MGF0906B MITSUBISHI | Alldatasheet
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Technical content
MITSUBISHI SEMICONDUCTOR <GaAs FET> L, S BAND POWER GaAs FET
DESCRIPTION
The MGFO906B, GaAs FET with an N-channel schottky OUTLINE DRAWING Units niimeters gate, is designed for use in UHF band amplifiers. us FEATURES ® © Class A operation z 71.0 @ High output power Fs Tee Pigp=37dBm (TYP) @2.3GHz “ ya x @ High power gain 3 SS 2-R1.25 Gip=11dB (TYP) @2.3GHz z C == S © High power added efficiency 2 ® nadd=40% (TYP) @2.3GHz, Prop © Hermetically sealed metal-ceramic package with ceramic lid APPLICATION 94 UHF band power amplifiers 7 7 x als QUALITY GRADE Si5) elG 2 RECOMMENDED BIAS CONDITIONS 10.0 © Vos=10V . af care © Rg= : @ SOURCE (FLANGE) © Refer to Bias Procedure GF-21 onan ABSOLUTE MAXIMUM RATINGS (ta=25'c) ec [ior [Reem erecren |e a | #1: To 225°C ELECTRICAL CHARACTERISTICS (ta=e5'c) Setwrated dan curent Vos =v, Vas =0V | - fe [30 | | Gup Linear power gain. 10 dB 1 Drain current Vos=10V, lp =1.2A, f=2.3GHz _ [as | ry Nada Power added efficiency at Pigg ~ % Themolveasunce +1 [AVI mehod Lo oes Per] 7: Channel to case NOV." 97 MITSUBISHI ate MES!
MITSUBISHI SEMICONDUCTOR <GaAs FET> L, S BAND POWER GaAs FET a SsSSeSessesesesssssssssssFsFFsMsMshsmm eee Oe ee TYPICAL CHARACTERISTICS Ib vs. Ves Ip vs. Vos 3 3 = ly i Ta=250 s J | Es 2n8 oa 2 oa ? ——— 7 | FRED {1 | Zoe —3 -2 —1 0 0 1 2 3 4 s 6 GATE TO SOURCE VOLTAGE Ves (V) DRAIN TO SOURCE VOLTAGE Vos (V) Po & 7add vs. Pin Gir, Pras. Ib and "ad vs. Vos (f=2.3GHz) (f=2.3GHz) «fF Yoo = t0v Gp= 11109 68 = "f w=re0 'o= 1-20 . Son Sur = = S10 oe a Po 3 Cg e > q & is _ Pics é 8 Z 4 5 so é zg 40 9 2 3 nad po 8 Tadd 20 na = 40) 2d 8 : — 20 30 ° 6 @ 70 INPUT POWER Pin (dBm) Vos (V) NOV." 97
9 MITSUBISHI
MITSUBISHI SEMICONDUCTOR <GaAs FET> L, S BAND POWER GaAs FET $$$ um S11, S22 vs. f S21, Si2 vs. f +150 +30" ~~ 0 ScHo | +125, >t i100 Ne 3.0GHe o _— <LYy +n p3.0cHz F250 4 0.5GH2K LS o| See +180 0 ce NS] ane L|\\ j10) PA fe = i> {0.05 b 0.5GHz ot. N ~ 25 poe . Ta=25°C —150 Toe"! Vos=10V lo= 1.24 . S PARAMETERS (ta=2st, vos=10v, lo=1.2) K —_]a SSS NOV. ' 97