MGF1403B MITSUBISHI | Alldatasheet

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MITSUBISHI SEMICONDUCTOR <GaAs FET> LOW NOISE GaAs FET

DESCRIPTION

; - OUTLINE DRAWING nit mitimeters tinches) The MGF1403B low-noise GaAs FET with an N-channel ; amin. amin, Schottky gate is designed for use in S to Ku band ampli- aN av.) fiers. The hermetically sealed metal-ceramic package as- o § sures minimum parasitic losses, and has a configuration 2 = se | suitable for microstrip circuits. = 8 He) § FEATURES 3s) | 33 33 © Low noise figure NFmin = 1.8 dB (TYP.) @ f = 12 GHz ts #3) © High associated gain Gs = 10.5 dB (TYP.) @ f = 12 GHz © High reliability and stability @ ® APPLICATION = £0.15 S to Ku band low-noise amplifiers. 2 (0.02 + 0.006) QUALITY GRADE zs ® © 1G, IGX, IGV ~ 1840.2 (0.071 + 0.008 RECOMMENDED BIAS CONDITIONS 3 (0.971 $0-008) © Vos=3V s © 1o=10mA oh © Refer to Bias Procedure 48 rT oF 4! @® GATE 38 ® source 2 @ DRAIN GD-9 ABSOLUTE MAXIMUM RATINGS (ta=es'c) Symbal Parana Rating Unit Veo | Gate w drain votage <6 v Veso Gate to source voltage -6 Px [Totem asiior er [ae | Ton Channel temperature 175 c Tstg Storage temperature =55~ +175 c #1: To=25T ELECTRICAL CHARACTERISTICS (Ta =25'c) sym . est cond mb vam est conditions i Vier)G00 | Gate to drain breakdown voltage | 1g =—100.A. 6 | - | Vionaso [neo sues tnkdown wh] Tg 100.8 =e Gore osouiceoapecwvent | Voa™—3V, Voo=0V _ = [| | Vas(ott) | Gawetosouce cutottwitage | Vpg=3V,Ip=100,A SCS [as [Lv] Gm | Taconductance Vos=3V, t= 10ma | 2 fw | = [es | NF min | Minimum noise figure Vos=3V, Ip=10mA, 1= 12GH2 [| — [1s [2s | ae | "#1; Channel to ambient eee NOV. ' 97 MITSUBISHI ate MISES

MITSUBISHI SEMICONDUCTOR <GaAs FET> LOW NOISE GaAs FET SSMS es ont YPICAL CHARACTERISTICS Ip vs. Ves Ip vs. Vos 50, 50, Tanase —_ Vos=3V Ves=—0.2V/STEP z 40 z 0 i i 2 2 Ves=0V b 30) —_— zg” a | + 3 3 20; o 20) oO —_— = 5 wtftp-an GATE TO SUUHCE VOLTAGE Ves (vi DRAIN TO SOURCE VOLTAGE Vpg (Vv) NF & Gg vs. Ip NF & Gg vs. Ip (f= 4 GHz) (f= 12 GHz) 7 18 7 14 [TT fT Teves LT ET TI Vos=3V dig 6 Gs 12 s| — pana eo: {| }trTTr ey, s 3 1] —— aw 3 a aa n 2 8 ra & eJ4 7,7 TT) es = 7 TTP ys: a4 2 2 w 4 s ei tTtTtTT TT is ¢ LET ERT : 3 3 4 5 > LETTE El: 3 Ce - 4 < 4 ea Ta=2se Ei 4g $ 8 j 3 a a ee < <q CEPT LETT Tt LTT ; : : 0102030 a0 80570 0 i020 3040806070 DRAIN CURRENT Ip (mA) DRAIN CURRENT Ip (mA) NF grin & Gs vs. f 4 16 = Ta=25°C

8 Vos =3V

© 1o=10ma 2 aL | fo AN ie=tom |g e (_LTUUR Fs g z & z ett TI |, 3 c 2 88 s | [TIT | ¢ 3 y & ea a ef | zo4 aa a3 2 {[ TIF y * z = tL TTT | . ° 0 1 2 4 6 8 10 20 FREQUENCY f (GHz) ———). ss NOV.” 97 ara MBS

MITSUBISHI SEMICONDUCTOR <GaAs FET> LOW NOISE GaAs FET —SJ_Ss OOO or rr—nmse Si1, S22 vs. f. S21, Siz vs. f. +80 +90" dS >rN2 18.0GHz A. +i19, * + i250 \\ .— {SS ! 0. 5GHzpy SS

0 C7 25 50 100 Sq +180°4 3 2 1 ry) o

\\ aay a A \\ LS ee 0.5GHz <p i 18.0GHz q7 -id LH Faso og Ng [> Wp, Ef0.198.o0nz SW e-est 2 g Vos=3V ~i28 ~ 100 Ip= 10a 50 arya S PARAMETERS (Ta=25t, Vos=3V, Ip=10mA) Fea [Su Tse se ce Mso/mac cor) | Meo [ame | mao. [ano [ag ana. [ eos [an | (ee) ee SSSSSSSSSSSSSSSSSSSSSSSSSSSSSSSSSSSSSSSSSSSSSSSSSSsssssesee NOV. ' 97

MITSUBISHI SEMICONDUCTOR <GaAs FET> MGF1403B LOW NOISE GaAs FET NOISE PARAMETERS (vos ~3V, !o=10mA) Freq. Topt __ Ra NF min (GHz) Magn. Angle (deg.) (Q) (dB) 0.723 87.3 18.0 on 0.515 “5.6 13.0 LTB Te 179.0 15.0 2.02 Gip and P1dB (ta=25, Vp=3v, ip=10ma) Gip (68) 15.5 . Waa Pree (48m) 11.6 9.8 NOV. ' 97 a SESE ELECTRIC