MGF491XG MITSUBISHI | Alldatasheet

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Technical content

MITSUBISHI SEMICONDUCTOR GaAs FET SUPER LOW NOISE InGaAs HEMT Nov. ´97 Typ MaxMin LimitsParameter Test conditions

DESCRIPTION

The MGF491xG series super-low-noise HEMT(High Electron Mobility Transistor) is designed for use in L to Ku band amplifiers. The hermetically sealed metal-ceramic package assures minimumu parasitic losses, and has a configuration suitable for microstrip circuits. The MGF491*G series is mounted in the super 12 tape.

FEATURES

  • Low noise figure @f=12GHz MGF4916G:NFmin.=0.80dB(MAX.) MGF4919G:NFmin.=0.50dB(MAX.)
  • High associated gain@f=12GHz Gs=12.0dB(MIN.) APPLICATION L to Ku band low noise amplifiers. QUALITY GRADE
  • GG RECOMMENDED BIAS CONDITIONS
  • VDS =2V,ID =10mA
  • Refer to Bias Procedure ABSOLUTE MAXIMUM RATINGS (Ta=25˚C) ELECTRICAL CHARACTERISTICS (Ta=25˚C) Symbol Unit V(BR)GDO IGSS IDSS VGs(off) Saturated drain current OUTLINE DRAWING Unit:millimeters -1.5 V µA mA VGS =-2V,VDS =0V V mS GD-16 Symbol Parameter Ratings 125 VGDO VGSO PT Tch Tstg Unit Gate to drain voltage Gate to source voltage Total power dissipation Channel temperature Storage temperature -65 to +125 V V mW Gate to drain breakdown voltage Gate to source leakage current Gate to source cut-off voltage -0.1 ID Drain current 60 mA NFmin. ø1.8±0.2 0.5±0.15 4.0±0.2 1.85±0.2 0.5±0.15 GATE SOURCE DRAIN gm G S Transconductance Associated gain Minimum noise figure IG =-10µA dB–13.512.0 dB 0.50 dB––MGF4919G VGS =0V,VDS =2V VDS =2V,ID =500µA VDS =2V,ID =10mA VDS =2V,ID =10mA f=12GHz 0.80MGF4916G

MITSUBISHI SEMICONDUCTOR GaAs FET SUPER LOW NOISE InGaAs HEMT Nov. ´97 ID vs. VDS DRAIN TO SOURCE VOLTAGE V DS (V) 0 2 5 Ta=25˚C VGS =-0.1V/STEP TYPICAL CHARACTERISTICS (Ta=25˚C) NF & Gs vs. ID (MGF4919G) DRAIN CURRENT I D (mA) 0 10 0.4 0.8 15 20 0.5 0.6 0.3 0.7 Ta=25˚C VDS =2V f=12GHz ID vs. VGS GATE TO SOURCE VOLTAGE V GS (V) -1.0 -0.5 0 Ta=25˚C VDS =2V 1 3 4 VGS =0V 0.9 G S NF

MITSUBISHI SEMICONDUCTOR GaAs FET SUPER LOW NOISE InGaAs HEMT Nov. ´97 S PARAMETERS (Ta=25˚C,VDS =2V,ID =10mA) Freq. (GHz) S11 S21 S12 S22 K MSG/MAG (dB) 0.990 0.967 0.925 0.874 0.831 0.783 0.743 0.706 0.682 0.670 0.639 0.617 0.591 0.571 0.565 0.560 0.533 0.484 -22.3 -40.6 -53.2 -70.9 -88.8 -105.7 -120.6 -132.1 -144.7 -159.1 -171.8 175.3 163.1 152.9 140.1 125.8 109.8 91.2 5.775 5.585 5.401 5.161 4.899 4.626 4.316 4.100 3.887 3.765 3.617 3.526 3.421 3.349 3.333 3.349 3.356 3.337 158.1 140.6 128.9 111.8 96.8 80.8 67.9 56.4 43.2 30.1 17.5 4.5 -8.1 -17.4 -29.6 -44.4 -59.9 -77.0 0.020 0.035 0.051 0.064 0.075 0.083 0.087 0.090 0.093 0.094 0.095 0.096 0.094 0.094 0.096 0.098 0.101 0.104 71.9 61.8 53.3 42.4 29.3 19.0 9.1 4.1 -6.4 -14.3 -24.4 -33.5 -42.5 -50.9 -61.1 -74.1 -88.8 -105.1 0.533 0.514 0.489 0.457 0.424 0.391 0.369 0.357 0.357 0.351 0.339 0.329 0.328 0.328 0.343 0.351 0.337 0.310 -19.2 -33.4 -42.9 -58.2 -71.6 -87.5 -100.6 -110.8 -122.3 -133.0 -143.5 -154.0 -163.9 -171.3 179.5 170.5 161.8 151.6 0.10 0.19 0.27 0.35 0.43 0.50 0.57 0.64 0.69 0.72 0.80 0.86 0.91 0.95 0.96 0.98 1.01 1.11 28.8 26.5 24.3 21.6 19.8 18.1 16.8 15.9 15.1 14.7 14.0 13.5 13.0 12.7 12.7 12.7 12.5 12.1 Mag. Angle Mag. Angle Mag. Angle Mag. Angle NOISE PARAMETERS (Ta=25˚C,VDS =2V,ID =10mA) Freq. (GHz) Magn. Angle(deg.) MGF4916G MGF4919G Rn (Ω ) Gs (dB) opt NFmin.(dB) 0.76 0.59 0.48 0.41 0.34 139 166 -142 12.5 4.7 2.3 1.8 1.5 0.31 0.47 0.60 069 0.88 0.24 0.35 0.45 0.50 0.61 18.3 15.9 13.5 12.3 9.9