MGF431XG MITSUBISHI | Alldatasheet
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MITSUBISHI SEMICONDUCTOR <GaAs FET> Super Low Noise InGaAs HEMT MITSUBISHI ELECTRIC as of Apr.'98
DESCRIPTION
The MGF431xG series super-low-noise HEMT(High Electron Mobility Transistor) is designed for use in L to K band amplifiers. The hermetically sealed metal-ceramic package assures minimum parasitic losses, and has a configuration suitable for microstrip circuits. ABSOLUTE MAXIMUM RATINGS
ELECTRICAL CHARACTERISTICS
Symbol Parameter Test conditions Min. Typ. Max Unit Gate to Source cut-off voltage VGS =0V, VDS =2V V 50 µA Transconductance V Gs Associated gain 13.5 N Fmin Minimum noise figure Parameter Ratings Unit Gate to drain voltage -4 V -4Gate to source voltage 60Drain current mA Channel temperature -65 ~ +125 °C L to K band low noise amplifiers. APPLICATION gm VGS (off) 0.8 Limits Storage temperature Total power dissipation Symbol VGDO VGSO ID Tch Tstg PT 125 50 mW V ( Ta=25°C ) 6015 OUTLINE DRAWING < Keep safety first in your circuit designs! > Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them.Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i)placement of substitutive, auxiliary circuits, (ii)use of non-flammable material or (iii)prevention against any malfunction or mishap. Gate to source leakage current Saturated drain currentIDSS VGS = -2V, VDS =0V VDS =2V, ID =500µA mA -1.5—-0.1 75 mS—
FEATURES
Low noise figure @ f=12GHz MGF4316G : NF min.=0.80dB (MAX.) MGF4319G : NF min.=0.50dB (MAX.) High associated gain Gs=12.0 dB (MIN.) @ f=12GHz ( Ta=25°C ) IG= -10µA —-3Gate to drain breakdown voltageV(BR)GDO — IGSS VDS =2V, ID =10mA — VDS =2V, ID =10mA, f=12GHz 12 dB—— QUALITY GRADE GG RECOMMENDED BIAS CONDITIONS VDS =2V , ID =10mA Refer to Bias Procedure MGF4316G MGF4319G VDS =2V, ID =10mA, f=12GHz 0.5—— ˚C/W—— 625Rth (ch-a) ΔVf methodThermal resistance *1 *1 : Channel to ambient GD-4
MITSUBISHI SEMICONDUCTOR <GaAs FET> Super Low Noise InGaAs HEMT MITSUBISHI ELECTRIC as of Apr.'98 Typical Characteristics
MITSUBISHI SEMICONDUCTOR <GaAs FET> Super Low Noise InGaAs HEMT MITSUBISHI ELECTRIC as of Apr.'98 f S11 S21 S12 S22 MSG/MAG K (GHz) Magn. Angle Magn. Angle Magn. Angle Magn. Angle (dB) Typical Characteristics S Parameters (Ta=25˚C , VDS =2V , ID =10mA ) Noise Parameters (Ta=25˚C , VDS =2V , ID =10mA ) f (GHz) G opt. Rn (Ω ) NFmin.(dB) Gs (dB)Magn. Angle 4 0.76 49 12.5 0.31 18.3 8 0.59 95 4.7 0.47 15.9 12 0.48 139 2.3 0.60 13.5 14 0.41 166 1.8 0.69 12.3 18 0.34 -142 1.5 0.88 9.9 MGF4316G MGF4319G 0.24 0.35 0.45 0.50 0.61