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Publication Date : Apr., 2011 < High-power GaAs FET (small signal gain stage) > MGF0910A L & S BAND / 6W non - matched
DESCRIPTION
The MGF0910A, GaAs FET with an N-channel schottky gate, is designed for use in UHF band amplifiers.
FEATURES
Class A operation High output power P1dB=38.0dBm(TYP .) @f=2.3GHz High power gain GLP=11.0dB(TYP.) @f=2.3GHz High power added efficiency P . A . E = 4 5 % ( T Y P . ) @ f = 2 . 3 G H z , P 1 d B Hermetically sealed metal-ceramic package with ceramic lid APPLICATION For UHF Band power amplifiers QUALITY IG RECOMMENDED BIAS CONDITIONS Vds=10V Ids=1.3A Rg=100 Refer to Bias Procedure Absolute maximum ratings (Ta=25C) Symbol Parameter Ratings Unit V GDO Gate to drain voltage -15 V V GSO Gate to source voltage -15 V I D Drain current 5 A I GR Reverse gate current -15 mA I GF Forward gate current 31.5 mA P T*1 Total power dissipation 27.3 W T c h Cannel temperature 175 C T s t g Storage temperature -65 to +175 C *1:Tc=25C Electrical characteristics (Ta=25C) Symbol Parameter Test conditions Limits Unit Min. Typ. Max. IDSS Saturated drain current VDS=3V,VGS=0V - - 5 A gm Transconductance VDS=3V,ID=1.3A - 1.5 - S VGS(off) Gate to source cut-off voltage VDS=3V,ID=10mA -2 - -5 V P1dB Output power at 1dB gain compression 37 38 - dBm GLP Linear Power Gain 10 11 - dB P.A.E. Power added efficiency VDS=10V,ID(RF off)=1.3A f=2.3GHz - 45 - % Rth(ch-c) *2 Thermal resistance ΔVf method - - 5.5 C/W *2 :Channel-case
< High-power GaAs FET (small signal gain stage) > MGF0910A L & S BAND / 6W non - matched Publication Date : Apr., 2011 MGF0910A TYPICAL CHARACTERISTICS( Ta=25deg.C ) ID vs. VGS ID vs. VDS Po, PAE vs. Pin (f=2.3GHz) GLP, P1dB, ID, PAE vs. VDS (f=2.3GHz)
< High-power GaAs FET (small signal gain stage) > MGF0910A L & S BAND / 6W non - matched Publication Date : Apr., 2011 MGF0910A S-parameters( Ta=25deg.C , VDS=10(V),IDS=1.3(A) ) S11,S22 vs. f S21,S12 vs. f
< High-power GaAs FET (small signal gain stage) > MGF0910A L & S BAND / 6W non - matched Publication Date : Apr., 2011 © 2011 MITSUBISHI ELECTRIC CORPORATION. ALL RIGHTS RESERVED. Keep safety first in your circuit designs! Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is alwa ys the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appr opriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of non-flammable material or (iii) prevention against any malfunction or mishap. Notes regarding these materials
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