MIG100J6CSB1W MITSUBISHI | Alldatasheet

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Technical content

MITSUBISHI SEMICONDUCTOR <Intelligent Power Module> MIG100J6CSB1W (600V/100A 6in1) High Power Switching Applications Motor Control Applications

  • Integrates inverter and control circuits (IGBT drive units, and units for protection against short-circuit current, overcurrent, undervoltage and overtemperature) into a single package.
  • The electrodes are isolated from case.
  • Low thermal resistance
  • V CE (sat) = 1.9 V (typ.)
  • UL recognized: File No. E87989 Equivalent Circuit 16 19 20 N P 18 17 14 1315 4 3 2 18 7 6 5 12 11 10 9 GNDIN FO V D VS OUTGND GND IN FO V D VS OUTGND GND IN FO V D VS OUT GND GND IN FO V D VS OUTGND GND IN FO V D VS OUT GND GND IN FO V D VS OUT GND UV W B

Unit: mm 1 9 . I N ( Z ) 2 0 . G N D ( L )

  1. IN (Z) 20. GND (L)

Maximum Ratings (Tj = 25°C) Stage Characteristics Condition Symbol Ratings Unit Supply voltage P-N power terminal V CC 450 V Collector-emitter voltage ⎯ V CES 600 V Collector current Tc = 25°C, DC I C 100 A Forward current Tc = 25°C, DC I F 100 A Collector power dissipation Tc = 25°C, DC P C 590 W Inverter Junction temperature ⎯ T j 150 °C Control supply voltage V D-GND Terminal V D 20 V Input voltage IN-GND Terminal V IN 20 V Fault output voltage FO-GND Terminal V FO 20 V Control Fault output current FO sink current I FO 14 mA Operating temperature ⎯ Tc −20 to +100 °C Storage temperature range ⎯ Tstg −40 to +125 °C Isolation voltage AC 1 min V ISO 2500 V Screw torque (terminal) M4 ⎯ 2 N ･m Module Screw torque (mounting) M5 ⎯ 3 N ･m

Electrical Characteristics

  1. Inverter Stage Characteristics Symbol Test Condition Min Typ. Max Unit Tj = 25°C ⎯ ⎯ 1 Collector cut-off current I CEX V CE = 600 V Tj = 125°C ⎯ ⎯ 10 mA Tj = 25°C 1.6 1.9 2.3 Collector-emitter saturation voltage V CE (sat) VD = 15 V IC = 100 A VIN = 15 V → 0 V Tj = 125°C ⎯ 2.1 ⎯ V Forward voltage V F I F = 100 A, Tj = 25°C ⎯ 2.1 2.5 V ton ⎯ 1.3 2.2 tc (on) ⎯ 0.3 ⎯ trr ⎯ 0.2 ⎯ toff ⎯ 1.1 2.1 Switching time tc (off) VCC = 300 V, IC = 100 A VD = 15 V, VIN = 15 V ↔ 0 V Tj = 25°C, Inductive load (Note 1) ⎯ 0.2 ⎯ µs Note 1: Switching time test circuit and timing chart
  1. Control Stage (Tj = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit High side I D (H) ⎯ 13 17 Control circuit current Low side I D (L) VD = 15 V ⎯ 39 51 mA Input on signal voltage V IN (on) 1.4 1.6 1.8 V Input off signal voltage V IN (off) VD = 15 V 2.2 2.5 2.8 V Protection I FO (on) ⎯ 10 12 Fault output current Normal I FO (off) VD = 15 V ⎯ ⎯ 0.1 mA Over current protection trip level Inverter OC V D = 15 V, Tj <= 125°C 160 ⎯ ⎯ A Short circuit protection trip level Inverter SC V D = 15 V, Tj <= 125°C 160 ⎯ ⎯ A Over current cut-off time t off (OC) V D = 15 V ⎯ 5 ⎯ µs Trip level OT 110 118 125 Over temperature protection Reset level OTr Case temperature ⎯ 98 ⎯ Trip level UV 11.0 12.0 12.5 Control supply under voltage protection Reset level UVr 12.0 12.5 13.0 V Fault output pulse width t FO V D = 15 V 1 2 3 ms 3. Thermal Resistance (Tc = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Inverter IGBT ⎯ ⎯ 0.210 Junction to case thermal resistance R th (j-c) Inverter FRD ⎯ ⎯ 0.313 °C/W Case to fin thermal resistance R th (c-f) Compound is applied ⎯ 0.017 ⎯ °C/W

Switching Time Test Circuit Timing Chart 2.5 V 1.6 V 15 V 10% 10% toff tc (off) 10% 10% ton tc (on) 90% Irr trr Irr 20% Irr Input Pulse VIN Waveform IC Waveform VCE Waveform 90% PG TLP559 (IGM) Intelligent power module VD IN GND OUT VS GND U (V, W) P VCC VD IN GND OUT VS GND IF = 16 mA N 15 V 0.1 µF 10 µF 15 kΩ 15 V 0.1 µF 10 µF 15 kΩ

  1. Recommended conditions for application Characteristics Symbol Test Condition Min Typ. Max Unit Supply voltage VCC P-N Power terminal ⎯ 300 400 V Control supply voltage VD V D-GND Signal terminal 13.5 15 16.5 V Carrier frequency fc PWM Control ⎯ ⎯ 20 kHz Dead time tdead Switching time test circuit (see page.6) (Note 2) 3 ⎯ ⎯ µ s Note 2: The table lists Dead time requirements for the module input, excluding photocoupler delays. When specifying dead time requirements for the photocoupler input, please add photocoupler delays to the dead time given above. Dead Time Timing Chart tdead 15 V VIN Waveform VIN Waveform 15 V tdead

Forward current I F (A) Switching time ( µs) Collector-emitter voltage V CE ( V ) IC – VCE Collector current I C ( A ) Collector-emitter voltage V CE ( V ) IC – VCE Collector current I C ( A ) Collector current I C (A) Switching time – IC Switching time ( µs) Collector current I C (A) Switching time – IC Forward voltage V F (V) IF – VF Forward current I F (A) trr, Irr – IF Peak reverse recovery current I rr (A) Reverse recovery time t rr ( ×10 ns) 0 1 3 2 4 Common cathode :T j = 25°C :T j = 125°C 200 100 150 0.01 0 20 120 0.1 Tj = 125°C VCC = 300 V VD = 15 V L-Load ton toff tc (on) tc (off) 0.03 0.05 0.3 0.5 40 80 60 100 0.01 0 20 120 0.1 Tj = 25°C VCC = 300 V VD = 15 V L-Load ton toff tc (on) tc (off) 0.03 0.05 0.3 0.5 40 80 60 100 200 0 1 3 4 VD = 17 V Common emitter Tj = 125°C 13 V 15 V 100 150 200 0 1 3 4 VD = 17 V Common emitter Tj = 25°C 13 V 15 V 100 150 100 0 20 60 120 Common cathode :T j = 25°C :T j = 125°C Irr trr 40 100

0.001 0.001 0.01 1 0.003 0.1 0.01 0.005 0.03 0.1 0.05 0.3 0.5 Tc = 25°C Diode Transistor Transient thermal resistance R th (t) ( ° C/W) Collector current I C (A) Case temperature T C ( ° C ) OC – TC Over current protection trip level OC (A) Carrier frequency f c (kHz) ID (H) – fc High side control circuit current I D (H) (mA) Carrier frequency f c (kHz) ID (L) – fc Low side control circuit current I D (L) (mA) Collector-emitter voltage V CE ( V ) Reverse bias SOA Pulse width tw (s) Rth (t) – tw Inverter stage OC 180 0 200 600 160 140 400 T j <= 125°C V D = 15 V 100 100 300 700 500 120 0 5 15 25 VD = 15 V Tj = 25°C 300 0 25 75 150 150 250 50 100 125 100 VD = 15 V Inverter stage 200 100 0 5 15 25 VD = 15 V Tj = 25°C

0.01 0.1 0.3 60 12040 80 VCC = 300 V VD = 15 V L-LOAD : Tj = 25°C : Tj = 125°C 20 100 0.03 0.05 0.5 0.01 0.1 0.3 60 120 40 80 VCC = 300 V VD = 15 V L-LOAD : Tj = 25°C : Tj = 125°C 20 100 0.03 0.05 0.5 Turn on loss – IC Turn off loss – IC Collector current I C (A) Collector current I C (A) Turn off loss Eoff (mJ) Turn on loss Eon (mJ)