MGF0805A MITSUBISHI | Alldatasheet

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MITSUBISHI SEMICONDUCTOR <GaAs FET> MGF0805A L & S Band GaAs FET [ SMD non-matched ] Mitsubishi Electric Sept. / 20091

DESCRIPTION

The MGF0805A, GaAs FET with an N-channel schottky Gate, is designed for MMDS/UMTS/WiMAX applications.

FEATURES

  • High output power : Po = 36.5 dBm (typ.)
  • High power added efficiency : ηadd = 50 % (typ.)
  • Hermetic package
  • Designed for use in Class AB linear amplifiers

APPLICATIONS

  • L/S band power amplifiers QUALITY
  • GG RECOMMENDED BIAS CONDITIONS
  • Vds = 10 V • Ids = 400 mA • Rg = 100 Ω Packaging Tape & Reel (1000 pcs) °C- 55 to +150Storage temperatureTstg °C175Channel temperatureTch mA21Forward gate currentIGF mA-1 0Reverse gate currentIGR W21Total power dissipationPT A2.5Drain currentID V-5Gate to Source Voltage VGS V15Drain to Source VoltageVDS UnitRatingsParameterSymbol Absolute maximum ratings (Ta = 25° C) °C/W75–∆Vf MethodThermal resistance *1Rth(ch-c) dB–14.513.0VDS=10V, IDQ=400mA, f=1.9GHzLinear power gainGLP %–50–Power added efficiencyηadd dBm–36.535.0VDS = 10 V, IDQ = 400 mA, f = 1.9 GHz, Pin = 22 dBm Output powerPo mS–1000–VDS = 10 V, IDS = 400 mATransconductancegm V-2 . 0-1 . 1-0 . 5VDS = 3 V, IDS = 10 mAGate to source cut-off voltageVGS(off) mA–1800–VDS = 3 V, VGS = 0 VSaturated drain currentIDSS Max.Typ.Min. Unit Limits Test conditionsParameterSymbol Electrical characteristics ( Ta = 25° C) *1 : Channel to case Specifications are subject to change without notice. 4.2 mm 4.0 mm Package Outline (GF-50 Style) Gate Mark Round Corner

MITSUBISHI SEMICONDUCTOR <GaAs FET> MGF0805A L & S Band GaAs FET [ SMD non-matched ] Mitsubishi Electric Sept. / 20092 Outline Drawing (1) Gate (2) Drain (3) Source unit: mm BACK SIDE PATTERN 4.00 0.80 1.15 0.30 4.20 Reference Plane Reference Plane Gate Mark Round Corner (1) (2) 1.20 2.80 0.80 0.80 2.00 4.00 3.80 Gate Mark (1) (2) (3)

MITSUBISHI SEMICONDUCTOR <GaAs FET> MGF0805A L & S Band GaAs FET [ SMD non-matched ] Mitsubishi Electric Sept. / 20093 Freq. (GHz) (mag) (ang) (mag) (ang) (mag) (ang) (mag) (ang) S11 S21 S12 S22 S-parameters: Condition: VD = 10 V, ID = 400 mA, Ta = 25 deg. C Note : Reference plane is shown in Outline Drawing

MITSUBISHI SEMICONDUCTOR <GaAs FET> MGF0805A L & S Band GaAs FET [ SMD non-matched ] Mitsubishi Electric Sept. / 20094 Example of Circuit Schematic and Characteristics : f = 2.6 GHz -70 -60 -50 -40 -30 -20 -10 15 20 25 30 35 Pout (dBm) ACP (dBc) 100 200 300 400 500 600 700 ID (mA) ACP NACP ID Bias condition: V D = 10 V, IDQ = 400 mA, Modulation signal: 3GPP TEST MODEL 1 ( W-CDMA ) 5 1 01 52 02 5 Pin (dBm) Gain (dB) Pout (dBm) PAE ( % ) Pout Gain PAE

MITSUBISHI SEMICONDUCTOR <GaAs FET> MGF0805A L & S Band GaAs FET [ SMD non-matched ] Mitsubishi Electric Sept. / 20095 ID EVM 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 15 20 25 30 35 Pout (dBm ) EVM (%) 100 200 300 400 500 600 700 ID (mA ] Bias condition: VD = 10 V, IDQ = 400 mA Modulation signal: IEEE.802.16 WiMAX A, Downlink, 64QAM3/4 Example of Circuit Schematic and Characteristics : f = 2.6 GHz OutputInput 1pF Z23 Z24 1.5pF1.5pF MGF0805A +VD-VG 51 Ω1000pF 20pF20pF 20pF20pF Z21 Z22 Z25Z11Z12Z13Z14 Z15 Z26 4.7uF 100 Ω 2pF 2pF Z11 to Z26 : Microstrip line ( L × W, Unit: mm ) PCB : BT Resin, εr = 3.4, Substrate thickness = 0.4 mm

MITSUBISHI SEMICONDUCTOR <GaAs FET> MGF0805A L & S Band GaAs FET [ SMD non-matched ] Mitsubishi Electric Sept. / 20096 OutputInput 47uF Z27Z15 Z14 Z13 Z12 Z11 Z25Z22Z21 20pF 20pF100 Ω 21nH 2pF 20pF 20pF 1000pF 51 Ω -VG +VD MGF0805A 3pF 2pF3pF Z24Z23 1pF Z26 1000pF Z11 to Z27 : Microstrip line ( L × W, Unit: mm ) PCB : BT Resin, εr = 3.4, Substrate thickness = 0.4 mm Bias condition: VD = 10 V, IDQ = 400 mA, Modulation signal: 3GPP TEST MODEL 1 ( W-CDMA ) 51 0 1 5 2 0 2 5 Pin (dBm) Gain (dB) Pout (dBm) PAE ( % ) Pout Gain PAE 51 0 1 5 2 0 2 5 Pin (dBm) Gain (dB) Pout (dBm) PAE ( % ) Pout Gain PAE Example of Circuit Schematic and Characteristics : f = 1.9 GHz -70 -60 -50 -40 -30 -20 -10 15 20 25 30 35 Pout (dBm) ACP (dBc) 100 200 300 400 500 600 700 ID (mA) ACP NACP ID -70 -60 -50 -40 -30 -20 -10 15 20 25 30 35 Pout (dBm) ACP (dBc) 100 200 300 400 500 600 700 ID (mA) ACP NACP ID

MITSUBISHI SEMICONDUCTOR <GaAs FET> MGF0805A L & S Band GaAs FET [ SMD non-matched ] Mitsubishi Electric Sept. / 20097 Bias condition: VD = 10 V, IDQ = 400 mA, Modulation signal: 3GPP TEST MODEL 1 ( W-CDMA ) 10 15 20 25 30 Pin (dBm) Gain (dB) Pout (dBm) PAE ( % ) Pout Gain PAE 10 15 20 25 30 Pin (dBm) Gain (dB) Pout (dBm) PAE ( % ) Pout Gain PAE -70 -60 -50 -40 -30 -20 -10 15 20 25 30 35 Pout (dBm) 100 200 300 400 500 600 700 ACP (dBc) ID (mA) ACP NACP ID -70 -60 -50 -40 -30 -20 -10 15 20 25 30 35 Pout (dBm) 100 200 300 400 500 600 700 ACP (dBc) ID (mA) ACP NACP ID Example of Circuit Schematic and Characteristics : f = 3.5 GHz Z11 to Z26 : Microstrip line ( L × W, Unit: mm ) PCB : BT Resin, εr = 3.4, Substrate thickness = 0.4 mm 0.5pF1pF 100 Ω 47uF Z26Z16 Z15 Z14 Z13 Z12 Z11 Z25Z22Z21 20pF 20pF 0.5pF 20pF 20pF 1000pF 51 Ω -VG +VD MGF0805A 1pF 1.5pF Z24Z23 0.5pF Input Output

MITSUBISHI SEMICONDUCTOR <GaAs FET> MGF0805A L & S Band GaAs FET [ SMD non-matched ] Mitsubishi Electric Sept. / 20098 Requests Regarding Safety Designs Mitsubishi Electric constantly strives to raise the level of its quality and reliability. Despite these concerted efforts, however, there will be occasions when our semiconductor products suffer breakdowns, malfunctions or other problems. In view of this reality, it is requested that every feasible precaution be taken in the pursuit of redundancy design, malfunction prevention design and other safety-related designs, to prevent breakdowns or malfunctions in our products from resulting in accidents involving people, fires, social losses or other problems, thereby upholding the highest levels of safety in the products when in use by customers. Matters of Importance when Using these Materials 1. These materials are designed as reference materials to ensure that all customers purchase Mitsubishi Electric semiconductors best suited to their specific use applications. Please be aware, however, that the technical information contained in these materials does not comprise consent for the execution or use of intellectual property rights or other rights owned by Mitsubishi Electric Corporation. 2. Mitsubishi Electric does not assume responsibility for damages resulting from the use of product data, graphs, charts, programs, algorithms or other applied circuit examples described in these materials, or for the infringement of the rights of third-party owners resulting from such use. 3. The data, graphs, charts, programs, algorithms and all other information described in these materials were current at the issue of these materials, with Mitsubishi Electric reserving the right to make any necessary updates or changes in the products or specifications in these materials without prior notice. Before purchasing Mitsubishi Electric semiconductor products, therefore, please obtain the latest available information from Mitsubishi Electric directly or an authorized dealer. 4. Every possible effort has been made to ensure that the information described in these materials is fully accurate. However, Mitsubishi Electric assumes no responsibility for damages resulting from inaccuracies occurring within these materials. 5. When using the product data, technical contents indicated on the graphs, charts, programs or algorithms described in these materials, assessments should not be limited to only the technical contents, programs and algorithm units. Rather, it is requested that ample evaluations be made of each individual system as a whole, with the customer assuming full responsibility for decisions on the propriety of application. Mitsubishi Electric does not accept responsibility for the propriety of application. 6. The products described in these materials, with the exception of special mention concerning use and reliability, have been designed and manufactured with the purpose of use in general electronic machinery. Accordingly these products have not been designed and manufactured with the purpose of application in machinery or systems that will be used under conditions that can affect human life, or in machinery or systems used in social infrastructure that demand a particularly high degree of reliability. When considering the use of the products described in these materials in transportation machinery (automobiles, trains, vessels), for objectives related to medical treatment, aerospace, nuclear power control, submarine repeaters or systems or other specialized applications, please consult with Mitsubishi Electric directly or an authorized dealer. 7. When considering use of products for purposes other than the specific applications described in these materials, please inquire at Mitsubishi Electric or an authorized dealer. 8. The prior consent of Mitsubishi Electric in writing is required for any reprinting or reproduction of these materials. 9. Please direct any inquiries regarding further details of these materials, or any other comments or matters of attention, to Mitsubishi Electric or an authorized dealer.