V Input voltage IN-GND terminal V IN 20 V Fault output voltage FO-GND (L) terminal V FO 20 V Control Fault output current FO sink current I FO 14 mA Operating temperature ⎯ Tc −20~+100 °C Storage temperature range ⎯ Tstg −40~+125 °C Isolation voltage AC 1 minute V ISO 2500 V Module Screw torque (terminal/mounting) M5 ⎯ 3 N·m
Electrical Characteristics
- Inverter Stage Characteristic Symbol Test Condition Min Typ. Max Unit Tj = 25°C ⎯ ⎯ 1 Collector cut-off current I CEX V CE = 1200 V Tj = 125°C ⎯ ⎯ 10 mA Collector-emitter saturation voltage V CE (sat) VD = 15 V, IC = 100 A, VIN = 15 V → 0 V Tj = 125°C ⎯ ⎯ 3.2 V Forward voltage V F I F = 100 A, Tj = 25°C ⎯ 2.2 2.6 V ton ⎯ 3.0 4.0 tc (on) ⎯ 0.35 ⎯ trr ⎯ 0.3 ⎯ toff ⎯ 1.5 2.5 Switching time tc (off) VCC = 600 V, IC = 100 A, VD = 15 V, VIN = 15 V ↔ 0 V, Tj = 25°C, Inductive load (Note 1) ⎯ 0.3 ⎯ µs Note 1: Switching time test circuit and timing chart.
- Control Stage (Tj = 25°C) Characteristic Symbol Test Condition Min Typ. Max Unit High side I D (H) ⎯ 13 17 Control circuit current Low side I D (L) VD = 15 V ⎯ 39 51 mA Input-on signal voltage V IN (on) V D = 15 V 1.4 1.6 1.8 V Input-off signal voltage V IN (off) V D = 15 V 2.2 2.5 2.8 V Protection I FO (on) ⎯ 10 12 Fault output current Normal I FO (off) VD = 15 V, Tj <= 125°C ⎯ ⎯ 0.1 mA Over current protection trip level OC V D = 15 V, Tj <= 125°C 160 ⎯ ⎯ A Short-circuit current protection trip level SC V D = 15 V, Tj <= 125°C 160 ⎯ ⎯ A Over current cut-off time t off (OC) V D = 15 V ⎯ 5 ⎯ µs Trip level OT 110 118 125 Over temperature protection Reset level OTr Case temperature ⎯ 98 ⎯ Trip level UV 11.0 12.0 12.5 Control supply under voltage protection Reset level UVr 12.0 12.5 13.0 V Fault output pulse width t FO V D = 15 V 1 2 3 ms 3. Thermal Resistance (Tc = 25°C) Characteristic Symbol Test Condition Min Typ. Max Unit IGBT ⎯ ⎯ 0.130 Junction to case thermal resistance R th (j-c) FWD ⎯ ⎯ 0.190 °C/W Case to fin thermal resistance R th (c-f) Compound is applied ⎯ 0.013 ⎯ °C/W
Switching Time Test Circuit Timing Chart 2.5 V 1.6 V 15 V 10% 10% toff tc (off) 10% 10% ton tc (on) 90% Irr trr Irr 20% Irr Input Pulse VIN Waveform IC Waveform VCE Waveform 90% PG TLP559 (IGM) Intelligent power module VD IN GND OUT VS GND U (V, W) P VCC VD IN GND OUT VS GND IF = 16 mA N 15 V 0.1 µF 47 µF 15 kΩ 15 V 0.1 µF 47 µF 15 kΩ
- Recommended conditions for application Characteristic Symbol Test Condition Min Typ. Max Unit Supply voltage VCC P-N Power terminal ⎯ 600 800 V Control supply voltage VD V D-GND Signal terminal 13.5 15 16.5 V Carrier frequency fc PWM Control ⎯ ⎯ 20 kHz Dead time tdead Switching time test circuit (see page.6) (Note 2) 4 ⎯ ⎯ µ s Note 2: The table lists Dead time requirements for the module input, excluding photocoupler delays. When specifying dead time requirements for the photocoupler input, please add photocoupler delays to the dead time given above. Dead Time Timing Chart tdead 15 V VIN Waveform VIN Waveform 15 V tdead
IC – VCE IC – VCE Switching time – IC Switching time – IC IF – VF trr, Irr – IF Collector-emitter voltage V CE (V) Collector-emitter voltage V CE (V) Collector current I C (A) Collector current I C (A) Forward voltage V F (V) Forward current I F (A) Collector current I C ( A ) Collector current I C ( A ) Switching time ( µs) Switching time ( µs) Peak reverse recovery current Irr (A) Reverse recovery time trr ( ×10 nS) Forward current I F (A) 200 05 2 150 13 4 VD = 17 V VD = 13 V VD = 15 V Common emitter Tj = 125°C 100 ton toff tc (on) tc (off) 0.1 0.01 40 80 120 100 60 20 Tj = 25°C VCC = 600 V VD = 15 V L-LOAD ton toff tc (on) tc (off) 0.1 0.01 40 80 120 100 6020 Tj = 125°C VCC = 600 V VD = 15 V L-LOAD 200 0 5 2 150 1 3 4 VD = 17 V VD = 13 V VD = 15 V Common emitter Tj = 25°C 100 200 0 5 2 150 1 3 4 100 Common cathode : Tj = 25°C : Tj = 125°C 100 40 120 20 80 60 100 Common cathode : Tj = 25°C : Tj = 125°C Irr trr
OC – Tc ID (H) – fc ID (L) – fc Reverse bias SOA Rth (t) – tw Case temperature Tc (°C) Carrier frequency fc (kHz) Carrier frequency fc (kHz) Collector-emitter voltage V CE ( V ) Pulse width tw (s) High side control circuit current I D (H) (mA) Over current protection trip level OC (A) Collector current I C ( A ) Low side control circuit current I D (L) (mA) Transient thermal resistance R th (t)/(°C/W) 1500 VD = 15 V 25 50 75 100 125 300 200 100 150 250 100 250 5 10 15 20 VD = 15 V 120 200 1400 0 200 400 600 800 1000 1200 160 Tj <= 125°C VD = 15V OC 0.001 100.001 0.01 0.1 1 0.01 0.1 Diode stage Transistor stage TC = 25°C 25 0 VD = 15 V 5 10 15 20
Turn on loss – IC Turn off loss – IC Collector current I C (A) Collector current I C (A) Turn off loss Eoff (mJ) Turn on loss Eon (mJ) 100 120 20 40 80 100 60 VCC = 600 V VD = 15 V L-LOAD : Tj = 25°C : Tj = 125°C VCC = 600 V VD = 15 V L-LOAD : Tj = 25°C : Tj = 125°C 100 20 40 80 100 60 0 120