DATASHEET SEARCH SITE | WWW.ALLDATASHEET.COM
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 4
Technical content
Publication Date : Apr., 2011 < High-power GaAs FET (small signal gain stage) > MGF0921A L & S BAND / 2W SMD non - matched
DESCRIPTION
The MGF0921A GaAs FET with an N-channel schottky Gate, is designed for use UHF band amplifiers.
FEATURES
High output power Po=33dBm(TYP.) @f=1.9GHz,Pin=17dBm High power gain Gp=17dB(TYP.) @f=1.9GHz High power added efficiency add=40%(TYP.) @f=1.9GHz,Pin=17dBm Hermetic Package APPLICATION For UHF Band power amplifiers QUALITY GG RECOMMENDED BIAS CONDITIONS Vds=10V Ids=500mA Rg=200 Delivery -01: Tape & Reel(1K), -03:Trai(50pcs) Absolute maximum ratings (Ta=25C) Symbol Parameter Ratings Unit V GSO Gate to source breakdown voltage -15 V V GDO Gate to drain breakdown voltage -15 V I D Drain current 1800 mA I GR Reverse gate current -5.0 mA I GF Forward gate current 15 mA P T Total power dissipation 10 W T c h Cannel temperature 175 C T s t g Storage temperature -65 to +175 C Electrical characteristics (Ta=25C) Symbol Parameter Test conditions Limits Unit Min. Typ. Max. I DSS Saturated drain current VDS=3V,VGS=0V - 1100 1800 mA V GS(off) Gate to source cut-off voltage VDS=3V,ID=4.0mA -1.0 - -5.0 V gm Transconductance VDS=3V,ID=500mA - 370 - mS Po Output power VDS=10V,ID=500mA,f=1.9GHz 31 33 - dBm add Power added Efficiency Pin=17dBm - 38 - % G LP Linear Power Gain VDS=10V,ID=500mA,f=1.9GHz 15 17 - dB Rth(ch-c) Thermal Resistance *1 Vf Method - 11 15 C/W *1:Channel to case / Above parameters, ratings, limits are subject to change. Fig.1
< High-power GaAs FET (small signal gain stage) > MGF0921A L & S BAND / 2W SMD non - matched Publication Date : Apr., 2011 MGF09121A TYPICAL CHARACTERISTICS
< High-power GaAs FET (small signal gain stage) > MGF0921A L & S BAND / 2W SMD non - matched Publication Date : Apr., 2011 MGF0921A S PARAMETERS (Ta=25C,VD=10V,ID=500mA, Reference Plane see Fig.1)
< High-power GaAs FET (small signal gain stage) > MGF0921A L & S BAND / 2W SMD non - matched Publication Date : Apr., 2011 © 2011 MITSUBISHI ELECTRIC CORPORATION. ALL RIGHTS RESERVED. Keep safety first in your circuit designs! Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is alwa ys the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appr opriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of non-flammable material or (iii) prevention against any malfunction or mishap. Notes regarding these materials
- These materials are intended as a reference to assist our customers in the selection of the Mitsubishi semiconductor product best suited to the customer’s application; they do not convey any license under any intellectual property rights, or any other rights, belonging to Mitsubishi Electric Corporation or a third party.
- Mitsubishi Electric Corporation assumes no res ponsibility for any damage, or infringement of any third-party’s rights, originating in the use of any pr oduct data, diagrams, charts, programs, algorithms, or circuit application examples contained in these materials.
- All information contained in thes e materials, including product data, diagrams, charts, programs and algorithms represents information on products at the time of publication of these materials, and are subject to change by Mitsubishi Electric Corporation without notice due to product improvements or other reasons. It is therefore recommended that cust omers contact Mitsubishi Electric Corporation or an authorized Mitsubishi Semiconductor product distributor for the latest product info rmation before purchasing a product listed herein. The information described here may contain technica l inaccuracies or typographical errors. Mitsubishi Electric Corporation assumes no re sponsibility for any damage, liability, or other loss rising from these inaccuracies or errors. Please also pay attention to info rmation published by Mitsubishi Electr ic Corporation by various means, including the Mitsubishi Semiconductor home page (http://www.MitsubishiElectric.com/).
- When using any or all of the information contained in these materials, including product data, diagrams, charts, programs, and algorithms, please be sure to evaluate all information as a total system before making a final decision on the applicability of the information and products. Mitsubishi Electric Corporation assumes no responsibility for any damage, liability or other loss resulting from the information contained herein.
- Mitsubishi Electric Corporation semiconductors are not designed or m anufactured for use in a device or system that is used under circum stances in which human life is pot entially at stake. Please contact Mitsubishi Electric Corporation or an authorized Mitsubishi Semiconductor product distributor when considering the use of a product contained herein for any specific purposes, such as apparatus or systems for transportation, vehicular, medical, aerospace, nuclear, or undersea repeater use.
- The prior written approval of Mitsubishi Electric Corporation is necessary to reprint or reproduce in whole or in part these materials.
- If these products or technologies ar e subject to the Japanese export cont rol restrictions, they must be exported under a license from the Ja panese government and cannot be im ported into a country other than the approved destination. Any diversion or re-export contrary to the export control laws and regulations of Japan and/or the country of destination is prohibited.
- Please contact Mitsubishi Electric Corporation or an authorized Mitsubishi Semiconductor product distributor for further details on these materials or the products contained therein.