MIG100J7CSB1W MITSUBISHI | Alldatasheet

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Technical content

MITSUBISHI SEMICONDUCTOR <Intelligent Power Module> MIG100J7CSB1W (600V/100A 7in1) High Power Switching Applications Motor Control Applications

  • Integrates inverter, brake power circuit and control circuits (IGBT drive units, and units for protection against short-circuit current, overcurrent, undervoltage and overtemperature) into a single package.
  • The electrodes are isolated from the case
  • Low thermal resistance
  • V CE (sat) = 1.9 V (typ.)
  • UL recognized: File No.E87989
  • Weight: 278 g (typ.) Equivalent Circuit 16 19 20 W V U B N P FO IN V D GND GND VS OUT FO IN V D GND GND VS OUT FO IN V D GND GND V S OUT FO IN V D GND GND VS OUT GND IN FO V D GND V S OUT GND IN FO V D GND V S OUT GND IN FO V D GND V S OUT 18 17 14 1315 12 11 10 9 8 7 6 5 4 3 2 1

Unit: mm 1 9 . I N ( Z ) 2 0 . G N D ( L )

Unit: mm 1 9 . I N ( Z ) 2 0 . G N D ( L )

Maximum Ratings (Tj = 25°C) Stage Characteristic Condition Symbol Rating Unit Supply voltage P-N Power terminal V CC 450 V Collector-emitter voltage ⎯ V CES 600 V Collector current Tc = 25°C, DC I C 100 A Forward current Tc = 25°C, DC I F 100 A Collector power dissipation Tc = 25°C, DC P C 590 W Inverter Junction temperature ⎯ Tj 150 °C Supply voltage P-N Power terminal V CC 450 V Collector-emitter voltage ⎯ V CES 600 V Collector current Tc = 25°C, DC I C 50 A Reverse voltage ⎯ V R 600 V Forward current Tc = 25°C, DC I F 50 A Collector power dissipation Tc = 25°C, DC P C 340 W Brake Junction temperature ⎯ Tj 150 °C Control supply voltage V D-GND Terminal VD 20 V Input voltage IN-GND Terminal VIN 20 V Fault output voltage FO-GND Terminal VFO 20 V Control Fault output current FO sink current IFO 14 mA Operating temperature ⎯ Tc −20~ + 100 °C Storage temperature Range ⎯ Tstg −40~ + 125 °C Isolation voltage AC 1 min V ISO 2500 V Screw torque (Terminal) M4 ⎯ 2 Module Screw torque (Mounting) M5 ⎯ 3 N･m

Electrical Characteristics

  1. Inverter stage Characteristics Symbol Test Condition Min Typ. Max Unit Tj = 25°C ⎯ ⎯ 1 Collector cut-off current I CEX V CE = 600 V Tj = 125°C ⎯ ⎯ 10 mA Tj = 25°C 1.6 1.9 2.3 Collector-emitter saturation voltage V CE (sat) VD = 15 V IC = 100 A VIN = 15 V → 0 V Tj = 125°C ⎯ 2.1 ⎯ V Forward voltage V F I F = 100 A, Tj = 25°C ⎯ 2.1 2.5 V ton ⎯ 1.3 2.2 tc (on) ⎯ 0.3 ⎯ trr ⎯ 0.2 ⎯ toff ⎯ 1.1 2.1 Switching time tc (off) VCC = 300 V, IC = 100 A VD = 15 V, VIN = 15 V ↔ 0 V Tj = 25°C, Inductive load (Note 1) ⎯ 0.2 ⎯ µs Note 1: Switching time test circuit & timing chart
  1. Brake stage Characteristics Symbol Test Condition Min Typ. Max Unit Tj = 25°C ⎯ ⎯ 1 Collector cut-off current I CEX V CE = 600 V Tj = 125°C ⎯ ⎯ 10 mA Collector-emitter saturation voltage V CE (sat) VD = 15 V IC = 50 A VIN = 15 V → 0 V Tj = 125°C ⎯ 2.0 ⎯ V Tj = 25°C ⎯ ⎯ 1 Reverse current I R V R = 600 V Tj = 125°C ⎯ ⎯ 10 mA Forward voltage V F I F = 50 A, Tj = 25°C 1.5 1.9 2.3 V ton ⎯ 1.3 1.8 tc (on) ⎯ 0.65 ⎯ trr ⎯ 0.8 ⎯ toff ⎯ 1.1 2.1 Switching time tc (off) VCC = 300 V, IC = 50 A VD = 15 V, VIN = 15 V ↔ 0 V Tj = 25°C, Inductive load (Note 1) ⎯ 0.2 ⎯ µs Note 1: Switching time test circuit & timing chart 3. Control stage (Tj = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit High side I D (H) ⎯ 13 17 Control circuit current Low side I D (L) VD = 15 V ⎯ 52 68 mA Input on signal voltage V IN (on) 1.4 1.6 1.8 Input off signal voltage V IN (off) VD = 15 V 2.2 2.5 2.8 V Protection I FO (on) ⎯ 10 12 Fault output current Normal I FO (off) VD = 15 V ⎯ ⎯ 0.1 mA Inverter 160 ⎯ ⎯ Over current protection trip level Brake OC V D = 15 V, Tj <= 125°C 80 ⎯ ⎯ A Inverter 160 ⎯ ⎯ Short circuit protection trip level Brake SC V D = 15 V, Tj <= 125°C 80 ⎯ ⎯ A Over current cut-off time t off (OC) V D = 15 V ⎯ 5 ⎯ µs Trip level OT 110 118 125 Over temperature protection Reset level OTr Case temperature ⎯ 98 ⎯ Trip level UV 11.0 12.0 12.5 Control supply under voltage protection Reset level UVr 12.0 12.5 13.0 V Fault output pulse width t FO V D = 15 V 1 2 3 ms 4. Thermal resistance (Tc = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Inverter IGBT ⎯ ⎯ 0.210 Inverter FRD ⎯ ⎯ 0.313 Brake IGBT ⎯ ⎯ 0.360 Junction to case thermal resistance R th (j-c) Brake FRD ⎯ ⎯ 0.600 °C/W Case to fin thermal resistance R th (c-f) Compound is applied ⎯ 0.017 ⎯ °C/W

Switching Time Test Circuit Timing Chart PG TLP559 (IGM) 15 V 0.1 µF 10 µF 15 kΩ Intelligent power module VD IN GND OUT VS GND U (V, W, B) P VCC 15 V 0.1 µF 10 µF 15 kΩ VD IN GND OUT VS GND IF = 16mA N Input pulse VIN Waveform IC Waveform VCE Waveform 2.5 V 1.6 V 15 V 10% 10% toff tc (off) 10% 10% ton tc (on) 90% Irr trr Irr 20% Irr 90%

  1. Recommended conditions for application Characteristics Symbol Test Condition Min Typ. Max Unit Supply voltage V CC P-N Power terminal ⎯ 300 400 V Control supply voltage V D V D-GND Signal terminal 13.5 15 16.5 V Carrier frequency fc PWM Control ⎯ ⎯ 20 kHz Dead time tdead Switching time test circuit (See page.6) (Note 2) 3 ⎯ ⎯ µ s Note 2: The table lists Dead time requirements for the module input, excluding photocoupler delays. When specifying dead time requirements for the photocoupler input, please add photocoupler delays to the dead time given above. Dead Time Timing Chart tdead 15 V VIN Waveform VIN Waveform 15 V tdead

:Tj = 25°C :Tj = 125°C 200 100 150 0.01 0 20 120 0.1 Tj = 125°C VCC = 300 V VD = 15 V L-Load ton toff tc (on) tc (off) 0.03 0.05 0.3 0.5 40 80 60 100 0.01 0 20 120 0.1 Tj = 25°C VCC = 300 V VD = 15 V L-Load ton toff tc (on) tc (off) 0.03 0.05 0.3 0.5 40 80 60 100 200 0 1 3 4 VD = 17 V Common emitter Tj = 125°C 13 V 15 V 100 150 200 0 1 3 4 VD = 17 V Common emitter Tj = 25°C 13 V 15 V 100 150 Forward current I F (A) Switching time ( µs) Collector-emitter voltage V CE ( V ) IC – VCE Collector current I C (A) Collector-emitter voltage V CE ( V ) IC – VCE Collector current I C (A) Collector current I C (A) Switching time – IC Switching time ( µs) Collector current I C ( A ) Switching time – IC Forward voltage V F (V) IF – VF Forward current I F (A) trr, Irr – IF Peak reverse recovery current Irr (A) Reverse recovery time trr ( ×10ns) 100 0 20 60 120 Common cathode :Tj = 25°C :Tj=125°C Irr trr 40 100

0.001 0.001 0.01 1 0.003 0.1 0.01 0.005 0.03 0.1 0.05 0.3 0.5 Tc = 25°C Diode stage Transistor stage 0.001 0.001 0.01 1 0.003 0.1 0.01 0.005 0.03 0.1 0.05 0.3 0.5 Tc = 25°C Diode stage Transistor stage OC 180 0 200 600 160 140 400 Tj <= 125°C VD = 15 V 100 100 300 700 500 120 100 0 5 15 25 VD = 15 V Tj = 25°C 0 5 15 25 VD = 15 V Tj = 25°C Transient thermal resistance Rth (t) (°C /W) Collector current I C (A) Case temperature T C ( ° C ) OC – TC Over current protection trip level OC (A) Carrier frequency f c (kHz) ID (H) – fc High side control circuit current I D (H) (mA) Carrier frequency f c (kHz) ID (L) – fc Low side control circuit current I D (L) (mA) Collector-emitter voltage V CE ( V ) Reverse bias SOA Pulse width tw (s) Rth (t) – tw Inverter stage Pulse width tw (s) Rth (t) – tw Brake stage Transient thermal resistance Rth (t) (°C /W) 300 0 25 75 150 150 250 50 100 125 100 VD = 15 V Inverter stage Brake stage 200

0.01 0.1 0.3 60 12040 80 VCC = 300 V VD = 15 V L-LOAD : Tj = 25°C : Tj = 125°C 20 100 0.03 0.05 0.5 Turn on loss − IC Turn off loss − IC Collector current I C (A) Collector current I C ( A ) Turn off loss Eoff (mJ) Turn on loss Eon (mJ) 0.01 0.1 0.3 60 120 40 80 VCC = 300 V VD = 15 V L-LOAD : Tj = 25°C : Tj = 125°C 20 100 0.03 0.05 0.5