MGF1601B MITSUBISHI | Alldatasheet

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Technical content

MITSUBISHI SEMICONDUCTOR GaAs FET MICROWAVE POWER GaAs FET Nov. ´97 2.5±0.2 0.5±0.15

DESCRIPTION

The MGF1601B, medium-power GaAs FET with an N-channel Schottky gate, is designed for use in S to X band amplifiers and oscillators. The hermetically sealed metalceramic package assures minimum parasitic losses, and has a configuration suitable for microstrip circuits.

FEATURES

  • High output power at 1dB gain compression P1dB=21.8dBm(TYP.) @f=8GHz
  • High linear power gain G LP=8dB(TYP.) @f=8GHz APPLICATION S to X band medium-power amplifiers and oscillators. QUALITY GRADE
  • GG RECOMMENDED BIAS CONDITIONS
  • VDS =6V
  • ID =100mA
  • Refer to Bias Procedure OUTLINE DRAWING Unit:millimeters GD-10 GATE SOURCE DRAIN 4MIN. 4MIN. 0.5±0.15 Typ MaxMin LimitsParameter Test conditions ELECTRICAL CHARACTERISTICS (Ta=25˚C) Symbol Unit V(BR)GDO V(BR)GSO Gate to drain breakdown voltage – 250 V V µA mA V -4.5 200 150 IGSS Gate to source leakage current Thermal resistance *1 -1.5 mS–9070 dB–86 IG =-200µA IG =-200µA VGS =-3V,VDS =0V VDS =6V,ID =100mA,f=8GHz ABSOLUTE MAXIMUM RATINGS (Ta=25˚C) Symbol Parameter Ratings 175 VGDO VGSO PT Tch Tstg Unit Gate to source voltage Gate to drain voltage Total power dissipation *1 Channel temperature Storage temperature 1.2 -65 to +175 V V W ID Drain current 250 mA IGR IGF Reverse gate current Forward gate current -0.6 1.5 mA mA *1:TC=25˚C P1dB G LP R th(ch-c) Output power at 1dB gain compression Linear power gain ΔVf method *1:Channel to ambient IDSS VGS(off) Saturated drain current Gate source cut-off voltage gm Transconductance VGS =0V,VDS =3V VDS =3V,ID =100µA VDS =3V,ID =100mA Gate to source breakdown voltage VDS =6V,ID =100mA,f=8GHz 20.8 21.8 125 dBm ˚C/W

MITSUBISHI SEMICONDUCTOR GaAs FET MICROWAVE POWER GaAs FET Nov. ´97 PO vs. Pin (f=12GHz) INPUT POWER Pin(dBm) PO 0 5 20 25 TYPICAL CHARACTERISTICS (Ta=25˚C) ID vs. VDS DRAIN TO SOURCE VOLTAGE V DS (V) 0 2 10 100 200 VGS =-0.5V/step 4 6 8 VGS =0V PO vs. Pin (f=8GHz) INPUT POWER Pin(dBm) 0 5 20 25 Gain:10dB PO ID =100mA VDS =6V VDS =4V Gain:10dB ID =100mA VDS =6V VDS =4V

MITSUBISHI SEMICONDUCTOR GaAs FET MICROWAVE POWER GaAs FET Nov. ´97 +90˚ -90˚ S21 ,S12 vs. f. 0.2 S21 0.5GHz S12 S PARAMETERS (Ta=25˚C,VDS =6V,ID =100mA) Freq. (GHz) 0.899 0.874 0.848 0.822 0.796 0.771 0.745 0.719 0.713 0.706 0.700 0.694 0.691 0.689 0.686 0.683 0.677 0.670 0.664 0.657 0.645 0.632 0.620 0.608 -56.8 -69.4 -82.1 -94.7 -107.4 -120.0 -132.7 -145.3 -153.3 -161.3 -169.3 -177.3 176.9 171.1 165.2 159.4 153.1 146.9 140.6 134.3 127.8 121.3 114.8 108.3 6.115 5.682 5.248 4.815 4.382 3.949 3.515 3.082 2.863 2.645 2.426 2.207 2.090 1.973 1.856 1.739 1.671 1.602 1.534 1.466 1.413 1.360 1.308 1.255 140.3 130.4 120.5 110.6 100.6 90.8 80.9 71.0 63.3 55.6 47.9 40.2 33.9 27.5 21.2 14.8 8.5 2.1 -4.3 -10.6 -17.0 -23.4 -29.7 -36.1 0.047 0.049 0.050 0.052 0.054 0.056 0.057 0.059 0.060 0.062 0.063 0.064 0.068 0.073 0.077 0.081 0.089 0.096 0.104 0.111 0.118 0.126 0.133 0.140 52.1 49.3 46.4 43.6 40.8 38.0 35.1 32.3 33.3 34.3 35.2 36.2 37.6 39.0 40.4 41.8 40.5 39.3 38.0 36.7 33.2 29.8 26.3 22.8 0.471 0.462 0.452 0.442 0.432 0.422 0.413 0.403 0.412 0.421 0.431 0.440 0.458 0.476 0.494 0.512 0.530 0.549 0.567 0.585 0.601 0.618 0.635 0.651 -25.2 -32.7 -40.1 -47.5 -54.9 -62.4 -69.8 -77.2 -84.2 -91.1 -98.1 -105.0 -110.3 -115.5 -120.8 -126.0 -130.8 -135.5 -140.3 -145.0 -149.4 -153.9 -158.3 -162.7 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5 9.0 9.5 10.0 10.5 11.0 11.5 12.0 S11 S21 S12 S22 Ta=25˚C VDS =6V ID =100mA S11 ,S22 vs. f. -j50 -j10 0 25 50 100 250 +j10 -j25 +j25 +j50 -j100 +j100 -j250 +j250 S22 S11 12.0GHz K MSG/MAG (dB) 0.371 0.394 0.431 0.485 0.558 0.657 0.789 0.964 1.006 1.064 1.142 1.245 1.202 1.172 1.153 1.146 1.072 1.011 0.962 0.922 0.893 0.867 0.844 0.823 21.2 20.7 20.2 19.7 19.1 18.5 17.9 17.2 16.3 14.8 13.6 12.4 12.1 11.8 11.5 11.0 11.1 11.6 11.7 11.2 10.8 10.4 9.9 9.5 0.5GHz12.0GHz 0.5GHz 0.1 12.0GHz 4 0 0.5GHz 12.0GHz ±180˚6 I S 21 I