MGF1801B_1 MITSUBISHI | Alldatasheet

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Technical content

MITSUBISHI SEMICONDUCTOR GaAs FET MICROWAVE POWER GaAs FET 0.5±0.15 Typ Max Min LimitsParameter Test conditions

DESCRIPTION

The MGF1801B, medium-power GaAs FET with an N-channel Schottky gate, is designed for use in S to X band amplifiers and oscillators. The hermetically sealed metalceramic package assures minimum parasitic losses, and has a configuration suitable for microstrip circuits.

FEATURES

  • High output power at 1dB gain compression P1dB=23dBm(TYP.) @f=8GHz
  • High linear power gain G LP=9dB(TYP.) @f=8GHz
  • High reliability and stability APPLICATION S to X band medium-power amplifiers and oscillators. QUALITY GRADE
  • IG RECOMMENDED BIAS CONDITIONS
  • VDS =6V
  • ID =100mA
  • Refer to Bias Procedure ABSOLUTE MAXIMUM RATINGS (Ta=25˚C) ELECTRICAL CHARACTERISTICS (Ta=25˚C) Symbol Unit V(BR)GDO V(BR)GSO Gate to drain breakdown voltage OUTLINE DRAWING Unit:millimeters 250 V V µA mA V GD-10 Symbol Parameter Ratings 175 VGDO VGSO PT Tch Tstg Unit Gate to source voltage Gate to drain voltage Total power dissipation *1 Channel temperature Storage temperature 1.2 -65 to +175 V V W -4.5 200 150 ID Drain current 250 mA GATE SOURCE DRAIN IGSS Gate to source leakage current Thermal resistance *1 -1.5 mS–9070 dB–97 IG =-200µA IG =-200µA VGS =-3V,VDS =0V VDS =6V,ID =100mA,f=8GHz IGR IGF Reverse gate current Forward gate current -0.6 1.5 mA mA *1:TC=25˚C P1dB G LP R th(ch-c) Output power at 1dB gain compression Linear power gain ΔVf method *1:Channel to ambient 4MIN. 4MIN. 0.5±0.15 2.5±0.2 IDSS VGS(off) Saturated drain current Gate source cut-off voltage gm Transconductance VGS =0V,VDS =3V VDS =3V,ID =100µA VDS =3V,ID =100mA Gate to source breakdown voltage VDS =6V,ID =100mA,f=8GHz 21.8 23.0 125 dBm ˚C/W June/2004

MITSUBISHI SEMICONDUCTOR GaAs FET MICROWAVE POWER GaAs FET PO vs. Pin (f=12GHz) INPUT POWER P in(dBm)

30 Gain:10dB

TYPICAL CHARACTERISTICS (Ta=25˚C) ID vs. VDS DRAIN TO SOURCE VOLTAGE V DS (V) 0 2 10 100 200 VGS =-0.5V/step 4 6 8 VGS =0V PO vs. Pin (f=8GHz) INPUT POWER P in(dBm) VDS =6V VDS =4V 0 5 20 25 ID =100mA Gain:10dB PO VDS =6V VDS =4V ID =100mA8 4 2 4 2 June/2004

MITSUBISHI SEMICONDUCTOR GaAs FET MICROWAVE POWER GaAs FET +90˚ -90˚ S21 ,S12 vs. f. S21 S12 S PARAMETERS (Ta=25˚C,VDS =6V,ID =100mA) Freq. (GHz) 0.899 0.874 0.848 0.822 0.796 0.771 0.745 0.719 0.713 0.706 0.700 0.694 0.691 0.689 0.686 0.683 0.677 0.670 0.664 0.657 0.645 0.632 0.620 0.608 -56.8 -69.4 -82.1 -94.7 -107.4 -120.0 -132.7 -145.3 -153.3 -161.3 -169.3 -177.3 176.9 171.1 165.2 159.4 153.1 146.9 140.6 134.3 127.8 121.3 114.8 108.3 6.115 5.682 5.248 4.815 4.382 3.949 3.515 3.082 2.863 2.645 2.426 2.207 2.090 1.973 1.856 1.739 1.671 1.602 1.534 1.466 1.413 1.360 1.308 1.255 140.3 130.4 120.5 110.6 100.6 90.8 80.9 71.0 63.3 55.6 47.9 40.2 33.9 27.5 21.2 14.8 8.5 2.1 -4.3 -10.6 -17.0 -23.4 -29.7 -36.1 0.047 0.049 0.050 0.052 0.054 0.056 0.057 0.059 0.060 0.062 0.063 0.064 0.068 0.073 0.077 0.081 0.089 0.096 0.104 0.111 0.118 0.126 0.133 0.140 52.1 49.3 46.4 43.6 40.8 38.0 35.1 32.3 33.3 34.3 35.2 36.2 37.6 39.0 40.4 41.8 40.5 39.3 38.0 36.7 33.2 29.8 26.3 22.8 0.471 0.462 0.452 0.442 0.432 0.422 0.413 0.403 0.412 0.421 0.431 0.440 0.458 0.476 0.494 0.512 0.530 0.549 0.567 0.585 0.601 0.618 0.635 0.651 -25.2 -32.7 -40.1 -47.5 -54.9 -62.4 -69.8 -77.2 -84.2 -91.1 -98.1 -105.0 -110.3 -115.5 -120.8 -126.0 -130.8 -135.5 -140.3 -145.0 -149.4 -153.9 -158.3 -162.7 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5 9.0 9.5 10.0 10.5 11.0 11.5 12.0 S

11 S21 S12 S22

Ta=25˚C VDS =6V ID =100mA S11 ,S22 vs. f. -j50 -j10 0 25 50 250 +j10 +j25 +j50 -j100 +j100 -j250 +j250 S22 S11 12.0GHz K MSG/MAG (dB) 0.371 0.394 0.431 0.485 0.558 0.657 0.789 0.964 1.006 1.064 1.142 1.245 1.202 1.172 1.153 1.146 1.072 1.011 0.962 0.922 0.893 0.867 0.844 0.823 21.2 20.7 20.2 19.7 19.1 18.5 17.9 17.2 16.3 14.8 13.6 12.4 12.1 11.8 11.5 11.0 11.1 11.6 11.7 11.2 10.8 10.4 9.9 9.5 0.5GHz12.0GHz 0.5GHz -j25 100 3 0.1 0.5GHz 12.0GHz 12.0GHz 0.5GHz 0.2 ±180˚6 I S21 I June/2004

MITSUBISHI SEMICONDUCTOR <GaAs FET> MGF1801B MICROWAVE POWER GaAs FET MITSUBISHI ELECTRIC June/2004